室温下射频溅射制备AZO薄膜及其性能研究

发布时间：2018-05-01 23:40

本文选题：室温 + 射频溅射　；参考：《武汉理工大学》2015年硕士论文

【摘要】：同ITO薄膜相比,铝掺杂氧化锌(AZO)薄膜由于具有可以媲美的光电性能,并且其具有原材料丰富、制备成本低、性价比高、无毒害作用、环境稳定性好、便于后期加工等优点,可以广泛应用于平板显示器、薄膜太阳能电池等重要领域,大有在未来取代ITO薄膜在透明导电薄膜领域地位的趋势。近几十年来,关于AZO薄膜的制备工艺以及性能优化的研究,国内外的研究者已经做了大量的工作,同时也取得了很多成果。磁控溅射法具有操作简单、工艺稳定、镀膜均匀等突出优点,是制备AZO薄膜最常用和最成熟的方法。但是,在大多数关于用磁控溅射法制备AZO薄膜的报道中,沉积AZO薄膜都是要在高温下进行的,即在镀膜时要对基片加热,或者是在镀膜过程结束后对样品进行退火处理。如此一来,就限制了薄膜在柔性衬底和某些敏感的光阻材料等不能耐受高温的材料上的应用。鉴于此,本论文对室温下采用磁控溅射法制备AZO薄膜进行了研究。采用射频溅射,使用Al掺杂量为2 wt%的AZO陶瓷靶材,普通载玻片作为基片,在室温下制备AZO薄膜样品。研究了多组参数对薄膜性能的影响,并引入性能指数作为衡量薄膜光电综合性能的指标。同时,提出了在基片和膜层之间使用SiO2薄膜作为缓冲层,对引入缓冲层前后样品的性能进行了对比,得出结论如下:(1)在本论文所述的实验条件下,所制备的AZO薄膜结晶性能良好,样品中的晶粒都是在(002)面择优取向生长的;(2)经过各组样品的性能比对,得出的制备AZO薄膜的最佳工艺参数为:溅射功率300 W,工作气压0.25 Pa,沉积时间30 min。在最佳参数下沉积的薄膜,晶粒尺寸较大、结构完整,方块电阻为27.98?/□,可见光波段的平均透过率大于80%,性能指数ΦTC为4.32×10-3?-1;(3)引入SiO2缓冲层可以大幅度地提高AZO薄膜的电学性能。所制备的薄膜样品相较于直接在载玻片上镀膜,其方块电阻值都大幅度减小。使用合适厚度SiO2薄膜作为缓冲层,可以减少薄膜中的残余应力,还可以起到阻碍基片中的Na+进入到膜层中的作用,保证晶格的完整性,使薄膜的结晶性得到改善,晶粒尺寸变大。当缓冲层的厚度为30 nm时,薄膜的方块电阻值为14.12?/□,可见光的平均透过率接近82%,与直接在载玻片上沉积相比透过率变化很小,电阻率为9.6×10-4?.cm,计算所得的性能指数值为9.56×10-3?-1,该值已经优于室温下沉积的ITO薄膜。
[Abstract]:Compared with ITO thin films, aluminum doped zinc oxide (AZO) thin films have many advantages, such as abundant raw materials, low preparation cost, high cost performance, no toxicity, good environmental stability and easy processing. It can be widely used in many important fields, such as flat panel display, thin film solar cell and so on. It has a tendency to replace ITO film in transparent conductive film field in the future. In recent decades, researchers at home and abroad have done a lot of research on the preparation process and performance optimization of AZO films, and have also achieved a lot of results. Magnetron sputtering has the advantages of simple operation, stable process and uniform coating. It is the most common and mature method for the preparation of AZO thin films. However, in most of the reports on the preparation of AZO films by magnetron sputtering, the deposition of AZO films is carried out at high temperature, that is, the substrate should be heated or the samples should be annealed at the end of the coating process. This limits the application of thin films to materials that cannot withstand high temperature, such as flexible substrates and some sensitive photoresistive materials. In this paper, AZO thin films were prepared by magnetron sputtering at room temperature. AZO thin films were prepared at room temperature by RF sputtering using AZO ceramic target with Al doping content of 2 wt% and ordinary glass slide as substrate. The effect of multi-group parameters on the properties of the films was studied, and the performance index was introduced as the index to evaluate the photoelectric properties of the films. At the same time, using SiO2 film as buffer layer between substrate and film, the properties of samples before and after the introduction of buffer layer are compared. The conclusion is as follows: 1) under the experimental conditions described in this paper, The crystalline properties of the prepared AZO thin films are good. The optimum process parameters of AZO thin films were obtained as follows: sputtering power 300W, working pressure 0.25 Pa, deposition time 30 min. The films deposited under the optimum parameters have large grain size and complete structure, the square resistance is 27.98 / -, the average transmittance of visible light band is greater than 80, and the performance index 桅 TC is 4.32 脳 10 ~ (-3) -1 ~ (-1) the electrical properties of AZO thin films can be greatly improved by introducing SiO2 buffer layer. Compared with the direct coating on the glass slide, the sheet resistance of the prepared thin film samples is greatly reduced. Using appropriate thickness of SiO2 thin film as buffer layer can reduce the residual stress in the film, prevent Na in substrate from entering into the film, ensure the integrity of crystal lattice, and improve the crystallinity of the film. The grain size increases. When the thickness of the buffer layer is 30 nm, the square resistance of the film is 14.12 / -, and the average transmittance of visible light is close to 82. The resistivity is 9.6 脳 10 ~ (-4) 路cm, and the calculated performance index is 9.56 脳 10 ~ (-3) ~ (-1), which is better than that of ITO films deposited at room temperature.
【学位授予单位】：武汉理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2

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