磁过滤真空阴极电弧技术弧电流对四面体非晶碳薄膜性能的影响

发布时间：2018-06-15 19:57

本文选题：弧电流 + Ta-C薄膜　；参考：《真空科学与技术学报》2017年12期

【摘要】：研究了磁过滤阴极真空电弧技术中不同弧电流(20~100 A),制备的四面体非晶碳薄膜性能的影响。通过对薄膜厚度、薄膜硬度、表面形貌以及sp3键含量随弧电流的变化结果进行了测试。结果表明,当弧电流从20增大至100 A,表征薄膜sp杂化碳含量的ID/IG从0.212增加到1.18,显示制备薄膜的sp3键含量逐渐减少,同时sp2键在逐渐增加。随着弧电流值上升,薄膜硬度增加,表明其值与弧电流值呈正相关性,高的弧电流使通过磁过滤器的大颗粒等离子体数增加,从而薄膜表面形貌易于沉积大颗粒,导致薄膜表面质量下降。因此,选择合适的弧电流值可优化Ta-C薄膜制备工艺,本文研究内容为工业应用中通过弧电流调整优化膜层综合性能提供参考。
[Abstract]:The effect of different arc currents on the properties of tetrahedral amorphous carbon films prepared by magnetically filtered cathode vacuum arc technique was studied. The changes of thickness, hardness, surface morphology and sp3 bond content with arc current were measured. The results show that when the arc current increases from 20 to 100A, the ID- / IG, which characterizes the carbon content of sp hybrid, increases from 0.212 to 1.18, which shows that the sp3 bond content of the prepared films decreases and the sp2 bond increases gradually. With the increase of arc current value, the hardness of the film increases, which indicates that its value is positively correlated with the arc current value, and the high arc current increases the number of plasma particles passing through the magnetic filter, thus the surface morphology of the film is easy to deposit large particles. The surface quality of the film decreases. Therefore, the preparation process of Ta-C thin films can be optimized by choosing the appropriate arc current value. This paper provides a reference for optimizing the comprehensive properties of Ta-C films by arc current adjustment in industrial applications.
【作者单位】：合肥工业大学机械工程学院;合肥工业大学汽车与交通工程学院;
【分类号】：TB383.2

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