金属薄膜传感器中氮化硅薄膜的制备及工艺试验研究

发布时间：2018-07-07 07:51

  本文选题：氮化硅 + 不锈钢　； 参考：《中北大学》2017年硕士论文

【摘要】：在金属薄膜传感器中,常采用介质层薄膜使金属基底与敏感元件之间绝缘,保护敏感元件不受外界环境污染以确保测量过程中的精确稳定性。氮化硅因其具有高的抗拉强度、硬度及比电阻,较高的介电常数和优良的绝缘性等机械、电学性能而在微机械与微电子领域和材料改性领域备受关注。国内外对氮化硅薄膜的制备工艺及结构等均有大量研究,但是有关沉积参数对沉积速率、薄膜均匀度、薄膜粗糙度的影响和沉积参数与退火热处理对薄膜结构的影响等方面的系统研究尚有不足,并且针对氮化硅薄膜在金属基底上的制备的研究少之又少。本文结合金属基底探究氮化硅薄膜的制备工艺,为以后金属薄膜传感器的制备奠定了坚实的工艺基础,具有重要的现实意义。以不锈钢作为基底材料,采用射频磁控反应溅射法,分别基于单晶硅靶材和氮化硅靶材沉积出用于金属薄膜传感器绝缘层和保护层的氮化硅薄膜,采用多种测量设备对所制备样品的薄膜厚度、表面粗糙度、表面形貌、组成成分、晶体结构和薄膜硬度等进行分析检测。基于单晶硅靶材设计单因素试验法探究了溅射功率、工作压强、气体流量比和基底温度对沉积速率、表面均匀度和表面粗糙度三个薄膜质量特性的影响规律;基于氮化硅靶材探究了溅射功率、工作压强、氮气流量对薄膜质量特性的影响规律;重点针对单晶硅靶材制备薄膜时的沉积参数设计正交试验,通过极差和方差分析,研究得出了四个沉积参数对薄膜质量特性的影响程度和显著性结果,并通过正交试验获得的测量值,分别建立了沉积速率、薄膜均匀度和表面粗糙度三个经验模型公式。研究结果表明,对不同沉积参数条件下的薄膜进行表面形貌变化的分析,得出溅射功率在100W~120W范围内表面缺陷较少、质量最好,基底温度在200℃左右时薄膜质量平整致密,薄膜硬度为1532.6HV;随着氮气流量的增大薄膜的硬度先升高再降低,氮气流量在15sccm时硬度最大是1240.3HV;通过XRD图谱和EDS电子能谱分析得知,制备的薄膜为非晶结构的富硅氮化硅,而当退火温度不高于1000℃时,晶体结构几乎不发生变化。
[Abstract]:In the metal thin film sensor, the dielectric film is often used to insulate the metal substrate from the sensitive element, to protect the sensitive element from the environmental pollution and to ensure the accurate stability of the measurement process. Silicon nitride has attracted much attention in the field of micromechanics and microelectronics and material modification because of its high tensile strength, hardness and specific resistance, high dielectric constant and excellent electrical properties. The preparation process and structure of silicon nitride films have been studied extensively at home and abroad, but the deposition parameters are related to deposition rate, film uniformity, and so on. The influence of film roughness and the effect of deposition parameters and annealing heat treatment on the structure of the films are still insufficient, and the preparation of silicon nitride thin films on metal substrates is rare. In this paper, the preparation process of silicon nitride thin film is studied based on metal substrate, which lays a solid technological foundation for the preparation of metal film sensor in the future, and has important practical significance. Using stainless steel as substrate, silicon nitride films were deposited on the basis of monocrystalline silicon targets and silicon nitride targets by radio frequency magnetron reactive sputtering, respectively. The film thickness, surface roughness, surface morphology, composition, crystal structure and film hardness of the samples were analyzed and measured by various measuring devices. The effects of sputtering power, working pressure, gas flow ratio and substrate temperature on the deposition rate, surface uniformity and surface roughness of monocrystalline silicon target were investigated. Based on silicon nitride target, the effects of sputtering power, working pressure and nitrogen flow rate on the film quality were investigated, and the orthogonal test was designed for the deposition parameters of monocrystalline silicon target, and the analysis of range and variance was used to study the effect of sputtering power, working pressure and nitrogen flow rate on the film quality. The influence and significance of four deposition parameters on the film quality characteristics were obtained. Three empirical models of deposition rate, film uniformity and surface roughness were established through the measured values obtained by orthogonal test. The results show that the surface morphology of the films with different deposition parameters is analyzed. The results show that the surface defects are less and the quality is the best in the sputtering power range of 100W ~ 120W, and the film mass is flat and compact at the substrate temperature of about 200 鈩，

本文编号：2104302