K-Cu-S三元体系准一维纳米结构的生长及其电学性能表征

发布时间：2018-01-11 23:32

本文关键词：K-Cu-S三元体系准一维纳米结构的生长及其电学性能表征　出处：《合肥工业大学》2015年硕士论文　论文类型：学位论文

【摘要】：金属硫化物纳米材料因具有优异的光电特性而成为太阳能能量转换、光电器件、催化等前沿领域的研究热点。对Cu-S体系成功掺杂,有效改变了Cu-S体系晶体结构和光学性能,有助于拓展硫化物纳米材料在纳米光电子学研究中的新应用。K-Cu-S三元体系是一类重要的铜硫酸盐化合物,根据K+掺入Cu-S晶格体系的含量不同,铜离子不同的配位数,铜原子不同的位置,形成不同结构的三元硫化物并表现出不同的性质,如具有准一维结构的KCu7S4表现出低温相变和电阻异常现象,可应用于超级电容领域。本文探讨了K-Cu-S三元体系准一维纳米结构的液相可控合成,并系统表征了其电学、光电特性。具体研究工作如下：1、以N a2S·9H2O为硫源,CuCl为铜源,通过混合碱液法(NaOH和KOH的混合物,Na/K原子比为48.5：51.5),在165℃下成功合成了单斜晶系KCu3S2微米带。SEM分析表明产物长约30～60μm,宽为500nm～1nm,厚为200～500 nm。通过对其紫外-可见吸收光谱、光致发光谱、外光电子能谱分析得到KCu3S2纳米带禁带宽度为1.62 eV。电学测试表明产物KCu3S2微米带电导率约为～1.85×103 S cm-1,基于单根KCu3S2微米带的底栅型场效应器件表明KCu3S2微米带的导电类型为n型。2、在SiO2衬底上,构筑了KCu3S2/Au特基结。Ⅰ-Ⅴ测试表明该肖特基结具有较好的整流特性,整流比在102～103之间。在光功率为3.5 mW cm-2的白光光照下,该肖特基结具有很强的敏感度,开关比50,响应速度0.5s,上述良好性能说明KCu3S2微米带有望用作较高性能的白光探测器。3、以Na2S-9H2O为硫源,CuC12为铜源,通过混合碱液法(NaOH和KOH的混合物,Na/K原子比为48.5：51.5),在80℃下成功合成了四方晶相结构KCu7S4微米带。SEM分析表明产物长约30～60μm,宽为100 nm～0.3μm,厚为50～80nm。电学测试测试表明产物KCu7S4微米带电导率约为～6.85×102 S cm-1,基于单根KCu7S4微米带的底栅型场效应器件表明KCu7S4微米带导电类型为p型。
[Abstract]:Metal Sulfide Nanomaterials with excellent photoelectric properties as solar energy conversion, photoelectric devices, and other cutting-edge research hotspot in the field of catalysis. The Cu-S system successfully doped Cu-S system, effectively change the crystal structure and optical properties, will help expand the sulfide nano materials in the research of nano optoelectronics application.K-Cu-S system is three yuan one of the most important copper sulfate compounds, according to the content of K+ is incorporated into the Cu-S lattice system is different, with different number of copper ions, copper atoms in different positions, the formation of three yuan of sulfide with different structure and exhibit different properties, such as KCu7S4 has a quasi one-dimensional structure showed abnormal phase change temperature and resistance, can be used in the field of super capacitor. This paper discusses the K-Cu-S three element system of quasi one-dimensional nanostructures of liquid phase controlled synthesis, and characterization of the electrical system, the photoelectric characteristics of concrete. The research work is as follows: 1, with N a2S 9H2O as sulfur source, CuCl as copper source, through the mixed alkali (a mixture of NaOH and KOH, Na/K atomic ratio is 48.5:51.5), under the temperature of 165 DEG C successfully synthesized monoclinic KCu3S2 microbelts.SEM analysis showed that the product was about 30 ~ 60 m, width 500nm ~ 1nm, thickness of 200 ~ 500 nm. by the UV Vis absorption spectra, photoluminescence spectra, and X-ray photoelectron spectroscopy to obtain KCu3S2 nano with band gap of 1.62 eV. electrical test showed that the product was about KCu3S2 micron charged by ~ 1.85 x 103 S cm-1 bottom gate type single KCu3S2 microbelts the field effect devices show that the conductive type KCu3S2 microbelts based on N.2, on the SiO2 substrate, build KCu3S2/Au Schottky junction. The I-V tests show that it has better characteristics of Schottky rectifier, rectifier ratio from 102 to 103. To light power of 3.5 mW cm-2 Bai Guangguang, the Shaw Schottky junction has a strong sensitivity of the switch 50, the response speed of 0.5s, the good performance of KCu3S2 with.3 as detector at the micron white high performance, using Na2S-9H2O as sulfur source, CuC12 as copper source, through the mixed alkali (a mixture of NaOH and KOH, Na/K atomic ratio is 48.5:51.5), in 80 C synthesis of tetragonal phase KCu7S4 microbelts.SEM analysis showed that the product was about 30 ~ 60 m, width of 100 nm ~ 0.3 m, thickness 50 ~ 80nm. electrical test showed that the product was about KCu7S4 micron charged by ~ 6.85 x 102 S cm-1 bottom gate type single KCu7S4 microbelts the field effect devices show that the conductive type KCu7S4 microbelts is based on P type.

【学位授予单位】：合肥工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.1

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