Zn掺杂CdO薄膜的溅射法制备和光电性能研究

发布时间：2018-04-27 04:29

本文选题：CdO + ZnO　；参考：《表面技术》2017年10期

【摘要】：目的通过向CdO薄膜中掺杂ZnO,在尽量不影响其电学性质的前提下,拓宽禁带宽度并改善性能。方法通过磁控射频溅射分别在玻璃基底和硅111基底上沉积了一系列Cd_(1-x)Zn_xO透明导电薄膜。利用XRD、紫外可见分光光度计和霍尔效应测量仪,测试了薄膜的结构、光学和电学性能。结果随着Zn掺杂含量的增加,薄膜结构会发生变化:x0.25时,薄膜结果为岩盐相;0.25x0.5时,薄膜结构为混合相;x0.5时,薄膜结构变成了纤锌矿相。掺杂Zn后,薄膜吸收边可以提升到3eV左右,同时其电阻率为6.69×10~(-4)?·cm,载流子浓度为7.92×10~(20) cm~(-3),与纯CdO薄膜电学性质相近。结论对CdO薄膜进行一定量的ZnO掺杂,可以在不影响其电学性质的前提下提高禁带宽度,从而使薄膜具有良好的光电性能。
[Abstract]:Aim to broaden the band gap and improve the properties of CdO films by doping ZnO into the films without affecting their electrical properties as much as possible. Methods A series of Cd_(1-x)Zn_xO transparent conductive films were deposited on glass substrates and Si 111 substrates by magnetron RF sputtering. The structure, optical and electrical properties of the films were measured by XRD, UV-Vis spectrophotometer and Hall effect measuring instrument. Results with the increase of Zn doping content, the structure of the thin film will change when the content of Zn is increased, the structure of the film will change to wurtzite phase when the structure of the film is 0.25 x 0.5 in the rock salt phase, and the structure of the film is mixed phase x 0.5. After doping Zn, the absorption edge of the thin film can be raised to about 3eV, and its resistivity is 6.69 脳 10 ~ (-1) -4? cm, and the carrier concentration is 7.92 脳 10 ~ (-1) ~ (20) cm ~ (-3), which is similar to the electrical properties of pure CdO thin film. Conclusion the doping of ZnO into CdO thin films can increase the band gap without affecting the electrical properties of the films, thus making the films have good photoelectric properties.
【作者单位】：中国科学技术大学物理学院物理实验教学中心;
【基金】：国家基础科学人才培养基金项目(J1103207) 国家自然科学基金项目(51602302)~~
【分类号】：TB383.2

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