RF MEMS开关机电性能研究

发布时间：2018-08-26 13:24

【摘要】：随着无线通信的不断发展,对射频器件小型化、低功耗、高性能的需求逐步增长,RF MEMS开关凭借其体积小、功耗低、隔离度高以及插损低等优异特性具有替代传统PIN开关和FET开关的潜力,可在移相器、相控雷达和卫星导航等无线通讯领域广泛应用。本文分析了MEMS开关的机电与射频性能参数,并对其进行实验验证不同实验条件对性能参数的影响。研究分析了接触式开关的可靠性问题,设计了一种RF MEMS开关可靠性测试系统。设计了多层固支梁结构的接触式并联开关,并对开关进行了加工制作和测试分析。论文的主要内容如下:(1)对接触式开关的机电特性进行了研究,分析推导了开关弹性系数、驱动电压以及开关速度等性能参数,通过实验测试验证了驱动电压对接触电阻的影响以及传输功率对开关速度的影响;建立了并联接触式开关的电磁模型,根据模型提取了RLC参数,推导了开关在up态插损和down态隔离度的计算公式,并通过测试实验验证了其正确性,测试分析了驱动电压对开关S参数的影响。(2)分析了在于接触式开关中接触电阻和功率对开关可靠性的影响,设计了一种RF MEMS开关可靠性测试系统,通过所设计的测试系统对开关进行寿命测试实验,验证了接触损伤引起的开关失效,对开关的功率容量进行了实验测试,验证了大功率对开关传输的影响。(3)设计了多层固支梁结构的并联接触式开关。通过对开关的机电与射频仿真确定了开关的结构参数,仿真分析了梁的开孔对开关驱动电压的影响,以及开关结构对可靠性的影响。仿真结果表明开关在GHz03~2频率范围内插入损耗优于260.-d B,回波损耗优于-d B.21 5,隔离度优于-26dB,开关的驱动电压为V40,开关时间约为μs21;基于表面微细加工工艺对开关进行了流片,对开关进行了直流测试,分析其失效原理,提出了改进方法。
[Abstract]:With the continuous development of wireless communication, the demand for the miniaturization, low power consumption and high performance of RF devices has gradually increased with the small size and low power consumption of RF MEMS switches. The excellent characteristics of high isolation and low insertion loss have the potential to replace the traditional PIN switch and FET switch, and can be widely used in the field of phase shifter, phase-controlled radar and satellite navigation. In this paper, the electromechanical and RF performance parameters of MEMS switches are analyzed, and the effects of different experimental conditions on the performance parameters are verified by experiments. The reliability of contact switch is analyzed and a reliability test system of RF MEMS switch is designed. The contact parallel switch with multi-layer fixed beam structure is designed, and the switch is fabricated and tested. The main contents of this paper are as follows: (1) the mechanical and electrical characteristics of contact switch are studied, and the performance parameters such as elastic coefficient, driving voltage and switching speed are analyzed and deduced. The effect of driving voltage on contact resistance and the influence of transmission power on switch speed are verified by experimental tests. The electromagnetic model of parallel contact switch is established, and the RLC parameters are extracted according to the model. The formulas for calculating the insertion loss of the switch in up state and the isolation degree of the down state are derived, and the correctness of the formula is verified by the test results. The influence of driving voltage on switch S parameters is analyzed. (2) the influence of contact resistance and power on the reliability of switch is analyzed, and a reliability test system of RF MEMS switch is designed. Through the test system designed to test the life of the switch, the failure of the switch caused by contact damage is verified, and the power capacity of the switch is tested experimentally. The effect of high power on switch transmission is verified. (3) parallel contact switch with multi-layer fixed beam structure is designed. The structural parameters of the switch are determined by the electromechanical and RF simulation of the switch. The effect of the opening of the beam on the driving voltage of the switch and the influence of the structure of the switch on the reliability are simulated and analyzed. The simulation results show that the insertion loss in the GHz03~2 frequency range is better than 260.-dB, the echo loss is better than -dB.21.5, the isolation degree is better than -26dB, the driving voltage of the switch is V40, the switching time is about 渭 s 21. The DC test of the switch is carried out, the failure principle is analyzed, and the improved method is put forward.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TH-39

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