当前位置:主页 > 科技论文 > 机电工程论文 >

针对工艺偏差的MEMS器件结构参数优化设计

发布时间:2018-11-16 16:55
【摘要】:MEMS器件作为集成电路和微机械的结合,性能对制造工艺具有更大的依赖性,故对其设计制造引入可制造性设计(DFM)思想势在必行。可制造性设计的思想,即在设计的源头阶段综合考虑制造中影响性能和良品率的工艺偏差,通过适当的补偿设计对器件参数提前补偿,从而抵消工艺误差和效应带来的影响,实现工艺与设计的同步。本文以MEMS器件中梁结构和梳齿结构器件为研究对象,这一类器件都是MEMS器件中重要的基础功能单元,其谐振频率等性能值都是物理参数、器件尺寸和截面形状的函数,对工程设计来说有很重要的意义。而MEMS工艺偏差除了物理参数偏差,最主要的就是一些工艺效应导致的几何尺寸偏差和形貌偏差。本文针对工艺效应对谐振频率的影响展开研究,包括DRIE工艺导致的梯形剖面形状(梯形效应)、Footing效应导致的底部过刻蚀、TMDE工艺造成的波纹剖面形状(波纹效应),这三种工艺效应是MEMS器件工艺加工中最常见的工艺效应。本文将以器件谐振频率为研究目标,针对这三种工艺效应对器件造成的偏差,建立其修正模型。针对MEMS器件中的梁结构,对纵向运动的梁和横向运动的梁分别建立基于单个工艺效应以及多个工艺效应共同作用下的修正模型。本文选取固支梁结构,在ANSYS14.5平台上进行建模与仿真,验证了纵向运动的梁结构的谐振频率修正模型的正确性。同理,选取悬臂梁结构进行ANSYS仿真与建模,验证了横向运动的梁结构修正模型的正确性。从而验证了梁结构修正模型对于MEMS器件中常见的固支梁结构和悬臂梁结构都是适用的。针对MEMS器件中的梳齿结构,以梳状谐振器为研究对象,运用横向运动的梁结构模型结论,对其建立基于不同工艺效应情况下的谐振频率修正模型,并在ANSYS 14.5平台上对梳状谐振器进行建模与仿真,验证了修正模型的正确性。根据器件在工艺偏差下的修正模型,本论文完成了对这三类器件的理想SPICE等效电路模型相应的修正,利用ANSYS仿真结果验证了修正等效电路模型的正确性。最后,根据器件结构参数对器件性能的影响,提出可以减小不确定性因素影响的方案,根据已有的设计优化算法,实现工艺补偿设计;并在C++ Builder软件平台上编写可视化软件,最终实现基于工艺偏差的MEMS器件结构参数的自动优化设计。文中详细介绍了优化流程和软件功能及使用。把DFM思想实现于MEMS设计过程中是MEMS发展的必经之路,本文简要展示了DFM思想应用于MEMS简单器件谐振频率自动优化的方法,为MEMS器件的可制造性设计提供了思路与依据。
[Abstract]:As a combination of integrated circuits and micromachineries, MEMS devices have greater dependence on manufacturing process, so it is imperative to introduce manufacturability design (DFM) into its design and manufacture. The idea of manufacturability design is to consider synthetically the process deviation which affects the performance and the rate of good product in the source stage of the design, and compensate the device parameters in advance through the appropriate compensation design, thus counteracting the influence of the process error and effect. The synchronization of process and design is realized. In this paper, the beam structure and comb structure devices in MEMS devices are studied. These devices are important basic functional units in MEMS devices. The resonance frequency and other performance values are all functions of physical parameters, device size and section shape. It is of great significance to engineering design. In addition to the deviation of physical parameters, the most important process deviation of MEMS is the geometric size deviation and shape deviation caused by some process effects. In this paper, the influence of process effect on resonant frequency is studied, including trapezoidal profile shape caused by DRIE process (bottom overetching caused by trapezoid effect), Footing effect), corrugated profile shape (ripple effect) caused by TMDE process. These three process effects are the most common process effects in the processing of MEMS devices. In this paper, the resonant frequency of the device is taken as the research object, and the modified model is established for the deviation caused by these three process effects. For the beam structure in MEMS devices, a modified model based on single process effect and multiple process effects is established for the longitudinal and transverse motion beams, respectively. In this paper, the fixed beam structure is selected and modeled and simulated on the ANSYS14.5 platform, which verifies the correctness of the resonant frequency correction model of the longitudinal moving beam structure. In the same way, the ANSYS simulation and modeling of cantilever beam structure is carried out, which verifies the correctness of the modified beam structure model with transverse motion. It is verified that the modified model of beam structure is suitable for both fixed beam structure and cantilever beam structure which are commonly used in MEMS devices. Aiming at the comb structure in MEMS devices, the comb resonator is taken as the research object, and the resonant frequency correction model based on different process effects is established by using the conclusion of the beam structure model of transverse motion. The modeling and simulation of the comb resonator on ANSYS 14.5 platform verify the correctness of the modified model. According to the modified model of the device under the process deviation, the corresponding correction of the ideal SPICE equivalent circuit model of these three kinds of devices is completed in this paper, and the correctness of the modified equivalent circuit model is verified by the ANSYS simulation results. Finally, according to the influence of the device structure parameters on the device performance, the scheme which can reduce the influence of uncertainty factors is put forward, and the process compensation design is realized according to the existing design optimization algorithm. The visual software is written on the C Builder software platform, and the automatic optimization design of the MEMS device structure parameters based on the process deviation is finally realized. The optimization flow, software function and application are introduced in detail in this paper. It is the only way for the development of MEMS to realize the idea of DFM in the process of MEMS design. This paper briefly demonstrates the method of applying DFM idea to the automatic optimization of resonance frequency of MEMS simple devices, which provides the train of thought and basis for the manufacturability design of MEMS devices.
【学位授予单位】:东南大学
【学位级别】:硕士
【学位授予年份】:2016
【分类号】:TH-39

【参考文献】

相关期刊论文 前10条

1 郑诚;;浅谈可制造性设计(DFM)[J];科技信息;2013年06期

2 张鉴;黄庆安;李伟华;;一种可用于Footing效应模拟的ICP刻蚀模型[J];仪器仪表学报;2007年12期

3 孙玉国;;残余应力对RF MEMS开关谐振频率偏移的影响[J];噪声与振动控制;2007年06期

4 吴广峰;胡鸿胜;朱文坚;;LIGA工艺基础及其发展趋势[J];机电工程技术;2007年12期

5 林忠华,胡国清,刘文艳,张慧杰;微机电系统的研究与展望[J];微电子学;2005年01期

6 朱长纯,赵红坡,韩建强,崔万照;MEMS薄膜中的残余应力问题[J];微纳电子技术;2003年10期

7 闻飞纳,李伟华,戎华;梳状谐振器的F-I类比宏模型及SPICE分析[J];固体电子学研究与进展;2003年03期

8 张威,张大成,王阳元;MEMS概况及发展趋势[J];微纳电子技术;2002年01期

9 李国平,陈子辰;微机电系统的研究内容与发展现状[J];微电子学;2001年06期

10 梁春广,徐永青,杨拥军;MEMS光开关[J];半导体学报;2001年12期

相关博士学位论文 前1条

1 赵江铭;横向梳状硅微静电谐振器机械性能分析与实验研究[D];上海大学;2006年

相关硕士学位论文 前3条

1 许立;梳齿式振动微机械谐振器的相关特性研究[D];杭州电子科技大学;2010年

2 马睿;硅快速深刻蚀技术的研究[D];西安工业大学;2009年

3 闻飞纳;MEMS器件系统级仿真技术研究[D];东南大学;2004年



本文编号:2336079

资料下载
论文发表

本文链接:https://www.wllwen.com/jixiegongchenglunwen/2336079.html


Copyright(c)文论论文网All Rights Reserved | 网站地图 |

版权申明:资料由用户8f4f5***提供,本站仅收录摘要或目录,作者需要删除请E-mail邮箱bigeng88@qq.com