大功率电力电子器件相变冷却技术的实验研究

发布时间：2018-04-18 05:36

  本文选题：冷却结构 + 相变冷却　； 参考：《电测与仪表》2017年22期

【摘要】：大功率电力电子器件的冷却散热问题,已成为集成化大电容发展的瓶颈,受到越来越广泛的关注。文中采用相变冷却技术,设计两种冷板:带有强化换热结构和非强化换热结构,用于绝缘栅双极型晶体管模块(Insulated Gate Bipolar Transistor IGBT)散热,对两种冷板温度分布进行数值模拟,并利用自建的实验平台对两种冷板的性能进行模拟试验。结果表明:两种结构的冷板均能满足功率器件的结温要求,同功率条件下,带有强化换热结构的冷板温度更低,具有更好的均温性,在3 000 W和4 000 W功率下,冷板温度分别为56.6℃和59.5℃,为系统结构设计提供指导。
[Abstract]:The cooling and heat dissipation of high-power power electronic devices has become the bottleneck of the development of integrated large capacitors, and has attracted more and more attention.In this paper, two kinds of cooling plates are designed by using phase change cooling technology: one is with enhanced heat transfer structure and the other is with unstrengthened heat transfer structure, which is used for insulating gate bipolar transistor module insulated Gate Bipolar Transistor IGBT, and the temperature distributions of two kinds of cold plates are numerically simulated.The performance of two kinds of cold plates was simulated by using the self-built experimental platform.The results show that the chilled plates with both structures can meet the junction temperature requirements of power devices. Under the same power condition, the temperature of the chilled plates with enhanced heat transfer structures is lower and has better homogenization, and at the power of 3 000 W and 4 000 W, the temperature of the cold plates with the enhanced heat transfer structure is lower.The temperature of cold plate is 56.6 鈩，

本文编号：1767049