柔性基底石墨烯基复合透明导电薄膜的制备及CIAS刮刀涂布法试制

发布时间：2018-11-07 07:36

【摘要】：聚酰亚胺(PI)/石墨烯不仅有着远远优越于ITO的透光和导电性能,而且可弯曲。但恰是由于石墨烯只有单层或几层碳原子构成,通常制备的石墨烯薄膜易脱落、方阻高。本实验制备PI/石墨烯基复合透明导电薄膜,希望保证复合薄膜良好光电性能,同时保护石墨烯膜层。实验采用射频、直流和脉冲直流电源溅射Mo粉末靶,改变靶基距(靶到基体的距离),测量基体漂移电压及饱和电流,探讨溅射驱动方式及靶基距对等离子体行为的影响,并根据实验结果后续薄膜的制备选取130mm的靶基距,ZnO薄膜的制备分别采用射频及脉冲直流电源(占空比选75%、频率为100KHZ)。Ag薄膜的制备采用脉冲电源(占空比选80%、频率为100KHZ)Ag靶采用直流电源。并通过台阶仪、XRD-衍射仪、原子力显微镜、扫描电子显微镜、霍尔效应仪及紫外-可见分光光度计对制备的薄膜样品进行表征。使用射频和脉冲直流电源制备的PI/石墨烯/Zn O复合薄膜,在石墨烯上ZnO为柱状晶生长,晶粒择优取向为(002)。并随功率的增加,薄膜厚度增加,表面颗粒趋于平整。复合薄膜在可见光区透光率均达到72%以上,方阻均大于石墨烯方阻,但由于膜厚的增加电阻率显著升高。因此,需要通过其他手段提高薄膜的电学性能。金属夹层可以提高TCO复合薄膜的电学性能。采用脉冲磁控溅射制备PI/石墨烯/Ag复合薄膜,并讨论不同Ag层薄膜厚度PI/石墨烯/Ag复合薄膜的光电性能,光电性能最佳的样品方阻为5.36Ω/sq可见光区平均透光率64%。为了进一步提高透光率,并保护表层的Ag薄膜,在最优PI/石墨烯/Ag上沉积120nm厚的ZnO薄膜,制备PI/石墨烯/Ag/ZnO复合薄膜,制备样品方阻为989Ω/sq,可见光区平均透光率为62%。实验成功使用墨水法和刮刀涂布法制备了CuInAlSe2太阳电池吸收薄膜,为CuInAlSe2太阳电池吸收薄膜提供一种新的制备方法。并通过自定的热处理工艺极大的降低了薄膜中有机的残留。
[Abstract]:Polyimide (PI) / graphene not only has much better transmittance and conductive properties than ITO, but also can bend. However, because graphene is composed of a single layer or several layers of carbon atoms, the graphene film is easy to fall off and the square resistance is high. In this experiment, PI/ graphene based composite transparent conductive thin films were prepared in order to ensure the good photoelectric properties of the composite films and to protect the graphene film layer at the same time. RF, DC and pulse DC power sources were used to sputtering Mo powder target. The distance between the target and the substrate was changed. The drift voltage and saturation current of the substrate were measured, and the effect of the sputtering driving mode and the distance between the target and the substrate on the plasma behavior was discussed. According to the experimental results, the target distance of 130mm was selected according to the results of the experiment. The ZnO thin films were prepared by RF and pulsed DC power supply (75 duty cycle, 75 duty cycle, 80 duty cycle, respectively). The frequency is 100KHZ) Ag target uses DC power supply. The films were characterized by step analyzer, XRD- diffractometer, atomic force microscope, scanning electron microscope, Hall effect instrument and UV-Vis spectrophotometer. The PI/ graphene / Zn O composite thin films prepared by RF and pulsed DC power supply were grown on graphene with columnar crystal, and the preferred orientation was (002). With the increase of power, the film thickness increases and the surface particles tend to be flat. The transmittance of the composite films in the visible region is over 72%, and the square resistance is larger than that of graphene, but the resistivity increases obviously due to the increase of film thickness. Therefore, the electrical properties of the films need to be improved by other means. Metal interlayer can improve the electrical properties of TCO composite films. PI/ graphene / Ag composite films were prepared by pulsed magnetron sputtering. The optoelectronic properties of PI/ graphene / Ag composite films with different Ag film thickness were discussed. The square resistance of the sample with the best optoelectronic properties is 5.36 惟 / sq and the average transmittance is 64 in the visible region. In order to further improve the transmittance and protect the surface Ag film, the 120nm thick ZnO film was deposited on the optimal PI/ graphene / Ag substrate, and the PI/ graphene / Ag/ZnO composite film was prepared. The square resistance of the sample was 989 惟 / sq,. The average transmittance in the visible region is 62. The absorption film of CuInAlSe2 solar cell was successfully prepared by ink method and scraper coating method, which provides a new preparation method for CuInAlSe2 solar cell absorption film. The organic residue in the film was greatly reduced by self-determined heat treatment.
【学位授予单位】：辽宁科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2

【参考文献】