异形构件化学气相沉积SiC涂层的数值模拟

发布时间：2018-04-02 23:36

本文选题：SiC涂层　切入点：化学气相沉积　出处：《固体火箭技术》2017年02期

【摘要】：根据化学气相沉积(CVD)工艺制备SiC陶瓷涂层的工艺特点和典型异形构件的结构特点,建立了异形构件表面化学气相沉积SiC涂层的数学模型。利用该模型,对CVD法在典型异形表面制备SiC涂层进行了数值计算和分析。计算结果显示,带有斜面的构件对CVD SiC沉积过程有显著影响,在反应器大小允许的情况下,构件放置时,斜面与水平面的夹角越小越好,并尽可能将构件长的一面与水平面平行,这样有利于沉积的涂层均匀。此外,对于带有台阶的构件来说,正放的构件表面浓度大于倒放的构件,而浓度梯度则小于倒放的构件。因此,在实际应用中,应尽量使台阶部分放在气流的下游。上述研究结果对CVD工艺制备SiC涂层的优化具有一定的指导意义。
[Abstract]:According to the process characteristics of SiC ceramic coating and the structural characteristics of typical special-shaped components, a mathematical model of chemical vapor deposition (SiC) coating on the surface of special-shaped components was established.Using this model, the numerical calculation and analysis of SiC coating on typical special-shaped surface by CVD method were carried out.The calculation results show that the CVD SiC deposition process is significantly affected by the components with inclined plane. When the reactor size is allowed, the smaller the angle between the inclined plane and the horizontal plane is, the better the angle between the inclined plane and the horizontal plane is.The long side of the component is parallel to the horizontal plane as much as possible.In addition, for the members with steps, the surface concentration of the components being placed is higher than that of the members placed back, while the gradient of concentration is smaller than that of the members placed back.Therefore, in practical application, step part should be placed downstream of air flow as far as possible.The above results have certain guiding significance for the optimization of SiC coating prepared by CVD process.
【作者单位】：长安大学材料科学与工程学院;西北工业大学材料学院凝固技术国家重点实验室;
【基金】：国家自然科学基金(51402024,51402023) 中央高校基本科研业务费专项资金(310831152020,310831151081) 陕西省自然科学基金(2014JQ6212,2014JQ6217) 西北工业大学凝固技术国家重点实验室博士后基金(12-BZ-2014)
【分类号】：TB306

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