MEMS惯性器件敏感电容结构相关温度漂移特性仿真（英文）

发布时间：2018-04-20 05:45

  本文选题：MEMS + 惯性器件　； 参考：《中国惯性技术学报》2017年03期

【摘要】：基于MEMS器件的微型惯导系统的精度和MEMS惯性器件的全温稳定性具有很高的相关性。MEMS结构相关的温度漂移主要来自材料之间的热失配应力,工艺引入的应力,以及封装应力等。而相关应力在MEMS结构中的分布以及所造成的应变又和MEMS结构具有一定相关性。通过ANSYS有限元分析软件建立了多种MEMS惯性器件常用梁-质量块结构的FEM模型,具体包括悬臂梁结构、双端固支梁结构、L形梁结构、对角支撑梁结构。通过热-力耦合仿真,研究了热失配应力在上述结构中的分布以及所产生的结构变形。对比分析了不同芯片粘胶形式,包括中心粘胶、三点粘胶、整片粘胶对上述MEMS结构引入的封装应力以及其全温(-40℃~60℃)温度漂移特性。此外,还分析研究了不同衬底厚度对MEMS结构封装应力的隔离效果。
[Abstract]:The precision of micro inertial navigation system based on MEMS device and the whole temperature stability of MEMS inertial device are highly correlated. The temperature drift related to MEMS structure mainly comes from the thermal mismatch stress between materials, the stress introduced by technology, and the encapsulation stress and so on. The distribution of the relative stress in the MEMS structure and the strain caused by it are related to the MEMS structure. By means of ANSYS finite element analysis software, the FEM models of the beam-mass block structures commonly used in MEMS inertial devices are established, including cantilever beam structure, double end clamped beam structure and L-shaped beam structure, diagonally supported beam structure. The distribution of thermal mismatch stress in the above structures and the resulting structural deformation are studied by thermal-mechanical coupling simulation. The packaging stress induced by different chip viscose forms, including central viscose, three-point viscose, whole piece viscose on the MEMS structure, and the temperature drift characteristics of the whole chip were analyzed in this paper, including central viscose, three-point viscose, and the whole chip viscose at 60 鈩，

本文编号：1776506