倒置平面异质结钙钛矿太阳能电池功能层的可控制备及其机理研究

发布时间：2018-04-12 13:48

  本文选题：钙钛矿太阳能电池 + 成膜工艺　； 参考：《深圳大学》2017年硕士论文

【摘要】：有机-无机卤化物钙钛矿太阳能电池具有低成本、制备工艺简单、高效率等特点,在最近的几年时间里得到广泛的研究与快速的发展,目前光电转换效率已经突破22%。器件能量转换效率的快速攀升,本质上是钙钛矿薄膜质量不断提高和器件结构持续优化的结果。本文使用倒装p-i-n平面异质结结构为模型(如图1-14所示),分别探索空穴传输层、钙钛矿薄膜和电子传输层的制备工艺,期望调控各功能层的结构属性,提高器件光伏性能。主要内容具体如下:1、改进MAPb I3在空气环境下的制备工艺。通过在烘烤过程增加DMSO的溶剂氛围,并系统研究DMSO氛围的浓度、DMSO氛围退火时间长度与时间点对成膜质量的影响。结果表明:在晶体生长的前10分钟使用1.5 mg/cm3 DMSO氛围浓度进行氛围退火处理,然后在空气中再退火20分钟使钙钛矿晶体进行重结晶生长,可控制备致密无针孔、平整度高、结晶性好的高质量MAPb I3多晶薄膜,器件转换效率从11.9%提升为15.7%。另外,我们研究了钙钛矿薄膜的结晶机理,证实溶剂氛围对薄膜表面的破坏性,从而提出在结晶末段无溶剂氛围烘烤处理的必要性。2、空穴收集层poly-TPD的成膜工艺探索与机理研究。鉴于poly-TPD导电率不高,器件性能对其厚度敏感的情况,我们研究了poly-TPD溶液浓度对器件性能的影响。研究发现,现有方法制备的poly-TPD薄膜平整度差,器件性能重复性不强。本论文提出在热基底上旋涂poly-TPD薄膜的制备工艺,通过增大基底表面能,极大改善poly-TPD薄膜质量,提高了poly-TPD薄膜有效覆盖率,并明显提高薄膜的平整度,因此器件光电转换效率由14.87%提高到18.60%,并且性能重复性大大提高。3、改进电子传输层PC_(61)BM的制备工艺。我们将热基底制备工艺也运用到电子传输层PC_(61)BM,解决其粘附性差导致薄膜覆盖率低、平整度差的问题。结果表明,制备PC_(61)BM的基底温度为60℃时可以得到得到均匀平整、无孔洞的表面形貌,最终器件的转换效率可以达到19.16%。这是因为,提高电子传输层的薄膜质量,能有效的降低钙钛矿的表面缺陷、阻止载流子在钙钛矿与电极界面处的复合,因此可以提高载流子的抽取与传输效率。
[Abstract]:The organic-inorganic halide perovskite solar cells have the characteristics of low cost, simple preparation process and high efficiency. They have been widely studied and developed rapidly in recent years. At present, the photoelectric conversion efficiency has exceeded 22%.The rapid increase of energy conversion efficiency is essentially the result of continuous improvement of perovskite film quality and continuous optimization of device structure.In this paper, the inverted p-i-n plane heterojunction structure is used as a model (as shown in figure 1-14) to explore the fabrication process of hole transport layer, perovskite film and electron transport layer, respectively, in order to regulate the structural properties of each functional layer and improve the photovoltaic performance of the device.The main contents are as follows: 1: 1, improving the preparation process of MAPb I 3 in air environment.By increasing the solvent atmosphere of DMSO during baking, the effects of the concentration of DMSO atmosphere and the annealing time and time point on the film forming quality were studied systematically.The results show that the perovskite crystal is recrystallized by annealing in the first 10 minutes of the crystal growth at the concentration of 1.5 mg/cm3 DMSO, and then recrystallized in the air for 20 minutes.The conversion efficiency of high quality MAPb I _ 3 polycrystalline films with good crystallinity is increased from 11.9% to 15.7%.In addition, we have studied the crystallization mechanism of perovskite film and confirmed the destruction of solvent atmosphere on the surface of the film. Therefore, the necessity of baking in solvent-free atmosphere at the end of crystallization, and the study of film forming process and mechanism of hole collection layer (poly-TPD) were put forward.In view of the fact that the conductivity of poly-TPD is not high and the device performance is sensitive to its thickness, we have studied the effect of the concentration of poly-TPD solution on the performance of the device.It is found that the poly-TPD films prepared by the existing methods have poor smoothness and low repeatability.In this paper, the preparation process of poly-TPD thin films on hot substrates is proposed. By increasing the surface energy of poly-TPD films, the quality of poly-TPD films is greatly improved, the effective coverage of poly-TPD films is increased, and the smoothness of poly-TPD thin films is obviously improved.Therefore, the photoelectric conversion efficiency of the device is increased from 14.87% to 18.60%, and the repeatability of the device is greatly improved. 3. The fabrication process of PC_(61)BM is improved.We also apply the thermal substrate preparation process to the electronic transport layer PCS 61BMM to solve the problem of low film coverage and poor flatness due to its poor adhesion.The results show that when the substrate temperature of PC_(61)BM is 60 鈩，

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