磁控溅射制备多层结构氧化钒薄膜的研究
发布时间：2019-04-10 10:00
【摘要】：氧化钒是一个非常复杂的体系,作为优良的电子材料,本身有较高的电阻温度系数(TCR),因此在非制冷红外探测器件以及红外成像等领域具有突出优势。到目前为止,氧化钒薄膜材料仍然是红外探测器件热敏电阻的理想材料。可用于非制冷红外探测器的氧化钒薄膜分为有相变特性的和无相变特性的,而无相变的氧化钒薄膜可以避免相变带来的热滞现象对器件性能的影响。该探测器对使用的热敏电阻型薄膜有两个特性要求:合适的电阻温度系数,一般不能低于于-2%/K;较低的室温电阻率,应小于10Ω·cm。本文研究对象是无相变的氧化钒薄膜,制备方法采用直流反应磁控溅射法,研究工艺参数对薄膜电学性能的影响,以此来优化实验的工艺参数,达到提高薄膜的电阻温度系数的目的。同时采用XRD、XPS、SEM等表征分析手段,对无相变的氧化钒薄膜的组分、晶体结构、表面形貌进行表征,分析中间层对薄膜性能的影响。主要内容有:1、采用直流反应磁控溅射法,制备单层无相变的VOx薄膜,分析工艺参数对薄膜电学性能的影响。溅射氧流量改变0.1sccm,方阻值改变一个量级,难以控制。因此研究无相变、多层结构的氧化钒薄膜。2、采用双靶直流反应磁控溅射法,制备无相变的VOx/W/VOx结构薄膜,研究W对薄膜性能的影响。电学特性分析,发现W使得薄膜的方阻-曲线重合得更好。表征分析,发现W层对薄膜的表面形貌影响较大,对结晶的抑制作用主要表现在XRD的衍射峰强度上。3、制备无相变的VOx/V/VOx结构薄膜,研究分析中间V层的溅射时间、多层结构的退火时间、退火氧流量对薄膜电学性能的影响,进行参数优化,制备出性能较好的氧化钒薄膜样品,其室温电阻率为6.88Ω·cm,电阻温度系数可以达到-2.44%/K。通过以上的实验研究,我们对多层结构的氧化钒薄膜有了进一步的了解,在分析中间夹层对薄膜电学性能的影响基础上,制备出性能较好的无相变的氧化钒薄膜样品。
[Abstract]:Vanadium oxide is a very complex system. As an excellent electronic material, vanadium oxide has high resistance temperature coefficient (TCR), so it has prominent advantages in uncooled infrared detector and infrared imaging. So far, vanadium oxide thin film material is still the ideal material for infrared detector thermistor. Vanadium oxide films, which can be used in uncooled infrared detectors, can be divided into two types: phase transition and non-phase transition, and no phase change can avoid the thermal hysteresis caused by phase transition. The detector has two characteristics: the proper temperature coefficient of resistance should not be lower than-2% K, and the lower room temperature resistivity should be less than 10 惟 cm.. The research object of this paper is vanadium oxide film without phase change. DC reactive magnetron sputtering method is used to study the effect of process parameters on the electrical properties of the thin film, so as to optimize the experimental process parameters. The resistance temperature coefficient of the film is improved. At the same time, the composition, crystal structure and surface morphology of vanadium oxide films without phase transition were characterized by XRD,XPS,SEM, and the effect of interlayer on the properties of the films was analyzed. The main contents are as follows: 1. Single-layer VOx films without phase transition were prepared by DC reactive magnetron sputtering, and the effects of process parameters on the electrical properties of the films were analyzed. It is difficult to control the change of the discharge rate of oxygen by 0.1 sccm and the change of square resistance by an order of magnitude. Therefore, phase change-free, multilayer vanadium oxide films were prepared by DC reactive magnetron sputtering with double targets, and the effect of W on the properties of the films was investigated. The effect of W on the properties of the films was studied. In this paper, the effect of W on the properties of VOx/W/VOx films without phase transition was studied. By analyzing the electrical characteristics, it is found that W makes the square resistance-curve of the thin films coincide better. It was found that W layer had a great influence on the surface morphology of the films, and the inhibition of crystallization was mainly reflected in the diffraction peak intensity of XRD. 3. The sputtering time of the intermediate V layer was studied and analyzed, and the VOx/V/VOx structure thin films without phase transition were prepared, and the sputtering time of the interlayer V layer was analyzed. The annealing time of multilayer structure and the effect of annealing oxygen flow rate on the electrical properties of the thin films were optimized. The vanadium oxide thin films with good properties were prepared. The room temperature resistivity of the films was 6.88 惟 cm,. The temperature coefficient of resistance can reach-2.44%. Through the above experimental studies, we have a further understanding of the multilayer structure of vanadium oxide film. On the basis of analyzing the effect of the interlayer on the electrical properties of the thin film, the better phase-change-free vanadium oxide thin film samples have been prepared.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O484
本文编号：2455702
[Abstract]:Vanadium oxide is a very complex system. As an excellent electronic material, vanadium oxide has high resistance temperature coefficient (TCR), so it has prominent advantages in uncooled infrared detector and infrared imaging. So far, vanadium oxide thin film material is still the ideal material for infrared detector thermistor. Vanadium oxide films, which can be used in uncooled infrared detectors, can be divided into two types: phase transition and non-phase transition, and no phase change can avoid the thermal hysteresis caused by phase transition. The detector has two characteristics: the proper temperature coefficient of resistance should not be lower than-2% K, and the lower room temperature resistivity should be less than 10 惟 cm.. The research object of this paper is vanadium oxide film without phase change. DC reactive magnetron sputtering method is used to study the effect of process parameters on the electrical properties of the thin film, so as to optimize the experimental process parameters. The resistance temperature coefficient of the film is improved. At the same time, the composition, crystal structure and surface morphology of vanadium oxide films without phase transition were characterized by XRD,XPS,SEM, and the effect of interlayer on the properties of the films was analyzed. The main contents are as follows: 1. Single-layer VOx films without phase transition were prepared by DC reactive magnetron sputtering, and the effects of process parameters on the electrical properties of the films were analyzed. It is difficult to control the change of the discharge rate of oxygen by 0.1 sccm and the change of square resistance by an order of magnitude. Therefore, phase change-free, multilayer vanadium oxide films were prepared by DC reactive magnetron sputtering with double targets, and the effect of W on the properties of the films was investigated. The effect of W on the properties of the films was studied. In this paper, the effect of W on the properties of VOx/W/VOx films without phase transition was studied. By analyzing the electrical characteristics, it is found that W makes the square resistance-curve of the thin films coincide better. It was found that W layer had a great influence on the surface morphology of the films, and the inhibition of crystallization was mainly reflected in the diffraction peak intensity of XRD. 3. The sputtering time of the intermediate V layer was studied and analyzed, and the VOx/V/VOx structure thin films without phase transition were prepared, and the sputtering time of the interlayer V layer was analyzed. The annealing time of multilayer structure and the effect of annealing oxygen flow rate on the electrical properties of the thin films were optimized. The vanadium oxide thin films with good properties were prepared. The room temperature resistivity of the films was 6.88 惟 cm,. The temperature coefficient of resistance can reach-2.44%. Through the above experimental studies, we have a further understanding of the multilayer structure of vanadium oxide film. On the basis of analyzing the effect of the interlayer on the electrical properties of the thin film, the better phase-change-free vanadium oxide thin film samples have been prepared.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O484
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