氟掺杂氧化锡薄膜的制备及其电学性能的研究

发布时间：2018-02-25 00:15

本文关键词： F掺杂SnO2晶体 FTO导电薄膜导电能透光性　出处：《哈尔滨理工大学》2015年硕士论文　论文类型：学位论文

【摘要】：透明导电薄膜由于其优良的透光性能与导电性能，一直是研究的热点，目前生产研究最多的透明导电薄膜是金属氧化物薄膜，以SnO2为导电基础材料的导电薄膜多种多样，其中以ITO(Indium Tin Oxide)、FTO(Fluorine-doped TinOxide)、ATO(Antimony Tin Oxide)应用最为广泛，而FTO因其价格低廉，性能优越，制备工艺简单在导电薄膜领域一直属于应用比较广泛的薄膜，特别是在电化学领域。本文采用溶胶水热法并热处理后，成功的制备了F掺杂SnO2导电薄膜。通过讨论晶型转变温度及合理掺杂温度以确定最优的制备条件。文章讨论了溶胶的浓度、F/Sn等因素对导电薄膜电学光学性能的影响。测试表征手段包括X射线衍射仪、扫描电镜、透射电镜、紫外可见分光光度计、傅里叶红外测试仪、差热及热重分析仪、霍尔效应测试仪等。测试结果显示，溶胶凝胶法制备的F掺杂SnO2晶体颗粒尺寸为纳米级，晶粒尺寸在10nm左右。F离子的掺杂对SnO2晶体有轻微的影响，通过X射线衍射、透射电镜、红外等等测试分析掺杂前后的变化。匀胶法生成的薄膜表面平整，连续性好，没有明显的缺陷，薄膜与玻璃之间结合良好，薄膜厚度在3μm左右。霍尔测试显示载流子浓度随着F掺杂量的增加而增加，迁移率的变化趋势与载流子浓度趋势相反，显示下降趋势，当F/Sn比为0.8时，，导电薄膜的表面电阻达到最低值，为185/□。当F/Sn比为0.1时，透光性显示最优，可达到90%。透明导电薄膜性能指数ΦTC值，显示了集导电性能和透光性能一身的综合性能表征，ΦTC值显示，当F/Sn比为0.2时，ΦTC值最大，达2.23×10-4，表明综合性能最优。结合重掺杂理论，分析发现，满足透明导电薄膜的最优条件时，其薄膜掺杂浓度属于重掺杂简并半导体范畴，简并半导体具有高载流子浓度，低电阻等特点。
[Abstract]:Transparent conductive thin films have been the focus of research because of their excellent transmittance and conductive properties. At present, the most widely studied transparent conductive films are metal oxide films, and the conductive films based on SnO2 are varied. Among them, ITO(Indium TinOxide, FTO(Fluorine-doped TinOxide-antimony TinOxide is the most widely used, and FTO has been widely used in the field of conducting film, especially in the electrochemical field, because of its low price and superior performance. In this paper, sol-hydrothermal method and heat treatment were used. F doped SnO2 conductive thin films were successfully prepared. The optimum preparation conditions were determined by discussing the crystal transition temperature and the reasonable doping temperature. The influence of sol concentration, F / Sn and other factors on the electrical and optical properties of the conductive thin films was discussed in this paper. Response. Means of characterization include X-ray diffractometer, Scanning electron microscope, transmission electron microscope, ultraviolet visible spectrophotometer, Fourier infrared tester, differential thermal and thermogravimetric analyzer, Hall effect tester, etc. The results show that the size of F-doped SnO2 crystals prepared by sol-gel method is nanocrystalline, and the doping of F-ions at about 10nm has a slight influence on SnO2 crystals, which is characterized by X-ray diffraction and transmission electron microscopy. Infrared and so on test and analyze the change before and after doping. The film formed by the uniform glue method has a smooth surface, good continuity, no obvious defects, and a good bond between the film and the glass. The thickness of the film is about 3 渭 m. Hall test shows that the carrier concentration increases with the increase of F doping content, and the change trend of mobility is opposite to that of carrier concentration, showing a downward trend, when the F / Sn ratio is 0.8. The surface resistance of the conductive film reaches the lowest value, that is, 18.5%. When the F / Sn ratio is 0.1, the transparency of the film can reach 90%. The transparent conductive film has a performance index 桅 TC, which shows the comprehensive properties of both the conductivity and the transmittance, and the 桅 TC value shows that, When the F / Sn ratio is 0.2, the 桅 TC value is the largest, reaching 2.23 脳 10 ~ (-4), which indicates that the comprehensive performance is the best. Combining with the heavy doping theory, it is found that the doping concentration of the thin film belongs to the category of heavily doped degenerate semiconductors when the optimum condition of transparent conductive film is satisfied. Degenerate semiconductors are characterized by high carrier concentration and low resistance.
【学位授予单位】：哈尔滨理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2;O614.432

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