PVDF薄膜的制备及热释电单元器件研究

发布时间：2018-06-24 05:14

本文选题：太赫兹探测器 + PVDF薄膜　；参考：《电子科技大学》2015年硕士论文

【摘要】：聚偏氟乙烯(PVDF)是一种优秀的聚合物热释电材料,PVDF薄膜型的热释电探测器具有性价比高、体积小的优点,且制备工艺简单、可进行大规模生产。这使PVDF材料成为商用及军用的热门材料制备热释电探测器。本文对PVDF薄膜型太赫兹热释电单元器件的研究,采用旋涂法制备PVDF薄膜,并针对其热释电系数较小的缺点,提出一种掺杂Mg(NO3)2.6H2O的新方法提高PVDF薄膜β晶相的含量,从而得到高热释电性能的PVDF薄膜,同时测试了PVDF薄膜和Mg(NO3)2.6H2O复合薄膜的介电、铁电、热释电性能,并制备出单元器件,搭建测试平台,测试单元器件性能。研究PVDF薄膜制备工艺及介电、铁电、热释电性能。研究不同溶剂对薄膜红外光谱的影响,退火工艺对PVDF薄膜表面形貌的影响,不同衬底材料(Al和FTO)和测试温度对PVDF薄膜介电、漏电性能的影响。测试了极化后PVDF薄膜的电滞回线、漏电流和热释电系数。测试得到PVDF的漏电流为1.5×10-8A、剩余极化强度Pr=0.65μC/cm2、矫顽电场Ec=39v/μm、热释电系数p=8.7×10-10C/Kcm2。通过溶液法得到PVDF薄膜仅含有少量的β晶相,具有较低的热释电性能,本文提出一种掺杂Mg(NO3)2.6H2O的新方法,得到具有高β晶相的PVDF/Mg(NO3)2.6H2O复合薄膜,并对其表面形貌、红外光谱、介电、漏电、铁电、热释电性能进行研究。测试得到在1KHz条件下PVDF/Mg(NO3)2.6H2O复合薄膜的相对介电常数为10.8、介电损耗为0.05、漏电流为-1.28×10-10A、剩余极化强度Pr=1.22μC/cm2、矫顽电场Ec=50v/μm、热释电系数p=6.3×10-9 C?cm-2?K-1,计算出电压响应优值Fv=2.3×10-10C?cm?J-1、探测优值Fd=4.3×10-9C?cm?J-1。通过本实验制备的PVDF/Mg(NO3)2.6H2O复合材料具有优秀的热释电性能。研究PVDF薄膜的太赫兹热释电探测单元的制备工艺,制备出平面的结构的PVDF热释电单元探测器。并根据实验室条件自行搭建的太赫兹测试系统分别对PVDF薄膜和PVDF/Mg(NO3)2.6H2O薄膜的热释电单元探测器进行测试。
[Abstract]:Polyvinylidene fluoride (PVDF) is an excellent polymer pyroelectric material PVDF thin film pyroelectric detector has the advantages of high cost performance small volume and simple preparation process can be large-scale production. This makes PVDF materials become a hot material for commercial and military applications to prepare pyroelectric detectors. In this paper, a novel method of doping mg (no _ 3) _ 2 路6H _ 2O into PVDF thin films is proposed to increase the 尾 -phase content of PVDF films. The PVDF thin films are prepared by spin coating method. The pyroelectric coefficient of PVDF thin films is small, and a new method of doping mg (no _ 3) _ (2. 6H _ 2O) is put forward to improve the 尾 -phase content of PVDF films. The dielectric, ferroelectric and pyroelectric properties of PVDF film and mg (no 3) 2.6H 2O composite film were measured. The preparation process and dielectric, ferroelectric and pyroelectric properties of PVDF films were studied. The effects of different solvents on the infrared spectra of PVDF films, the effects of annealing process on the surface morphology of PVDF films, and the effects of different substrate materials (Al and FTO) and testing temperature on the dielectric and leakage properties of PVDF films were studied. The hysteresis loop leakage current and pyroelectric coefficient of polarized PVDF films were measured. The results show that the leakage current of PVDF is 1.5 脳 10 ~ (-8) A, the residual polarization intensity is 0.65 渭 C / cm ~ (2), the coercive electric field is 39 v / 渭 m, and the pyroelectric coefficient (p _ (8.7) 脳 10 ~ (-10) C / m ~ (2). PVDF thin films have only a small amount of 尾 crystalline phase and have low pyroelectric properties. A new method of doping mg (no 3) 2.6H 2O is proposed in this paper. PVDF / mg (no 3) 2.6H 2O composite thin films with high 尾 crystalline phase are obtained. The surface morphology, infrared spectra, dielectric properties of PVDF / mg (No3) 2.6H2O composite thin films are obtained. Leakage, ferroelectricity, pyroelectric properties were studied. The relative dielectric constant, dielectric loss and leakage current of PVDF / mg (no _ 3) _ 2 路6H _ 2O composite films were 10.8, -1.28 脳 10 ~ (-10) A, -1.28 脳 10 ~ (-10) A, pr _ (1.22) 渭 C / cm ~ (2), EC ~ (50) V / 渭 m, and P6.3 脳 10 ~ (-9) C ~ (10 ~ (-9) C ~ (-2) C ~ (-2) K ~ (-1), respectively, at 1kHz. The optimal voltage response of PVDF / mg (no _ 3) _ 2 路6H _ 2O composite films was calculated. The optimum value of detection was 4.3 脳 10 ~ (-9) C ~ (-1) C ~ (-1) cm ~ (-1) ~ (-1). PVDF / mg (no _ 3) _ 2 路6H _ 2O composites prepared by this experiment have excellent pyroelectric properties. The preparation process of terahertz pyroelectric detector for PVDF thin films was studied and the planar structure PVDF pyroelectric unit detector was prepared. The pyroelectric unit detectors of PVDF films and PVDF / mg (No3) 2.6H2O thin films were tested by a terahertz test system based on laboratory conditions.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2

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