溅射气压对碳硅氧薄膜透过率及光学带隙的影响

发布时间：2018-06-16 11:22

本文选题：碳硅氧薄膜 + 磁控溅射　；参考：《人工晶体学报》2017年08期

【摘要】：采用射频磁控溅射技术在玻璃基底和单晶硅片(100)上制备了碳硅氧(Si OC)薄膜,通过扫描电镜、X射线衍射、拉曼光谱、X射线光电子能谱及紫外可见透射光谱等技术手段对其进行了分析,研究了在不同溅射气压下所制备薄膜的组分、透过率及光学带隙。结果表明:随着溅射气压的增大,薄膜内部sp~3键含量、透过率及光学带隙均随之增大,sp~3键及其形成的宽带隙σ键对薄膜光学带隙有着较大影响。在溅射气压为3.0 Pa的条件下,薄膜光学带隙为2.67 e V。
[Abstract]:Carbon silicon oxide (sic) thin films were prepared on glass substrates and single crystal silicon substrates by RF magnetron sputtering technique. The films were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Raman spectra, X-ray photoelectron spectroscopy (XPS) and UV-Vis transmission spectroscopy were used to study the composition, transmittance and optical band gap of the films prepared at different sputtering pressures. The results show that with the increase of sputtering pressure, the content of sp~3 bond, the transmittance and the optical band gap increase with the increase of sputtering pressure. At the sputtering pressure of 3.0 Pa, the optical band gap of the film is 2.67 EV.
【作者单位】：海南大学材料与化工学院;南海海洋资源利用国家重点实验室;海南省特种玻璃重点实验室;海南中航特玻科技有限公司;
【基金】：国家自然科学基金(51562008) 国家重点研发计划项目(2016YFC0700804) 海南省重点研发计划项目(ZDYF2016017)
【分类号】：TB383.2

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