垂直光磁记录薄膜的制备与测试方法研究

发布时间：2018-05-24 18:13

  本文选题：TbFeCo + Co_2FeAl_(0.5)Si_(0.5)　； 参考：《华侨大学》2016年硕士论文

【摘要】：本文采用磁控溅射法制备生长了具有良好垂直磁各向异性(PMA)的TbFeCo非晶薄膜和Si/Ta/Pd/CFAS/MgO/Pd结构的磁性多层膜,并研究了溅射工艺和膜层结构设计与所制备PMA的关系。首先,搭建了一套可同时测量垂直磁化薄膜的磁光、磁电功能特性的磁光电一体化测试系统。其次,利用磁控溅射技术,采用FeCo靶和Tb片组合的复合镶嵌靶制备了具有PMA的TbFeCo薄膜。经过实验分析后发现,低的工作气压能够在更小的溅射功率下制备得到具有较高PMA的TbFeCo薄膜;当TbFeCo薄膜的膜厚在一定的范围内逐渐增大时,TbFeCo薄膜的剩磁比不断变大而其矫顽力不断减小;在一定的复合靶的组合形式下只通过改变溅射功率制备出了富Tb和富FeCo两种类型的TbFeCo薄膜,随着溅射功率的增大薄膜由富FeCo状态转变成富Tb状态,由此可以看出采用复合靶形式,溅射功率对沉积薄膜的成分有较明显的影响。最后,采用磁控溅射的技术制备了具有PMA的Si/Ta/Pd/CFAS/MgO/Pd多层膜,研究了Pd缓冲层厚度、CFAS磁性层的厚度以及退火温度与薄膜PMA的关系。发现在Ta层和磁性层之间插入一定厚度Pd缓冲层是该结构的薄膜获得PMA的必要条件;在其它各层厚度固定的情况下,制备了一系列不同磁性层厚度的薄膜样品,经300℃真空退火30min后,磁性层厚度在2.6nm-4.3nm范围内的薄膜具有良好PMA;对磁性层厚度为3.8nm的样品进行不同温度的真空退火处理,发现薄膜先由面内磁各向异性转变为PMA,然后随着温度继续升高薄膜的PMA慢慢变差到最后PMA完全被破坏;制备了磁性层厚度为20nm的薄膜,研究了不同退火温度对其面内磁各向异性的影响,实验结果表明,退火温度的不断增加,薄膜面内磁特性由单轴磁各向异性慢慢的转变为磁各向同性,同时薄膜易磁化轴方向的矫顽力逐渐变大。
[Abstract]:In this paper, the magnetron sputtering method was used to prepare magnetic multilayer films with good vertical magnetic anisotropy (PMA) TbFeCo amorphous film and Si/Ta/Pd/CFAS/MgO/Pd structure. The relationship between the sputtering process and the structure design of the film and the preparation of the PMA was studied. Second, using the magnetron sputtering technique, the TbFeCo thin film with PMA is prepared by the composite mosaic target of FeCo target and Tb piece. After the experiment, it is found that the low working pressure can be prepared with a higher PMA TbFeCo film under the smaller sputtering power; when the film thickness of the TbFeCo film is in the thin film, the film thickness of the TbFeCo film is in the thin film. When a certain range increases, the remanence ratio of TbFeCo film increases and the coercivity decreases continuously. Under the combination of a certain composite target, only two types of TbFeCo rich Tb and rich FeCo films have been prepared by changing the sputtering power. With the increase of sputtering power, the thin film is transformed from FeCo rich to rich Tb state. It is found that the sputtering power has a significant influence on the composition of the deposited film. Finally, the Si/Ta/Pd/CFAS/MgO/Pd multilayer films with PMA are prepared by magnetron sputtering. The thickness of the Pd buffer layer, the thickness of the CFAS magnetic layer and the relationship between the annealing temperature and the thin film PMA are studied. It is found that the Ta layer and the magnetic layer are inserted between the magnetic layer and the magnetic layer. A certain thickness of Pd buffer layer is a necessary condition for the film of this structure to obtain PMA. Under the condition of fixed thickness of other layers, a series of thin film samples with different thickness of magnetic layer are prepared. After vacuum annealing at 300 C for 30min, the film with the thickness of the magnetic layer in the 2.6nm-4.3nm range has a good PMA; the sample with the thickness of the magnetic layer is 3.8nm. In the vacuum annealing treatment at different temperatures, it is found that the magnetic anisotropy in the film is changed to PMA in the first surface, and then the PMA of the film is gradually reduced to the final PMA as the temperature continues to rise. The film thickness of the magnetic layer is 20nm, and the effect of the different annealing temperature on the magnetic anisotropy in the surface is studied. The experimental results show that the film is retreated. The magnetic properties in the film surface gradually change from uniaxial anisotropy to magnetic isotropy, and the coercive force in the direction of the magnetization axis of the thin film gradually becomes larger.
【学位授予单位】：华侨大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：O484.1
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本文编号：1930059