锆酸铅薄膜电容器的储能行为及其应用研究

发布时间：2018-04-12 13:39

  本文选题：反铁电薄膜 + 离子掺杂　； 参考：《南京邮电大学》2016年硕士论文

【摘要】：反铁电材料由于其在现代高新技术中起着越来越重要的作用而成为国内外研究的热点,而具有复合钙钛矿结构的PbZrO_3基反铁电材料是一类最有发展潜力的反铁电材料。其中,掺杂离子的PbZrO_3基反铁电薄膜电容的制备工艺及其储能性能,具有重要的理论意义和应用价值。本论文采用化学溶液沉积法(CSD)结合快速热处理工艺(RTA)制备锆酸铅(PbZrO_3,PZO)基反铁电薄膜,研究了这类薄膜材料的掺杂改性、相变、反铁电、介电、储能等性能。采用化学溶液沉积法结合快速热处理工艺在Pt/Ti/SiO_2/Si衬底上制备了不同Pr~(3+)离子含量Pb_(1-1.5x)Pr_xZrO_3(PPrZ)薄膜,研究了Pr~(3+)离子含量对薄膜形貌结构、能量存储和介电性质的影响。经过600℃快速热处理后的PPrZ薄膜呈伪立方相钙钛矿结构,PPrZ薄膜表面致密,无裂纹。不同浓度的Pr~(3+)离子的掺杂对PbZrO_3反铁电薄膜的电学性能影响巨大,通过改变离子浓度可以得到不同储电性能的锆酸铅薄膜样品。研究表明,适量Pr~(3+)离子的掺杂可以有效增强PbZrO_3反铁电薄膜的电学性能。论文最后主要分析了新型储能电容器在高密度储能电容器领域在军事方面、混合动力车辆、生物医学、物联网底层传感网节点上潜在的应用。重点介绍了PbZrO_3反铁电薄膜电容器在为物联网底层传感网节点供电上的应用。论文结尾对全文进行总结,并对进一步实验提出改进方案。本论文研究工作还有很大的改进空间,可以通过改变实验条件,得到性能更优的锆酸铅反铁电薄膜电容器。
[Abstract]:Antiferroelectric materials have become a hot research topic at home and abroad due to their more and more important role in modern high and new technology. PbZrO_3 based antiferroelectric materials with composite perovskite structure are the most promising antiferroelectric materials.Among them, the preparation process and energy storage performance of the doped PbZrO_3 based antiferroelectric thin film capacitors have important theoretical significance and application value.In this paper, PbZrO3PZO) based antiferroelectric thin films were prepared by chemical solution deposition method (CSD) and rapid heat treatment (RTA). The doping modification, phase transition, antiferroelectricity, dielectric and energy storage properties of PbZrO3PZO) based films were studied.Different Pr~(3) ion contents were prepared on Pt/Ti/SiO_2/Si substrates by chemical solution deposition and rapid heat treatment. The effects of Pr~(3) ion content on the morphology, energy storage and dielectric properties of the films were investigated.After rapid heat treatment at 600 鈩，

本文编号：1739982