自极化铁酸铋薄膜电滞回线和极化稳定性研究
[Abstract]:Ferroelectric thin films have potential applications in piezoelectric and pyroelectric microelectronic devices. In order to achieve excellent device performance, ferroelectric thin films must be polarized first. If the film is self-polarized, the fabrication cost of the device will be significantly reduced. In recent years, improving the stability of self-polarization of ferroelectric thin films has been a hot topic in the field of ferroelectricity. The traditional commercial ferroelectric testing system is still insufficient in characterizing self-polarized ferroelectric thin films. The measured results at low voltage do not reflect the true polarization state of the self-polarized films. In this paper, the calibration problem of hysteresis loop, the evaluation of self-polarization stability and the improvement of self-polarization stability are studied systematically. BiFeO3 thin films with self-polarization were prepared by sol-gel method. According to the saturation state of hysteresis loop, a reasonable calibration method for low voltage loop is proposed. The effect of delay time on the gap size of loop is studied to determine the shortest delay time for obtaining full ferroelectric domain backswitching. The effect of voltage measurement sequence on hysteresis loop and the effect of internal defects on the distribution and self-polarization stability of the film after high voltage measurement were studied. The hysteresis loop of the capacitor after high voltage test for 20 minutes and one day later is compared and analyzed. The influence of the direction of prepolarization voltage on the hysteresis loop is studied. The self-polarization stability is analyzed according to the change of coercive voltage and gap size. The relationship between the self-polarization stability and the direction of prepolarization voltage is explained from the point of view of defect chemistry. Based on the results of data analysis, a reasonable method to improve the stability of self-polarized films is proposed. A defect gradient structure is proposed to further improve the piezoelectric and pyroelectric properties of self-polarized films. In this paper, the changes of the initial state of the self-polarized thin film by high voltage during the measurement of hysteretic loop are reasonably utilized, and the performance of the self-polarized film at high and low voltage is compared and studied. It lays a theoretical and experimental foundation for the research and development of piezoelectric and pyroelectric devices.
【学位授予单位】:吉林大学
【学位级别】:硕士
【学位授予年份】:2015
【分类号】:TB383.2
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