CoFe基磁性薄膜制备及其表征方法研究
发布时间：2019-04-24 10:53
【摘要】：本文主要研究了CoFeB薄膜和TbFeCo薄膜样品,探索了这些薄膜的制备工艺参数,分析了薄膜的磁、磁光、磁电和结构特性。本文主要研究内容展开如下:首先,利用磁控溅射系统制备了结构为Ta/CoFeB/MgO/Ta的样品,系统研究了CoFeB薄膜水平磁各向异性和结构特性。以不同功率溅射制备了CoFeB合金薄膜样品并在高真空下退火处理。观察到低功率生长的薄膜始终具有磁各向同性,而高功率生长的薄膜随着退火温度的升高,由起始的单轴磁各向异性逐渐向磁各向同性转变。X射线衍射分析也印证了CoFeB薄膜随退火温度的升高,薄膜由非晶态逐渐向晶态转变。观察到低功率生长的CoFeB的(110)峰值高于高功率生长的样品峰值,表明低功率生长的薄膜晶粒尺寸更大。同时,当退火温度高于400℃时,低功率生长的CoFeB样品的矫顽力大于高功率生长薄膜的矫顽力。随后,研究了沉积态下磁性层厚度对薄膜磁特性的影响,结果表明薄膜随着磁性层厚度的增加,薄膜面内磁各向异性由弱到强再到弱的变化规律,且在磁性层厚度为36 nm时薄膜的面内磁各向异性达到最大。其次,制备了结构为Ta/Pd/CoFeB/MgO/Ta的样品,系统研究了CoFeB薄膜垂直磁各向异性。观察到退火时间、磁性层厚度和MgO厚度对CoFe B薄膜垂直磁各向异性具有较大的影响。在研究退火时间对CoFeB薄膜反常霍尔效应影响时,选取磁性层厚度为1.6 nm,MgO厚度为1.8 nm,薄膜在退火30 min处理时,薄膜垂直磁各向异性最优。在研究磁性层厚度时,选取CoFeB薄膜厚度区间为1.0 nm到2.0 nm,观察到薄膜都具有优良的垂直磁各向异性,且CoFe B厚度为1.6 nm时,薄膜具有最大矫顽力。在研究MgO层厚度时,选取MgO层厚度区间为0.6 nm到3.0 nm,结果表明薄膜矫顽力随MgO层厚增加出现先增大后减小现象。然后,利用镶嵌靶技术,制备了结构为Ta/TbFeCo/Ta的样品,系统研究了TbFeCo薄膜的磁学性质和结构特性。在研究溅射功率对薄膜特性的影响时,结果表明沉积的TbFeCo薄膜为非晶结构,通过改变溅射功率,实现薄膜在富TM状态和富RE状态之间过渡。在研究薄膜厚度对TbFeCo薄膜磁电和磁光效应影响时,结果表明富FeCo状态下的TbFeCo薄膜矫顽力随着薄膜厚度的增加而增加,同时验证了反常霍尔电压和薄膜厚度成反比关系。最后,根据已有的实验结果,以具有垂直磁各向异性的CoFeB薄膜和非晶TbFeCo薄膜,中间用MgO层将两磁性层隔开,简单的制备了结构为Ta/Pd/CoFeB/MgO/TbFeCo/Ta多层膜。经过退火处理后,CoFeB层和TbFeCo层在不同的外磁场条件下发生了连续磁化翻转。
[Abstract]:In this paper, the samples of CoFeB and TbFeCo films have been studied. The preparation parameters of these films have been explored. The magnetic, magneto-optical, magnetoelectric and structural properties of the films have been analyzed. The main contents of this thesis are as follows: firstly, samples with Ta/CoFeB/MgO/Ta structure were prepared by magnetron sputtering system. The horizontal magnetic anisotropy and structural properties of CoFeB thin films were studied systematically. CoFeB alloy thin films were prepared by sputtering with different power and annealed in high vacuum. It is observed that the films grown at low power are always magnetically isotropic, while the films grown at high power are characterized by the increase of annealing temperature. From the initial uniaxial magnetic anisotropy to the magneto-isotropic transformation, X-ray diffraction analysis also confirmed that the CoFeB thin film changed from amorphous state to crystalline state with the increase of annealing temperature. It was observed that the (110) peak of low power growth CoFeB was higher than that of high power growth sample, indicating that the grain size of low power grown film was larger than that of high power growth sample. At the same time, when the annealing temperature is higher than 400 鈩，
本文编号：2464390
[Abstract]:In this paper, the samples of CoFeB and TbFeCo films have been studied. The preparation parameters of these films have been explored. The magnetic, magneto-optical, magnetoelectric and structural properties of the films have been analyzed. The main contents of this thesis are as follows: firstly, samples with Ta/CoFeB/MgO/Ta structure were prepared by magnetron sputtering system. The horizontal magnetic anisotropy and structural properties of CoFeB thin films were studied systematically. CoFeB alloy thin films were prepared by sputtering with different power and annealed in high vacuum. It is observed that the films grown at low power are always magnetically isotropic, while the films grown at high power are characterized by the increase of annealing temperature. From the initial uniaxial magnetic anisotropy to the magneto-isotropic transformation, X-ray diffraction analysis also confirmed that the CoFeB thin film changed from amorphous state to crystalline state with the increase of annealing temperature. It was observed that the (110) peak of low power growth CoFeB was higher than that of high power growth sample, indicating that the grain size of low power grown film was larger than that of high power growth sample. At the same time, when the annealing temperature is higher than 400 鈩，
本文编号：2464390
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