具有条纹磁畴结构的NiFe薄膜的制备与磁各向异性研究
发布时间：2019-06-05 18:46
【摘要】：具有条纹磁畴结构的磁性薄膜表现出面内转动磁各向异性,对于解决高频电子器件的方向性问题起着至关重要的作用.本文采用射频磁控溅射的方法,研究了NiFe薄膜的厚度、溅射功率密度、溅射气压等制备工艺参数对条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律.研究发现,在功率密度15.6 W/cm~2与溅射气压2 mTorr(1 Torr=1.33322×102Pa)下生长的NiFe薄膜,表现出条纹磁畴的临界厚度在250 nm到300 nm之间.厚度为300 nm的薄膜比250 nm薄膜的垂直磁各向异性场增大近一倍,从而磁矩偏离膜面形成条纹磁畴结构,并表现出面内转动磁各向异性.高溅射功率密度可以降低薄膜出现条纹磁畴的临界厚度.在相同功率密度15.6 W/cm~2下生长300 nm的NiFe薄膜,随着溅射气压由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向异性场逐渐由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面内转动磁各向异性场由72.5 Oe增大到141.9 Oe,条纹磁畴周期从0.53μm单调减小到0.24μm.NiFe薄膜的断面结构表明柱状晶的形成是表现出条纹磁畴结构的本质原因,高功率密度下低溅射气压有利于柱状晶结构的形成,表现出规整的条纹磁畴结构,高溅射气压会导致柱状晶纤细化,面内转动磁各向异性与面外垂直磁各向异性增强,条纹磁畴结构变得混乱.
[Abstract]:The magnetic thin films with striped magnetic domain structure exhibit in-plane rotational magnetic anisotropy, which plays an important role in solving the directivity problem of high frequency electronic devices. In this paper, the preparation parameters of NiFe thin films, such as thickness, sputter power density and sputter pressure, have been studied by RF magnetron sputter, such as stripe magnetic domain structure, in-plane static magnetic anisotropy, in-plane rotational magnetic anisotropy, etc. The influence of vertical magnetic anisotropy. It is found that the critical thickness of stripe domain in NiFe thin films grown at power density of 15.6 W/cm~2 and sputter pressure of 2 mTorr (1 Torr=1.33322 脳 102Pa) is between 250 nm and 300 nm. The vertical magnetic anisotropy field of 300 nm thin films is nearly twice as large as that of 250 nm thin films, so that the magnetic moment deviates from the film surface to form a striped magnetic domain structure and shows in-plane rotational magnetic anisotropy. High sputter power density can reduce the critical thickness of stripe magnetic domain in thin films. 300 nm NiFe thin films were grown at the same power density of 15.6 W/cm~2. The vertical magnetic anisotropy field of the films increased from 1247.8 Oe (1 Oe=79.5775 A 鈮，
本文编号：2493745
[Abstract]:The magnetic thin films with striped magnetic domain structure exhibit in-plane rotational magnetic anisotropy, which plays an important role in solving the directivity problem of high frequency electronic devices. In this paper, the preparation parameters of NiFe thin films, such as thickness, sputter power density and sputter pressure, have been studied by RF magnetron sputter, such as stripe magnetic domain structure, in-plane static magnetic anisotropy, in-plane rotational magnetic anisotropy, etc. The influence of vertical magnetic anisotropy. It is found that the critical thickness of stripe domain in NiFe thin films grown at power density of 15.6 W/cm~2 and sputter pressure of 2 mTorr (1 Torr=1.33322 脳 102Pa) is between 250 nm and 300 nm. The vertical magnetic anisotropy field of 300 nm thin films is nearly twice as large as that of 250 nm thin films, so that the magnetic moment deviates from the film surface to form a striped magnetic domain structure and shows in-plane rotational magnetic anisotropy. High sputter power density can reduce the critical thickness of stripe magnetic domain in thin films. 300 nm NiFe thin films were grown at the same power density of 15.6 W/cm~2. The vertical magnetic anisotropy field of the films increased from 1247.8 Oe (1 Oe=79.5775 A 鈮，
本文编号：2493745
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