反向外延生长3C-SiC薄膜中残余应力的工艺优化
发布时间：2018-11-20 09:54
【摘要】：本文为改善反向外延生长3C-SiC薄膜中残余应力的工艺优化方法,采用LPCVD技术,将甲烷和氢气按1∶10比例混合后与n-Si(111)衬底反应,制备3C-SiC薄膜。通过X射线衍射分析仪、激光拉曼光谱仪和场发射扫描电子显微镜进行测试和分析。在该方法中,反应恒温1200℃为最优温度,反应温度过高或过低都不利于3C-SiC薄膜生长;在反应温度为1200℃时,为增加薄膜厚度而单纯增加反应时长,缺陷浓度也会相应地增加,从而薄膜结晶质量相应降低;但在1250℃反应温度时,增加反应时长不仅会增加薄膜的厚度,而且也会缓减薄膜中残余应力,同时改善薄膜的结晶质量。另外研究结果还表明:1250℃时经过一个恒温的等时退火工艺后,再降温的方式可进一步降低薄膜中本征残余应力,从而改善薄膜的结晶质量和晶格失配。
[Abstract]:In order to improve the process optimization of residual stress in 3C-SiC thin films grown by reverse epitaxy, 3C-SiC thin films were prepared by LPCVD technique. Methane and hydrogen were mixed at 1:10 and reacted with n-Si (111) substrates. X-ray diffraction analyzer, laser Raman spectrometer and field emission scanning electron microscope were used to test and analyze. In this method, the optimal reaction temperature is 1200 鈩，
本文编号：2344587
[Abstract]:In order to improve the process optimization of residual stress in 3C-SiC thin films grown by reverse epitaxy, 3C-SiC thin films were prepared by LPCVD technique. Methane and hydrogen were mixed at 1:10 and reacted with n-Si (111) substrates. X-ray diffraction analyzer, laser Raman spectrometer and field emission scanning electron microscope were used to test and analyze. In this method, the optimal reaction temperature is 1200 鈩，
本文编号：2344587
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