反应性半导体桥含能复合薄膜的制备及其特性研究
发布时间：2018-09-11 07:03
【摘要】：本文研究了Al/Ni和Al/Co3O4两种含能复合薄膜的制备方法和化学反应特性,研究了集成两种含能复合薄膜的反应性半导体桥的能量转换特性和规律,取得了重要的研究成果。 (1)通过制备工艺的研究,掌握了C0304纳米棒的氨气挥发诱导制备方法、Al/Ni和Al/Co3O4含能复合薄膜的磁控溅射制备方法,以及Al/Ni-SCB和Al/Co3O4-SCB两种反应性半导体桥的集成制备方法。 (2)通过FESEM、EDS、XRD、FTIR和DSC等多种手段的分析研究,获得了Al/Ni和Al/Co3O4含能复合薄膜的形貌结构、组成成分和热反应性能特征及规律。制备出的Al/Ni复合薄膜表面均匀致密,无尖锐峰,层状结构分明,组成成分分别为Al、Ni单质；Al、Ni单层厚度分别为45nm、30nm时,放热量为1134.64J/g,达到了理论值的82.2%。制备出的纳米棒为C0304,呈中空倒锥形状,整齐致密地生长于Si基片上,直径-400nm,溅射沉积的Al紧密地排列在C0304纳米棒上,形成了具有核-壳结构的Al/Co3O4含能薄膜；当沉积A1厚度为5μm时,Al/Co3O4具有较大的放热量,达到2254.6J/g, Al/Co3O4起始反应温度(580℃)较低,具有较高的反应活性。 (3)通过电容放电方式的发火性能研究,掌握了Al/Ni-SCB和Al/Co3O4-SCB的发火特性和规律。充电电容为47μF时,Al/Ni-SCB随着充电电压的增加,爆发时间变小,能量利用率变小,临界发火能量几乎保持恒定。Al/Ni-SCB最大火焰高度达9mm,产生的高温火焰亮度和火花量相比裸桥SCB明显增加,Al/Ni复合薄膜的存在使得半导体桥输出能量倍增,提高了Al/Ni-SCB的点火能力；充电电容为47μF时,在较低电压(低于40V)的情况下,Al/Co3O4-SCB不能爆发,随着充电电压的增加,爆发时间变小,能量利用率变小,临界发火能量几乎都集中在8.75mJ-9.10mJ之间。
[Abstract]:In this paper, the preparation methods and chemical reaction characteristics of two kinds of energetic composite films, Al/Ni and Al/Co3O4, are studied, and the energy conversion characteristics and laws of reactive semiconductor bridges integrated with two kinds of energetic composite films are studied. Important research results have been obtained. (1) through the study of preparation technology, we have mastered the preparation method of ammonia volatilization induction of C0304 nanorods. The magnetron sputtering method of Al / Ni and Al/Co3O4 energetic composite films has been obtained. And the integrated preparation of Al/Ni-SCB and Al/Co3O4-SCB reactive semiconductor bridges. (2) the morphology, composition, thermal reaction properties and characteristics of Al/Ni and Al/Co3O4 energetic composite films were obtained by means of FESEM,EDS,XRD,FTIR and DSC. The surface of the Al/Ni composite film is uniform and compact, without sharp peak, with distinct layered structure. When the composition of the monolayer of Al,Ni is 45 nm, the heat release is 1134.64 J / g, which reaches the theoretical value of 82.2. The prepared nanorods are C0304, with hollow inverted cone shape, neatly and compactly grown on Si substrates with diameters of -400nmm. Al deposited by sputtering are arranged closely on C0304 nanorods to form core-shell structure Al/Co3O4 energetic films. When the thickness of deposition A1 is 5 渭 m, Al / Co _ 3O _ 4 has large heat release, reaching 2254.6 J / g, and the initial reaction temperature of Al/Co3O4 is lower (580 鈩，
本文编号：2235957
[Abstract]:In this paper, the preparation methods and chemical reaction characteristics of two kinds of energetic composite films, Al/Ni and Al/Co3O4, are studied, and the energy conversion characteristics and laws of reactive semiconductor bridges integrated with two kinds of energetic composite films are studied. Important research results have been obtained. (1) through the study of preparation technology, we have mastered the preparation method of ammonia volatilization induction of C0304 nanorods. The magnetron sputtering method of Al / Ni and Al/Co3O4 energetic composite films has been obtained. And the integrated preparation of Al/Ni-SCB and Al/Co3O4-SCB reactive semiconductor bridges. (2) the morphology, composition, thermal reaction properties and characteristics of Al/Ni and Al/Co3O4 energetic composite films were obtained by means of FESEM,EDS,XRD,FTIR and DSC. The surface of the Al/Ni composite film is uniform and compact, without sharp peak, with distinct layered structure. When the composition of the monolayer of Al,Ni is 45 nm, the heat release is 1134.64 J / g, which reaches the theoretical value of 82.2. The prepared nanorods are C0304, with hollow inverted cone shape, neatly and compactly grown on Si substrates with diameters of -400nmm. Al deposited by sputtering are arranged closely on C0304 nanorods to form core-shell structure Al/Co3O4 energetic films. When the thickness of deposition A1 is 5 渭 m, Al / Co _ 3O _ 4 has large heat release, reaching 2254.6 J / g, and the initial reaction temperature of Al/Co3O4 is lower (580 鈩，
本文编号：2235957
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