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DSSC用钒掺杂二氧化钛薄膜的制备及性能表征

发布时间:2018-09-17 15:44
【摘要】:为获得高性能电池用二氧化钛薄膜,采用射频磁控溅射法制备了掺V的TiO2薄膜.使用分光光度计、催化反应器和电化学工作站等研究了溅射时间、退火温度和掺钒量等对TiO2薄膜光学性能、光催化性能和超亲水性和电学性能的影响.研究表明溅射时间越长,薄膜紫外光区的透射率越低.3h条件下,在小于400nm区域内,溅射薄膜的透射率已经降至60%以下.退火温度对薄膜的亲水性能和光催化性能有一定的影响,经400℃退火的薄膜具有较好的光催化性能和超亲水性.掺V使薄膜的吸收峰红移和禁带宽度变窄,当掺杂量为0.5%时,TiO2薄膜红移量最大,禁带宽度变也为2.88eV.将制备的掺钒二氧化钛薄膜制备成染料敏化太阳能电池(DSSC),结果表明掺V量为0.5%的二氧化钛薄膜的光响应范围增大,所制备电池的开路电压和短路电流都高于未掺杂电池,其中短路电流从24.82μA增大到了88.15μA.表明电池的综合性能有所提高.
[Abstract]:In order to obtain TIO _ 2 thin films for high performance batteries, V-doped TiO2 films were prepared by RF magnetron sputtering. The effects of sputtering time, annealing temperature and vanadium doping amount on the optical properties, photocatalytic properties, superhydrophilicity and electrical properties of TiO2 films were investigated by spectrophotometer, catalytic reactor and electrochemical workstation. The results show that the longer the sputtering time is, the lower the transmittance of the film is in the ultraviolet region. The transmittance of the sputtering film has been reduced to less than 60% in the region smaller than 400nm. Annealing temperature has a certain effect on the hydrophilicity and photocatalytic properties of the films. The films annealed at 400 鈩,

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