掺铝氧化锌薄膜的制备及其光电性能研究

发布时间：2018-05-30 12:40

  本文选题：超声喷雾热解法 + ZnO薄膜　； 参考：《辽宁师范大学》2014年硕士论文

【摘要】：氧化锌近年来备受关注,它是被发现的新一代的紫外激发发射以及发射激光器件。随着半导体器件在世界上的不断发展,两个至关重要的问题也相应出现,就是P型掺杂问题和带隙工程问题。Zn0激活层是双重异质结的光激发材料,与其有关的P型掺杂及p-n结器件最近这些年的研究已经有了很大进步。近期研究的重点是p-Zn0导电、Zn0基的p-n结合衬底。 制备铝掺杂氧化锌的方法大致为：磁控溅射法、分子束外延法、化学气相沉积法(CVD)、有机金属化学气相沉积法(MOCVD)、溶胶-凝胶法以及喷雾热解法等,超声喷雾热解法设备相对比较简单,前驱体溶液制备更加方便,参数比较易于调节,具备容易实现大面积镀膜和方便进行大规模工业化生产等优点。 醋酸锌水溶液作为本次实验的前驱体溶液,并以硝酸铝为Al源,利用超声喷雾热解法系统在石英衬底和硅片衬底上制备了纯Zn0薄膜和铝掺杂氧化锌薄膜。采用XRD(x射线衍射仪)、SEM(扫描电子显微镜)、PL(光致发光光谱)、紫外-可见光光谱仪和霍耳测试仪等测试方法,对氧化锌薄膜与铝掺杂氧化锌的结构和光电性能进行了测试,并根据测试结果对于在各种生长条件下,比如改变衬底温度、前驱物溶液浓度、沉积时间和退火条件等实验参数对Zn0薄膜结构和性能的影响进行了研究。 实验结果显示超声喷雾热解法制备的铝掺杂氧化锌薄膜具有较好的光电性能。由PL谱可知以硅片为衬底的薄膜具有很强的近带紫外发光峰。XRD测得数据显示以石英为衬底的薄膜有着明显的C轴择优取向。在不同温度与不同浓度条件下制备的掺铝氧化锌薄膜,体现出最佳温度是470度,nZn：nA,=1：0.04时为最佳浓度。通过霍尔测试结果得出,nZn:nAl=1:0.04时和衬底温度为480度时样品呈现p型导电性。
[Abstract]:Zinc oxide has attracted much attention in recent years. It is a new generation of UV excited emission and laser emission devices. With the continuous development of semiconductor devices in the world, two important problems have emerged: P-type doping problem and bandgap engineering problem. Zn0 activation layer is a photoexcited material with double heterojunction. In recent years, great progress has been made in the study of P-doped and p-n junction devices. Recent studies have focused on the p-n bonding substrates of p-Zn0 conducting Zn0 substrates. The methods of preparing aluminum doped zinc oxide are magnetron sputtering, molecular beam epitaxy, chemical vapor deposition, organic metal chemical vapor deposition, sol-gel method and spray pyrolysis, etc. The equipment of ultrasonic spray pyrolysis is relatively simple, the preparation of precursor solution is more convenient, the parameters are easy to adjust, and it is easy to realize large area coating and to carry out large-scale industrial production. Pure Zn0 thin films and Al-doped zinc oxide thin films were prepared on quartz and silicon substrates by ultrasonic spray pyrolysis system with aluminum nitrate as Al source and zinc acetate aqueous solution as the precursor solution in this experiment. The structure and optoelectronic properties of zinc oxide films doped with aluminum were measured by means of XRD(x ray diffractometer (XRD(x) and scanning electron microscopy (SEM), such as photoluminescence spectroscopy, UV-Vis spectrometer and Hall tester. The effects of various growth conditions, such as substrate temperature, concentration of precursor solution, deposition time and annealing conditions, on the structure and properties of Zn0 films were investigated. The experimental results show that aluminum doped zinc oxide films prepared by ultrasonic spray pyrolysis have good photoelectric properties. The PL spectra show that the thin films on silicon substrates have strong near-band ultraviolet luminescence peak. XRD data show that the films on quartz substrates have obvious C-axis preferred orientation. Under different temperature and different concentration, the optimum temperature is 470 掳n Zn: nA1: 0.04 as the optimum concentration of aluminum doped zinc oxide thin film. The results of Hall test show that the sample exhibits p-type conductivity at 1: 0.04 and 480 鈩，

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