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UV-LIGA工艺误差对MEMS万向惯性开关性能的影响

发布时间:2019-02-13 17:12
【摘要】:为提高微机电系统(MEMS)万向惯性开关的性能,实现工程化应用,对其进行工艺误差与性能关系研究.基于多层UV-LIGA工艺制作多个开关样机,进行主要结构尺寸测量,并确定工艺误差方向;从UV-LIGA工艺过程的曝光、显影与电铸、腐蚀3个阶段,分析误差的产生机理,并进一步分析单一结构误差、非对称误差和偏心误差对开关阈值和接触时间的影响.结果表明:弹簧线宽、厚度、侧壁倾角和两电极间隙等单一结构尺寸的增大会导致阈值增大;非对称误差会导致开关各向刚度不一致,使阈值散布更大;偏心误差会大幅度减小开关轴向阈值,而对径向阈值影响较小.对多个开关样机的测试结果验证了开关工艺误差及单一结构误差对阈值影响的正确性.
[Abstract]:In order to improve the performance of (MEMS) universal inertial switch and realize its engineering application, the relationship between process error and performance is studied. Based on the multi-layer UV-LIGA process, several switch prototypes are made to measure the main structure dimensions and determine the error direction of the process. From the three stages of exposure, development and electroforming, corrosion of UV-LIGA process, the mechanism of error is analyzed, and the effects of single structure error, asymmetric error and eccentric error on the threshold value and contact time of switch are further analyzed. The results show that the threshold value will increase with the increase of spring width, thickness, side wall inclination angle and gap between two electrodes, and the asymmetry error will lead to the inconsistency of the stiffness of each direction of the switch, which will make the threshold dispersion larger. The eccentric error will greatly reduce the axial threshold of the switch, but have little effect on the radial threshold. The experimental results of several prototypes of switches verify the correctness of the effect of switching process error and single structure error on the threshold value.
【作者单位】: 南京理工大学机械工程学院;
【基金】:国家自然科学基金资助项目(51475245)
【分类号】:TH-39

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