生长于Pt/Ti/SiO 2 /Si衬底的Zn x Ni （1-x） Mn 2 O 4 薄膜的结构与光学性质（英文）
发布时间：2021-02-14 15:49
采用化学溶液法在Pt/Ti/SiO2/Si衬底上生长了ZnxNi（1-x）Mn2O4（ZNMO,x=0,0.05,0.1,0.15,0.2,0.25）尖晶石氧化物薄膜。X射线衍射（XRD）与场发射扫描电子显微镜（FESEM）分析结果表明,Zn的掺杂浓度对ZNMO薄膜的结晶性和微结构有明显影响。用椭圆偏振光谱仪测量分析了ZNMO薄膜在300-1 100 nm波段的光学常数,并讨论了Zn掺杂对折射率n和消光系数k的影响。在薄膜的拉曼光谱中观测到两个峰A1 g与F2g,A1 g模式的相对峰位随着Zn的掺杂浓度x的增大而减小。由于晶格应变与晶格失配,拉曼峰峰位随Zn掺杂浓度的变化而轻微移动。
【文章来源】：红外与毫米波学报. 2016,35(06)北大核心
【文章页数】：5 页
【部分图文】：
ZNMO(x=0，0．05，0．1，0．15，0．2，0．25)薄膜的XＲD
-(f)分别为当x=0，0．05，0．1，0．15，0．2，0．25，入
6期WANGWan-Shengetal:ThestructuralandopticalpropertiesofZnxNi(1-x)Mn2O4filmsgrownonPt/Ti/SiO2/Sisubstrate(x=0，0．05，0．1，0．15，0．2，0．25)filmsareshowninFig．4．Fig．4TheＲefractiveindexnandextinctioncoefficientκoftheZNMO(x=0，0．05，0．1，0．15，0．2，0．25)films图4ZNMO(x=0，0．05，0．1，0．15，0．2，0．25)薄膜的折射率n与消光系数κItiswellknownthatcrystallinity，electronicbandstructureandlatticedefectareimportantparameters，whichcaninfluencetheopticalconstants．OwningtoZnsubstituting，theelectronicbandstructureisaffectedandthuscanfurtherinfluencetheopticalresponsesofZNMOfilms［14，24］．AsshowninFig．4，therefractiveindexnincreaseswithincreasingZnconcentrationfrom0．05to0．25inthewavelengthrangeof300～440nm．Besidestheeffectofelectronicband，crystallinityisalsoacrucialparameter．ThatiswhytherefractiveindexofNiMn2O4(x=0)isthelargestamongallthesamplesinthewave-lengthrangeof510～1100nm［25-26］．Thethicknessesofthefilmsalsomakeadifferenceintherefractivein-dex［27］．AllthefactorsmentionedaboveresultinthattherefractiveindexchangeserraticallywithincreasingZnconcentrationinthewavelengthrangeof300-1100nm．Fortheextinctioncoefficientκ，thepeaksincurvesofthesamples(x=0，0．05，0．1，0．15and0．2)indicatestrongopticalabsorption，whichmightberesultedfromelectronictransition．Thevaluesofpeak
本文编号：3033499
【文章来源】：红外与毫米波学报. 2016,35(06)北大核心
【文章页数】：5 页
【部分图文】：
ZNMO(x=0，0．05，0．1，0．15，0．2，0．25)薄膜的XＲD
-(f)分别为当x=0，0．05，0．1，0．15，0．2，0．25，入
6期WANGWan-Shengetal:ThestructuralandopticalpropertiesofZnxNi(1-x)Mn2O4filmsgrownonPt/Ti/SiO2/Sisubstrate(x=0，0．05，0．1，0．15，0．2，0．25)filmsareshowninFig．4．Fig．4TheＲefractiveindexnandextinctioncoefficientκoftheZNMO(x=0，0．05，0．1，0．15，0．2，0．25)films图4ZNMO(x=0，0．05，0．1，0．15，0．2，0．25)薄膜的折射率n与消光系数κItiswellknownthatcrystallinity，electronicbandstructureandlatticedefectareimportantparameters，whichcaninfluencetheopticalconstants．OwningtoZnsubstituting，theelectronicbandstructureisaffectedandthuscanfurtherinfluencetheopticalresponsesofZNMOfilms［14，24］．AsshowninFig．4，therefractiveindexnincreaseswithincreasingZnconcentrationfrom0．05to0．25inthewavelengthrangeof300～440nm．Besidestheeffectofelectronicband，crystallinityisalsoacrucialparameter．ThatiswhytherefractiveindexofNiMn2O4(x=0)isthelargestamongallthesamplesinthewave-lengthrangeof510～1100nm［25-26］．Thethicknessesofthefilmsalsomakeadifferenceintherefractivein-dex［27］．AllthefactorsmentionedaboveresultinthattherefractiveindexchangeserraticallywithincreasingZnconcentrationinthewavelengthrangeof300-1100nm．Fortheextinctioncoefficientκ，thepeaksincurvesofthesamples(x=0，0．05，0．1，0．15and0．2)indicatestrongopticalabsorption，whichmightberesultedfromelectronictransition．Thevaluesofpeak
本文编号：3033499
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