基于傅里叶级数的改进型IGCT物理模型

发布时间：2018-02-10 06:01

本文关键词： 集成门极换流晶闸管双极输运方程注入状态傅里叶级数法空间电荷区压降　出处：《高电压技术》2017年07期 　论文类型：期刊论文

【摘要】：研究集成门极换流晶闸管(IGCT)高精度模型建模方法,有助于深入分析IGCT运行特性、提高含IGCT变流器的整体性能。为此,建立了基于傅里叶级数法的改进型IGCT物理模型,根据IGCT运行特性考虑了N基区非耗尽区注入状态的变化,且针对不同注入状态将描述该区域载流子分布特性的双极输运方程(ATE)加以简化,并运用傅里叶级数法求解,提高了关断暂态拖尾电流精度。利用动态承压系数计算N基区空间电荷区压降,确保电流可靠关断的同时,提高了关断暂态电压精度。同时,N缓冲层和P基区分别采用准静态法与电荷控制法描述载流子分布情况,建立了改进的IGCT物理模型。通过改进模型与现有模型仿真结果及实验结果的对比,验证了该建模方法的正确性和模型的有效性。
[Abstract]:The research of integrated gate converter thyristor high precision model modeling method is helpful to analyze the operation characteristics of IGCT and improve the overall performance of IGCT converter. Therefore, an improved IGCT physical model based on Fourier series method is established. According to the operation characteristics of IGCT, the variation of injection state in the N-base region is considered, and the bipolar transport equation describing the distribution of carriers in this region is simplified for different injection states, and the Fourier series method is used to solve the equation. The accuracy of turn-off transient trailing current is improved, and the voltage drop in space charge region of N-base region is calculated by using dynamic pressure bearing coefficient, which ensures the reliable turn-off of current at the same time. The accuracy of turn-off transient voltage is improved. At the same time, quasi static method and charge control method are used to describe the carrier distribution in N buffer layer and P base area, respectively. The improved IGCT physical model is established, and the correctness and validity of the model are verified by comparing the simulation results and experimental results of the improved model with that of the existing model.
【作者单位】：中国科学院大学;中国科学院电工研究所;
【分类号】：TM46;TN34

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