硫化温度对ZnS薄膜生长质量的影响

发布时间：2018-05-11 18:39

  本文选题：硫化锌薄膜 + 磁控溅射　； 参考：《原子核物理评论》2017年03期

【摘要】：采用热反应法对玻璃衬底上以磁控溅射制备的Zn薄膜进行硫化,制备出Zn S薄膜。薄膜的微观结构、物相结构和表面形貌分别采用正电子湮没技术(PAT)、X射线衍射仪(XRD)、扫描电子显微镜(SEM)进行分析和表征。利用慢正电子湮没多普勒展宽对四个不同硫化温度下得到的ZnS薄膜样品中膜层结构缺陷进行研究,测量了薄膜中的空位型微观缺陷的相对浓度,指出445℃硫化样品中正电子注入能量在1.5～4.5 keV后S参数最小,说明该硫化温度下反应生成的ZnS薄膜结构缺陷浓度最小,膜的致密度最高。XRD结果显示薄膜在445℃以上硫化后,呈(111)择优生长趋势。从扫描电镜的结果也可以看出,在445℃硫化后,薄膜的晶粒明显地变得更大、更致密,这是因为ZnS晶胞比Zn晶胞大以及硫化过程中ZnS固相再结晶的缘故。
[Abstract]:Zn thin films prepared by magnetron sputtering on glass substrates were vulcanized by thermal reaction method and ZnS thin films were prepared. The microstructure, phase structure and surface morphology of the films were characterized by positron annihilation technique and scanning electron microscopy (SEM). By using slow positron annihilation Doppler broadening, the structure defects of ZnS films obtained at four different curing temperatures were studied. The relative concentrations of the vacancy microdefects in the films were measured. It is pointed out that the S parameter is the smallest after the positron injection energy is 1.5 ~ 4.5 keV, which indicates that the ZnS film produced by the reaction at the vulcanization temperature has the lowest structural defect concentration and the highest density. The results show that the film is vulcanized above 445 鈩，

本文编号：1875110