Fe基高频软磁薄膜的制备及微波特性研究

发布时间：2018-04-19 01:15

本文选题：脉冲激光沉积法 + 高频软磁薄膜　；参考：《青岛大学》2017年硕士论文

【摘要】：随着电子信息技术向高集成化、小型化、薄膜化及高频化方向发展,越来越多的元件要求集成在更小的基片上。为了减小电子系统的整体尺寸和重量,发展薄膜器件无疑成为满足要求的实用方法。微波软磁薄膜具有良好的磁性能,如高的饱和磁化强度4πMs,高的磁导率μ和低的阻尼常数α。因此,由软磁薄膜组成的电感器其电感将显著增强,并且在单片微波集成电路中所需空间大大地减少。但是,外加磁场通常具有大的重量或高的功率消耗,这在集成电路中很难满足小型化,轻量化和低功耗的性能要求。因此,具有磁各向异性的金属软磁薄膜吸引了越来越多的关注。软磁薄膜的铁磁共振频率fFMR主要是由其饱和磁化强度4πMs和面内单轴各向异性场H_K决定的。各向异性场H_K作为外禀参量对制备条件、缺陷等比较敏感,可以更容易的提高1-2个数量级,所以软磁薄膜的研究主要集中在提高其单轴各向异性场方面。本论文围绕着集成电路(IC)兼容性工艺条件下,磁各向异性软磁薄膜的制备和微波软磁特性提高等内容,开展了以下主要研究工作:(1)条纹阵列结构的磁各向异性。利用脉冲激光沉积法结合光刻工艺,制备了Ni_(80)Fe_(20)连续膜和条纹膜,研究了条纹长度均为5 mm,条纹宽度分别为20μm、30μm及40μm对于Ni_(80)Fe_(20)薄膜的微结构和单轴各向异性的影响。经分析测试发现:连续膜表现出各向同性,其铁磁共振频率fFMR为1.71 GHz,而条纹膜表现出各向异性,且条纹膜的各向异性场H_K随着条纹宽度的减小逐渐增大,当条纹宽度减小至20μm时,条纹膜的铁磁共振频率fFMR增大到2.1 GHz。所有样品的铁磁共振频率fFMR和各向异性场H_K的比较表明了铁磁共振频率的增大归因于Ni_(80)Fe_(20)条纹膜的形状各向异性的增加。(2)应力诱导磁各向异性。利用脉冲激光沉积法,制备了膜厚为65 nm的一系列Fe56CO24B20非晶薄膜,通过弯曲Si衬底引入压应力,探究了压应力对薄膜的畴结构及单轴各向异性的影响。经分析测试发现:易磁化轴垂直于压应力的方向;随着压应力的增大,单轴磁各向异性场H_K从54 Oe增大到191 Oe,铁磁共振频率相应地从3.41 GHz增大到4.03 GHz。随后利用磁力显微镜(MFM)测试发现具有压应力的薄膜其条纹畴结构及条纹的称度随压应力的增加逐渐增强。进一步的分析表明,应力沉积薄膜的方法不仅可以提高软磁薄膜的铁磁共振频率,还可以降低磁损耗。
[Abstract]:With the development of electronic information technology towards high integration, miniaturization, thin-film and high frequency, more and more components are required to be integrated on smaller substrates.In order to reduce the overall size and weight of the electronic system, the development of thin film devices is undoubtedly a practical method to meet the requirements.Microwave soft magnetic thin films have good magnetic properties, such as high saturation magnetization 4 蟺 Ms, high permeability 渭 and low damping constant 伪.Therefore, the inductance of inductors made up of soft magnetic thin films will be greatly enhanced, and the space required in monolithic microwave integrated circuits will be greatly reduced.However, the applied magnetic field usually has large weight or high power consumption, which is difficult to meet the performance requirements of miniaturization, lightweight and low power consumption in integrated circuits.Therefore, metal soft magnetic thin films with magnetic anisotropy have attracted more and more attention.The ferromagnetic resonance frequency (fFMR) of soft magnetic thin films is mainly determined by the saturation magnetization of 4 蟺 Ms and the in-plane uniaxial anisotropic field HK.As an intrinsic parameter, the anisotropic field HK is more sensitive to the preparation conditions, defects and so on, and can easily increase 1-2 orders of magnitude, so the study of soft magnetic thin films is mainly focused on improving its uniaxial anisotropic field.This thesis focuses on the preparation of magnetically anisotropic soft magnetic thin films and the improvement of microwave soft magnetic properties under the condition of IC / IC compatibility. The main research work of this thesis is as follows: 1) the magnetic anisotropy of the striped array structure.By using pulsed laser deposition and photolithography, the nippon 80 FeSP-20) continuous film and stripe film were prepared. The effects of stripe length of 5 mm, stripe width of 20 渭 m ~ 30 渭 m and stripe width of 40 渭 m on the microstructure and uniaxial anisotropy of NiSZ _ (80) / S _ (FeX) _ (20) thin films were investigated.It is found that the continuous film shows isotropy, its ferromagnetic resonance frequency (fFMR) is 1.71GHz, and the stripe film exhibits anisotropy, and the anisotropic field HK of the stripe film increases with the decrease of stripe width.When the fringe width is reduced to 20 渭 m, the FMR frequency fFMR of the striped film increases to 2.1 GHz.The comparison of ferromagnetic resonance frequency (fFMR) and anisotropic field HK of all samples shows that the increase of ferromagnetic resonance frequency is attributed to the increase in the shape anisotropy of NiSZ _ (80) Fetig _ (20)) stripe films.A series of Fe56CO24B20 amorphous films with a thickness of 65 nm were prepared by pulsed laser deposition. The influence of compressive stress on the domain structure and uniaxial anisotropy of the films was investigated by introducing compressive stress into the curved Si substrate.It is found that the easy magnetization axis is perpendicular to the compressive stress direction, and with the increase of the compressive stress, the uniaxial magnetic anisotropy field HK increases from 54 Oe to 191 Oe, and the ferromagnetic resonance frequency increases from 3.41 GHz to 4.03 GHz correspondingly.Then the magnetic force microscope (MFM) test showed that the stripe domain structure and the symmetry of the stripe increased with the increase of the compressive stress in the thin films with compressive stress.Further analysis shows that the stress deposition method can not only increase the ferromagnetic resonance frequency of the soft magnetic thin film, but also reduce the magnetic loss.
【学位授予单位】：青岛大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O482.54;O484

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