射频输入功率对DLC∶F∶Si薄膜结构和附着特性的调制机理
发布时间：2018-07-26 16:18
【摘要】：以SiC陶瓷靶为靶材,Ar和CHF_3为源气体,采用反应磁控溅射法在双面抛光的316L不锈钢基片上制备出了系列Si和F共掺杂的DLC∶F∶Si薄膜。研究了射频输入功率对薄膜的附着力、硬度和表面接触角的影响。结果表明,选取适当的输入功率(180W左右)可以制备出附着力达11N的DLC∶F∶Si薄膜。通过拉曼和红外光谱分析以及样品粗糙度分析,作者提出了输入功率对DLC∶F∶Si薄膜结构和特性调制的机理,即输入功率直接影响SiC靶的溅射产额、空间Ar~+的能量以及CHF_3的分解程度,继而影响空间Si、C、-CF、-CF_2,特别是F~*等基团的能量和浓度,调制薄膜中F含量以及Si-C键含量和C网络的关联度。Si-C、C=C键的增加有助于薄膜附着力的明显改善,F含量的减少则会导致薄膜的疏水性能有所下降。
[Abstract]:A series of Si and F co-doped DLC:F:Si films were prepared on a double-side polished 316L stainless steel substrate by reactive magnetron sputtering using SiC ceramic target as targets, ar and CHF_3 as source gases. The influence of RF input power on adhesion, hardness and surface contact angle was studied. The results show that DLC:F:Si films with adhesion up to 11 N can be prepared with proper input power (about 180W). Based on Raman and infrared spectroscopy and sample roughness analysis, the author proposed the modulation mechanism of input power on the structure and characteristics of DLC:F:Si film, that is, the input power directly affects the sputtering yield of SiC target. The energy of the space Ar~ and the degree of decomposition of CHF_3, in turn, affect the energy and concentration of the space Si-C ~ (-CFN) -CFS _ (2), especially the groups such as FG *, and so on. The increase of F content and Si-C bond content in the modulation film and the correlation degree of C network. The increase of C bond can improve the adhesion of the film obviously. The decrease of F content will lead to the decrease of the hydrophobicity of the film.
【作者单位】： 苏州大学物理与光电能源学部;
【基金】：国家自然基金资助项目(11275136)
【分类号】：TB383.2
本文编号：2146568
[Abstract]:A series of Si and F co-doped DLC:F:Si films were prepared on a double-side polished 316L stainless steel substrate by reactive magnetron sputtering using SiC ceramic target as targets, ar and CHF_3 as source gases. The influence of RF input power on adhesion, hardness and surface contact angle was studied. The results show that DLC:F:Si films with adhesion up to 11 N can be prepared with proper input power (about 180W). Based on Raman and infrared spectroscopy and sample roughness analysis, the author proposed the modulation mechanism of input power on the structure and characteristics of DLC:F:Si film, that is, the input power directly affects the sputtering yield of SiC target. The energy of the space Ar~ and the degree of decomposition of CHF_3, in turn, affect the energy and concentration of the space Si-C ~ (-CFN) -CFS _ (2), especially the groups such as FG *, and so on. The increase of F content and Si-C bond content in the modulation film and the correlation degree of C network. The increase of C bond can improve the adhesion of the film obviously. The decrease of F content will lead to the decrease of the hydrophobicity of the film.
【作者单位】： 苏州大学物理与光电能源学部;
【基金】：国家自然基金资助项目(11275136)
【分类号】：TB383.2
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