磁控溅射法低温制备Al膜工艺参数的优化

发布时间：2018-03-31 12:19

本文选题：磁控溅射　切入点：铝膜　出处：《微纳电子技术》2017年12期

【摘要】：以高纯度铝作为溅射靶材,高纯度氩气作为溅射气体,在低温环境下利用直流磁控溅射设备在硅衬底上成功制备了铝膜。通过单一因素控制法研究了溅射功率、腔室压强和基片转速三个关键因素对铝膜的均匀性、致密性和附着性的影响。采用台阶仪、扫描电子显微镜(SEM)等测试设备以及磷酸腐蚀速率法、胶带法等测试方法对铝膜质量进行了表征与分析,得出了不同工艺参数与铝膜的均匀性、致密性和附着性的关系,并且对结果进行了优化。实验结果表明:溅射功率和腔室压强影响铝膜的均匀性、致密性和附着性;基片转速影响铝膜的均匀性和附着性,并得到了各因素对铝膜质量的影响趋势及影响机理。最终得到制备铝膜的最优工艺参数为溅射功率300 W、腔室压强3.7×10-3 Torr(1 Torr=133.3 Pa)、基片转速6 r/min。
[Abstract]:Aluminum films were successfully prepared on silicon substrates by DC magnetron sputtering under low temperature using high purity aluminum as target material and argon gas as sputtering gas. Sputtering power was studied by single factor control method. The influence of three key factors of chamber pressure and substrate speed on the uniformity, compactness and adhesion of aluminum film was investigated by means of step tester, scanning electron microscope (SEM) and phosphoric acid corrosion rate method. The quality of aluminum film was characterized and analyzed by tape method, and the relationship between different technological parameters and uniformity, compactness and adhesion of aluminum film was obtained. The experimental results show that sputtering power and chamber pressure affect the uniformity, compactness and adhesion of aluminum film, and the rotational speed of substrate affects the uniformity and adhesion of aluminum film. The influence trend and mechanism of various factors on the quality of aluminum film were obtained. Finally, the optimum technological parameters were obtained as follows: sputtering power 300W, chamber pressure 3.7 脳 10-3 Torr(1 Torr=133.3 Paan, substrate speed 6 r / min.
【作者单位】：中北大学仪器科学与动态测试教育部重点实验室;中北大学电子测试技术重点实验室;北方自动控制技术研究所;
【基金】：国家杰出青年科学基金资助项目(51425505)
【分类号】：TB383.2;TG146.21

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