SiZnSnO薄膜的制备与应用研究
发布时间：2019-02-09 19:46
【摘要】：非晶氧化物半导体(AOS)由于迁移率高,可以在低温下制备等优点而受到研究者的广泛关注。采用AOS作为沟道层的薄膜晶体管(TFT)被认为是下一代大尺寸、高分辨率以及柔性平板显示的主流技术。目前AOS TFT主要是InGaZnO4为沟道层,虽然在日韩等企业中已经逐步实现了工业化,但是仍然面临着In元素成本高,TFT良率低的困扰。这样一个技术变革的时代对我国的平板显示工业是一个难得的机遇。因此,开展我国独立自主的氧化物TFT技术是很有必要的。 本文通过脉冲激光沉积法研究了非晶SiZnSnO薄膜的室温(25℃)制备过程。改变生长过程中的O2分压,发现在5Pa氧分压下对应的SiZnSnO薄膜表面的平整度最好。XRD和HR-TEM表明室温下生长和400℃退火后的薄膜都是处于非晶状态。结合椭圆偏振发现SZTO(0.06)对应的薄膜最致密。紫外-可见光透射谱测试结果表明SiZnSnO薄膜在可见光范围内的透过率都在80%以上。XPS表明Si对薄膜中氧空位具有抑制作用,掺入Si含量越多,薄膜中的氧空位就会越少。 将SiZnSnO应用于TFT的沟道层。室温下制备的TFT性能并不突出,但是在400℃退火后的器件达到了很好的性能,SZTO(0.06)对应的TFT场效应迁移率为μFE=0.80cm2V-1S-1,阈值电压Vth=4.12V,亚阈值摆幅S=0.863V/decade,电流开关比Ion/off≈107.对SiZnSnO TFT的进行了不同相对湿度与气氛环境的稳定性研究,发现TFT背沟道处吸附H_2O会导致关态电流和开态电流的增加,而Si的适当引入会促进TFT器件的长期稳定性。 采用脉冲激光沉积技术制备了SiZnSnO/Si异质结,并通过XPS测定Zn和Sn的芯能级,计算了SiZnSnO/Si的价带带阶,并结合SiZnSnO的光学禁带宽度确定了SiZnSnO/Si异质结的能带结构。
[Abstract]:Amorphous oxide semiconductor (AOS) has attracted much attention due to its high mobility and its ability to be prepared at low temperature. The thin film transistor (TFT) with AOS as channel layer is considered to be the mainstream technology for the next generation of large size, high resolution and flexible flat panel display. At present, AOS TFT is mainly InGaZnO4 as channel layer. Although it has gradually realized industrialization in Japan and South Korea, it still faces the problem of high cost of In elements and low yield of TFT. Such an era of technological change is a rare opportunity for China's flat panel display industry. Therefore, it is necessary to develop independent oxide TFT technology in China. The preparation process of amorphous SiZnSnO films at room temperature (25 鈩，
本文编号：2419331
[Abstract]:Amorphous oxide semiconductor (AOS) has attracted much attention due to its high mobility and its ability to be prepared at low temperature. The thin film transistor (TFT) with AOS as channel layer is considered to be the mainstream technology for the next generation of large size, high resolution and flexible flat panel display. At present, AOS TFT is mainly InGaZnO4 as channel layer. Although it has gradually realized industrialization in Japan and South Korea, it still faces the problem of high cost of In elements and low yield of TFT. Such an era of technological change is a rare opportunity for China's flat panel display industry. Therefore, it is necessary to develop independent oxide TFT technology in China. The preparation process of amorphous SiZnSnO films at room temperature (25 鈩，
本文编号：2419331
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