紫外激光辐照对非晶IZO薄膜电学性质影响

发布时间：2018-06-27 07:08

  本文选题：透明导电薄膜 + 溶胶凝胶法　； 参考：《中国科技论文》2016年17期

【摘要】：为了降低溶胶凝胶法制备透明导电薄膜的热退火温度,将溶胶-凝胶法与深紫外激光处理相结合,在石英玻璃衬底上制备了非晶铟锌氧(InZnO、IZO)透明导电薄膜。通过X射线衍射、紫外-可见光吸收光谱、霍尔效应测试以及红外光谱等测试手段,分析了激光辐照前后,薄膜的微观结构、光电性质以及材料中有机物共价键的变化情况。结果表明:248nm深紫外激光辐照并未改变薄膜的非晶结构,但薄膜的电学性能得到明显的提升,这归因于高能光子能有效去除因低温退火而残留在薄膜中的有机成分,并降低薄膜表面吸附氧的浓度,从而提高薄膜中载流子浓度和迁移率;最后,在250℃的退火温度下得到了光电性能良好的非晶IZO透明导电薄膜(电阻率为2.01×10~(-2)Ω·cm,在550nm处透过率为92.7%)。
[Abstract]:In order to reduce the thermal annealing temperature of transparent conductive thin films prepared by sol-gel method, amorphous indium zinc oxide (InZnOZO) transparent conductive thin films were prepared on quartz glass substrates by combining sol-gel method with deep ultraviolet laser treatment. By means of X-ray diffraction, UV-Vis absorption spectrum, Hall effect measurement and infrared spectroscopy, the microstructure, photoelectric properties and covalent bonds of organic compounds in the films were analyzed before and after laser irradiation. The results show that the amorphous structure of the films has not been changed by the irradiation of w 248nm deep ultraviolet laser, but the electrical properties of the films have been obviously improved, which is attributed to the high energy photons being able to effectively remove the organic components remaining in the films due to low temperature annealing. At the annealing temperature of 250 鈩，

本文编号：2073102