旋涂法制备的PMMA薄膜的电学特性和光学特性的研究

发布时间：2018-04-03 20:21

本文选题：聚甲基丙烯酸甲酯(PMMA)　切入点：有机栅介质　出处：《大连理工大学》2015年硕士论文

【摘要】：随着微电子技术的高速发展,各个领域的微电子器件对材料的性能要求也不断提高,有机薄膜晶体管(OTFT)作为一种新兴的微电子器件,以其低廉的成本和良好的性能拥有巨大的市场价值。对于OTFT,影响器件性能的不仅是半导体材料,作为介质层的绝缘材料的作用也是非常重要的。与无机绝缘材料相比,低生产成本而且更适合柔性衬底的有机绝缘材料更适用于新一代平板显示中。聚甲基丙烯酸甲酯(PMMA)就是能够应用于OTFT生产的绝缘透明薄膜材料之一本文基于金属-氧化层-半导体(MOS)结构基本特性来研究PMMA薄膜的电学特性,采用旋涂的方法分别在N型硅和ITO玻璃衬底上制备一层聚甲基丙烯酸甲酯(PMMA),分别制备成金属-绝缘层-半导体结构(MIS)和金属-绝缘层-导电薄膜结构(MIM)。通过X射线衍射谱验证了PMMA的无定型非晶本质；由金相显微镜观察PMMA薄膜表面形貌,发现热退火会对其有一定的影响；分别对两种结构进行了电容-电压(C-V)测试和电流-电压(I-V)测试,研究PMMA薄膜的介电特性和击穿场强,得到与二氧化硅接近的相对介电常数(3.99)；随着C-V测量频率由5KHz升到2MHz,PMMA相对介电常数在不断减小；由于衬底表面质量的不同,基于MIS结构测得击穿场强为3.2MV/cm,而由MIM结构得到的为5.8 MV/cm。由紫外可见吸收光谱仪得到PMMA/ITO玻璃结构的透射率可到80%以上,PMMA薄膜对350nm-500nm范围的光具有增透作用。
[Abstract]:With the rapid development of microelectronic technology, the performance requirements of microelectronic devices in various fields have been improved. Organic thin film transistor (OTFT) is a new kind of microelectronic devices.With its low cost and good performance has huge market value.For OTFT, it is not only the semiconductor material that affects the performance of the device, but also the function of the insulating material as the dielectric layer.Compared with inorganic insulating materials, organic insulating materials with low production cost and more suitable for flexible substrates are more suitable for the new generation flat panel display.Poly (methyl methacrylate) (PMMA) is one of the insulating and transparent thin film materials which can be used in OTFT production. In this paper, the electrical properties of PMMA thin films are studied based on the basic structural characteristics of metal-oxidation-semiconductor MOSs.A layer of polymethyl methacrylate (PMMA) was prepared on N-type silicon and ITO glass substrates by spin-coating method, and the metal-insulation-semiconductor structure and metal-insulation-conductive thin film structure were prepared respectively.The amorphous nature of PMMA was verified by X-ray diffraction, and the surface morphology of PMMA film was observed by metallographic microscope, and it was found that thermal annealing had a certain effect on it.The dielectric properties and breakdown field strength of PMMA thin films were investigated by capacitance-voltage C-V (C-V) and current-voltage I-V (I-V) measurements, respectively.The transmittance of PMMA/ITO glass structure was obtained by UV-Vis absorption spectrometer, and the transmittance of the glass structure can reach more than 80%, which has antireflection effect on the light in the range of 350nm-500nm.
【学位授予单位】：大连理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2

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