溶剂蒸汽辅助旋涂法制备高性能聚己基噻吩薄膜
发布时间：2018-07-17 17:42
【摘要】：本文是基于聚己基噻吩(P3HT)薄膜为研究对象,通过控制薄膜制备时溶剂的挥发速度来调控其微结构及其薄膜晶体管的性能。 第一部分我们使用不同浓度的氯仿溶液通过旋涂法制备了P3HT薄膜。一维面外掠入射X射线表征的结果说明面外方向(100)衍射峰的强度会随着所用溶液的浓度下降而增高,而比较(010)衍射峰的变化趋势,正好相反。我们进而观察二维掠入射X射线衍射,其结果表明这是由于低浓度溶液制备的薄膜中分子链从face-on取向为主转变为edge-on取向为主。通过测量薄膜晶体管器件性能,可以证明edge-on取向对应着更高的载流子迁移率。这与采用高沸点溶剂制备的样品得到的结果类似。 第二部分我们采用了溶剂辅助旋涂法这一新方法制备样品,它的本质也是通过抑制溶剂挥发来调控薄膜微结构。我们使用氯苯溶剂制备了三组不同条件的样品,分别是正常旋涂的、经过120min熏蒸后处理的和采用溶剂蒸汽辅助旋涂法制备的样品。经过一维面外掠入射X射线表征发现经过熏蒸后处理与溶剂辅助旋涂法制备的样品的吸收峰强度相近,都高于正常旋涂制备的薄膜吸收强度。相应的薄膜晶体管器件迁移率采用溶剂辅助旋涂法制备的器件迁移率为0.041cm2/vs,而正常条件制备的器件迁移率为0.007cm2/vs。通过对结晶性和器件迁移率进行的比较,这种新型的溶剂蒸汽辅助旋涂法相当于正常旋涂和后续熏蒸处理两个过程,这种方法可能会在实际生产过程中节省更多的时间,生产程序也更加简单,所以这种新型的溶剂蒸汽辅助旋涂法应该值得广泛的关注。
[Abstract]:Based on the study of polyhexylthiophene (P3HT) thin films, the microstructure and the properties of the thin film transistors are regulated by controlling the volatile rate of the solvent during the preparation of the films. In the first part, P3 HT films were prepared by spin coating with different concentrations of chloroform solution. The results of one-dimensional out-of-plane grazing incidence X-ray show that the intensity of the (100) diffraction peak in the out-of-plane direction increases with the decrease of the concentration of the solution used, but the change trend of the (010) diffraction peak is just the opposite. We then observed two-dimensional grazing incident X-ray diffraction. The results show that the molecular chain in the thin films prepared in low concentration solution changed from face-on orientation to edge-on orientation. By measuring the performance of thin film transistor devices, it is proved that the edge-on orientation corresponds to higher carrier mobility. The results are similar to those obtained from the samples prepared with high boiling point solvents. In the second part, we adopt a new solvent-assisted spin-coating method to prepare the samples. The essence of the method is to regulate the microstructure of the films by inhibiting solvent volatilization. Three groups of samples with different conditions were prepared by using chlorobenzene solvent. The samples were prepared by 120min fumigation and solvent vapor assisted spin-coating. It is found that the absorption peak intensity of the samples prepared by fumigation and solvent-assisted spin-coating is similar and higher than that of the films prepared by normal spin-coating. The mobility of the thin film transistor devices prepared by solvent-assisted spin-coating method is 0.041 cm ~ 2 / V _ s, while that of the devices prepared under normal conditions is 0.007 cm ~ 2 / vs. By comparing crystallization and device mobility, this new solvent-steam assisted spin-coating process is equivalent to two processes, normal spin-coating and subsequent fumigation, which may save more time in actual production. The production process is also simpler, so this new solvent vapor-assisted spin-coating method deserves extensive attention.
【学位授予单位】：长春工业大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TQ317;TB383.2
本文编号：2130440
[Abstract]:Based on the study of polyhexylthiophene (P3HT) thin films, the microstructure and the properties of the thin film transistors are regulated by controlling the volatile rate of the solvent during the preparation of the films. In the first part, P3 HT films were prepared by spin coating with different concentrations of chloroform solution. The results of one-dimensional out-of-plane grazing incidence X-ray show that the intensity of the (100) diffraction peak in the out-of-plane direction increases with the decrease of the concentration of the solution used, but the change trend of the (010) diffraction peak is just the opposite. We then observed two-dimensional grazing incident X-ray diffraction. The results show that the molecular chain in the thin films prepared in low concentration solution changed from face-on orientation to edge-on orientation. By measuring the performance of thin film transistor devices, it is proved that the edge-on orientation corresponds to higher carrier mobility. The results are similar to those obtained from the samples prepared with high boiling point solvents. In the second part, we adopt a new solvent-assisted spin-coating method to prepare the samples. The essence of the method is to regulate the microstructure of the films by inhibiting solvent volatilization. Three groups of samples with different conditions were prepared by using chlorobenzene solvent. The samples were prepared by 120min fumigation and solvent vapor assisted spin-coating. It is found that the absorption peak intensity of the samples prepared by fumigation and solvent-assisted spin-coating is similar and higher than that of the films prepared by normal spin-coating. The mobility of the thin film transistor devices prepared by solvent-assisted spin-coating method is 0.041 cm ~ 2 / V _ s, while that of the devices prepared under normal conditions is 0.007 cm ~ 2 / vs. By comparing crystallization and device mobility, this new solvent-steam assisted spin-coating process is equivalent to two processes, normal spin-coating and subsequent fumigation, which may save more time in actual production. The production process is also simpler, so this new solvent vapor-assisted spin-coating method deserves extensive attention.
【学位授予单位】：长春工业大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TQ317;TB383.2
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