铋基氧化物复合薄膜的制备与铁电光伏性能的研究

发布时间：2018-04-18 03:21

本文选题：复合薄膜 + 铁电性　；参考：《内蒙古大学》2017年硕士论文

【摘要】：进入新世纪以来,多铁材料获得了飞速发展,在新型信息存储器、传感器和光电材料等多个领域有着极佳的应用前景。铋基氧化物BiFeO_3作为多铁材料的代表之一,理论上存在较高的光电转换效率和反常的光伏效应,使其成为材料界的研究热点。然而,由于BiFeO_3材料自身存在成膜质量差、漏电流大、光电转换效率低等一些缺点,其铁电性能和光伏性能还有待于提高。本文使用形成复合薄膜材料的方法,成功的制备了 BiFeO_3/BiVO_4复合薄膜,对其微观结构、铁电特性以及光伏特性等一系列性能进行了表征。结果发现,BiFeO_3/BiVO_4复合薄膜形成了结晶程度良好的多晶薄膜,具有良好的漏电特性和介电特性。同时光学特性得到了很好的改善,其光伏效应能够在一个较宽波长范围内得到,并且光伏的谱响应向着可见光区域发生了明显的红移现象。本文通过引入LaNiO_3缓冲层的方法,在Si(100)基片上成功的制备了 LaNiO_3作为底电极的BiFeO_3薄膜,随后深入的分析和讨论LaNiO_3缓冲层的引入对BiFeO_3薄膜结构以及性能所产生的影响。研究结果发现,使用LaNiO_3氧化物作为底电极,实现了铁电薄膜的择优生长,大大减少了漏电流,进而提升了铁电薄膜的铁电性能。
[Abstract]:Since the beginning of the new century, multi-iron materials have been rapidly developed, and have a good application prospect in many fields, such as new information memory, sensors and optoelectronic materials.Bismuth based oxide (BiFeO_3), as one of the representative of multi-iron materials, has high photoelectric conversion efficiency and abnormal photovoltaic effect in theory, which makes it a research hotspot in material field.However, the ferroelectric properties and photovoltaic properties of BiFeO_3 materials need to be improved due to their poor film forming quality, large leakage current and low photoelectric conversion efficiency.In this paper, BiFeO_3/BiVO_4 composite films were successfully prepared by the method of forming composite thin films. The microstructure, ferroelectric properties and photovoltaic properties of BiFeO_3/BiVO_4 composite films were characterized.The results show that BiFeO _ 3 / BiVOS _ 4 composite thin films form polycrystalline films with good crystallinity and good leakage and dielectric properties.At the same time, the optical properties are improved very well, the photovoltaic effect can be obtained in a wide wavelength range, and the spectral response of the photovoltaic is redshift to the visible region.In this paper, the BiFeO_3 thin films with LaNiO_3 as the bottom electrode were successfully prepared on the Si-100 substrate by introducing the LaNiO_3 buffer layer. The effect of the LaNiO_3 buffer layer on the structure and properties of the BiFeO_3 thin films was analyzed and discussed in detail.The results show that the preferential growth of ferroelectric thin films is realized by using LaNiO_3 oxide as the bottom electrode, and the leakage current is greatly reduced, and the ferroelectric properties of the ferroelectric thin films are improved.
【学位授予单位】：内蒙古大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O484

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