ZnSe薄膜的制备及性能表征

发布时间：2018-06-09 17:44

  本文选题：透红外材料 + 薄膜电池　； 参考：《长春理工大学》2014年硕士论文

【摘要】：ZnSe理化性质决定了其在半导体领域的广泛应用,而将ZnSe制备成薄膜应用在透红外材料,太阳能薄膜电池上是本研究的重点,要求制备出的ZnSe薄膜均匀,努力使Zn/Se达到1：1,红外透过的比率达到较高水平,各种性质稳定。ZnSe薄膜的制备有很多种手段,如MBE、CVD、PLD等,本实验采用电化学沉积方法(ECD),恒电流条件下,在基质上沉积出ZnSe薄膜,探究分别改变电沉积液锌离子和硒酸根离子浓度比pH,转速等对ZnSe沉积的影响。研究表明,在Zn+/SeO32(?)浓度比为100：1,电流密度0.0004A/dm2,温度为45℃,pH=3,转速为800r/min,沉积时间2h时所制备的薄膜沉积层效果最好。
[Abstract]:ZnSe is widely used in semiconductor field due to its physical and chemical properties. ZnSe thin film is used in infrared transmission material. Solar thin film cell is the focus of this study, and the ZnSe thin film is required to be uniform. We try to make ZnSe reach 1: 1, the infrared transmittance ratio reaches a higher level, and there are many methods for the preparation of stable ZnSe thin films, such as MBE / CVDX PLD, etc. In this experiment, ZnSe thin films were deposited on the substrate at constant current by electrochemical deposition method. The effects of the concentration ratio of zinc ion and selenate ion on the deposition of ZnSe were studied. The study shows that in Zn / Seo _ 32) When the concentration ratio is 100: 1, the current density is 0.0004A / dm2, the temperature is 45 鈩，

本文编号：2000580