相变区纳米硅氧薄膜的微观结构及光学特性

发布时间：2018-03-17 03:03

本文选题：纳米硅氧薄膜　切入点：相变区　出处：《光学精密工程》2017年04期 　论文类型：期刊论文

【摘要】：为了研究硅异质结太阳电池中纳米硅氧薄膜的光电特性,采用甚高频等离子体增强化学气相沉积技术制备了一系列不同晶态比例的nc-SiOx∶H薄膜,利用拉曼散射光谱(Raman)、傅里叶变换红外光谱(FTIR)、紫外可见透射光谱以及稳/瞬态光致发光谱等检测手段分别对薄膜的微观结构、键合配置,能带特征以及发光特性进行了表征。薄膜结构特征分析显示,随着氧掺入量的增加,薄膜由微晶向非晶转化,光学带隙逐渐增加,而处在相变区(晶化度约为10%,nc-Si尺寸约为3nm)的薄膜具有较高的中程有序度、较小的结构因子和较为致密的微观结构。薄膜稳/瞬态光致发光结果显示,一定量的氧掺入可以钝化缺陷、增强发光,而相变区薄膜的发光强度最大,表明较小尺寸的nc-Si具有较强的量子限制效应,nc-Si的量子限制效应发光是主要的载流子复合机制。
[Abstract]:In order to study the photoelectric properties of nanocrystalline SiO2 thin films in silicon heterojunction solar cells, a series of nc-SiOx:H thin films with different crystalline ratios were prepared by VHF plasma enhanced chemical vapor deposition (VHP-CVD). Raman scattering spectra, Fourier transform infrared spectroscopy (FTIR), UV-Vis transmission spectra and stable / transient photoluminescence spectra were used to determine the microstructure and bonding configuration of the films. The structure characteristics of the films were characterized by band characteristics and luminescence characteristics. It was found that with the increase of oxygen doping, the thin films changed from microcrystalline to amorphous, and the optical band gap increased gradually. However, the thin films in the phase transition region (the crystallinity is about 10% and the size of nc-Si is about 3 nm) have higher intermediate order, smaller structure factor and denser microstructure. The results of stable / transient photoluminescence show that, A certain amount of oxygen doping can passivate the defects and enhance the luminescence, while the luminescence intensity of the phase change region film is the largest, which indicates that the smaller size nc-Si has a strong quantum confinement effect and the quantum confinement effect of nc-Si is the main carrier recombination mechanism.
【作者单位】：河北大学物理科学与技术学院;中国乐凯集团有限公司研究院;
【基金】：国家自然科学基金青年基金资助项目(No.61504036) 河北省自然科学基金青年基金资助项目(No.A2016201087) 河北省高等学校科学研究指导项目(No.Z2015121) 河北省科技计划项目(No.13214315) 教育部博士点基金项目(No.20131301120003) 河北省高等学校科技研究项目(No.QN20131115)
【分类号】：TM914.41

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