铌掺杂锆钛酸铅薄膜的制备及其用于微机电系统的机电特性

发布时间：2018-02-02 01:26

本文关键词： 铌掺杂锆钛酸铅薄膜微机电系统溶胶-凝胶法机电特性　出处：《硅酸盐学报》2017年07期 　论文类型：期刊论文

【摘要】：采用溶胶-凝胶法在LaNiO_3/Si衬底上制备了Nb_(0.02)-Pb(Zr_(0.6)Ti_(0.4))O_3(PNZT)薄膜及其驱动的微机电系统(MEMS)技术制作的微悬臂梁器件,研究了PNZT薄膜结构和电学性能以及悬臂梁器件的机电特性。结果表明:该PNZT薄膜具有随机取向的钙钛矿相结构,铁电剩余极化强度和矫顽场分别约为20mC/cm~2和27 kV/cm。通过压电响应力显微镜(PFM)和MEMS悬臂梁振动测试,计算得出PNZT薄膜的纵向压电系数d_(33)和横向压电系数d_(31)分别约为70 pm/V和90 pm/V,与已报道的外延生长PZT薄膜d_(33)和d_(31)值相当。同时MEMS悬臂梁在大气压下也表现出较小的机械损耗,一阶谐振时的机械品质因数Q值达到了122。表明该PNZT薄膜未来在高性能铁电和压电MEMS器件领域具有广泛的应用前景。
[Abstract]:Nbsp _ (0.02) -Pb _ (2) ZR _ (0. 6) TiP _ (0. 4) tippe _ (0. 4) O _ (3) P _ (NZT) was prepared on LaNiO_3/Si substrate by sol-gel method. A micro cantilever beam device fabricated by thin film and its actuated micro electromechanical system (MEMS) technology. The structure and electrical properties of PNZT thin films and the electromechanical properties of cantilever beam devices are studied. The results show that the PNZT thin films have randomly oriented perovskite structure. The ferroelectric remanent polarization strength and coercive field are about 20mC / cm ~ (2) and 27 kV / cm ~ (2) respectively. The vibration of the cantilever beam is measured by piezoelectric response force microscope (PFM) and MEMS cantilever beam. The longitudinal piezoelectric coefficients of PNZT thin films are calculated to be about 70 pm/V and 90 pm/V respectively, and the transverse piezoelectric coefficients of d / s are about 70 pm/V and 90 pm/V, respectively. It is similar to the reported values of PZT thin film d _ s _ (33) and d _ s _ (31). At the same time, the MEMS cantilever beam also shows a smaller mechanical loss at atmospheric pressure. The mechanical quality factor Q value of the first order resonance is 122. It indicates that the PNZT thin film has a wide application prospect in the field of high performance ferroelectric and piezoelectric MEMS devices in the future.
【作者单位】：北方工业大学机械与材料工程学院;深圳光启高等理工研究院;北京科技大学新材料技术研究院;
【基金】：国家自然科学基金项目(51305005,51375017) 北京市自然科学基金项目(3172009) 北京市自然科学基金委员会-北京市科学技术研究院联合资助项目(16L00001) 深圳市海外高层次人才团队专项资金资助项目(KQE201106020031A)
【分类号】：TB383.2;TH-39
【正文快照】： Pb(Zr,Ti)O3(PZT)铁电薄膜具有优良的压电性能,已在微机电系统(MEMS)的微传感器和微驱动器领域得到了广泛应用[1]。在MEMS器件中,PZT薄膜的压电性能尤为关键,它决定MEMS器件的输出位移、输出力和传感灵敏度等性能。因此,采用改性掺杂的高压电性能PZT薄膜是提高MEMS器件性能

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