基于SiC MOSFET的低压交流伺服驱动器的研究
发布时间：2019-01-05 15:29
【摘要】：随着社会发展,以永磁同步电机为控制对象的交流伺服系统在人们的日常生活、工业生产和国防建设等领域日益得到广泛的应用。然而,一些需要在野外作业的情况下,无法为伺服系统提供高压交流电源,只能以24V直流蓄电池作为电源。当采用低压电源供电时,交流伺服系统就会出现压降大、损耗高、体积增大等问题。相比于传统SiIGBT,新型SiCMOSFET具有开关频率高、通态压降低、损耗小、工作温度高等优点。本文以SiC MOSFET功率模块代替IGBT功率模块展开研究,以克服低压交流伺服系统压降大、损耗高的技术难点。尤其是高开关频率时,采用SiC MOSFET设计低压交流伺服系统损耗方面的优势更明显,对于进一步研究高性能低压交流伺服系统具有现实意义和应用价值。首先,介绍了 SiC MOSFET的结构及特点,建立了 SiC MOSFET的功能模型并进行仿真,分析了 SiC MOSFET的开关特性、管压降和开关损耗,从理论上得出SiC MOSFET的管压降和开关损耗都低于同功率等级的IGBT,开关频率越高时,SiC MOSFET和IGBT的开关损耗差距越大。其次,分析了主回路的工作原理,分别以SiC MOSFET和IGBT仿真模型搭建了主回路,以SPWM信号为触发信号,以正弦波为调制波,进行了主回路工作过程中管压降和损耗的仿真,通过仿真结果的对比分析,证明了 SiC MOSFET设计的主回路管压降和损耗更低,尤其是在高开关频率时,SiC MOSFET设计的主回路损耗方面的优势更明显,更适合低压交流伺服驱动器的应用。最后,以TMS320F2812为控制核心,分别以CREE公司的CCS050M12CM2型号SiC MOSFET功率模块和三菱公司的PM100RLA120型号IGBT功率模块为主回路设计了低压交流伺服驱动器的软硬件,搭建了低压交流伺服驱动器的实验平台。利用搭建的实验平台,对基于两种功率模块设计的伺服驱动器进行了通态压降和损耗方面的测试,实验结果再次证明了基于SiC MOSFET设计的低压交流伺服驱动器通态压降和损耗均低于基于IGBT设计的低压交流伺服驱动器,尤其是在高开关频率时,基于SiC MOSFET设计的低压交流伺服驱动器损耗方面的优势更明显,对于提高低压伺服驱动器的电压利用率,缩小低压伺服驱动器的体积,提高低压伺服驱动器的功率密度很有意义。
[Abstract]:With the development of society, the AC servo system with permanent magnet synchronous motor (PMSM) as the control object has been widely used in people's daily life, industrial production and national defense construction. However, some need to work in the field, the servo system can not provide high voltage AC power supply, can only use 24V DC battery as the power supply. When using low voltage power supply, AC servo system will have the problems of high voltage drop, high loss and increasing volume. Compared with the traditional SiIGBT, SiCMOSFET, the new SiCMOSFET has the advantages of high switching frequency, low on-state voltage, low loss and high operating temperature. In this paper, SiC MOSFET power module is used instead of IGBT power module to overcome the technical difficulties of high voltage drop and high loss in low voltage AC servo system. Especially at high switching frequency, the loss of low voltage AC servo system designed by SiC MOSFET is more obvious, which has practical significance and application value for further research on high performance low voltage AC servo system. Firstly, the structure and characteristics of SiC MOSFET are introduced, the functional model of SiC MOSFET is established and simulated, and the switching characteristics, voltage drop and switching loss of SiC MOSFET are analyzed. Theoretically, it is concluded that the higher the switching frequency of SiC MOSFET, the bigger the gap between, SiC MOSFET and IGBT when the voltage drop and switching loss of, SiC MOSFET are lower than those of IGBT, with the same power level. Secondly, the working principle of the main loop is analyzed. The main circuit is built with the SiC MOSFET and IGBT simulation models, the SPWM signal is used as the trigger signal and the sinusoidal wave is used as the modulation wave to simulate the tube pressure drop and loss during the main circuit operation. Through the comparison and analysis of the simulation results, it is proved that the voltage drop and loss of the main loop designed by SiC MOSFET are lower, especially the advantages of the main circuit loss designed by, SiC MOSFET at high switching frequency are more obvious. It is more suitable for the application of low voltage AC servo driver. Finally, the hardware and software of the low voltage AC servo driver are designed with TMS320F2812 as the control core, CREE's CCS050M12CM2 model SiC MOSFET power module and Mitsubishi's PM100RLA120 IGBT power module as the main loop. The experiment platform of low voltage AC servo driver is built. The on-state pressure drop and loss of the servo driver based on two kinds of power modules are tested by using the experimental platform. The experimental results show that the on-state voltage drop and loss of the low-voltage AC servo driver based on SiC MOSFET are lower than those of the low-voltage AC servo driver based on IGBT, especially at high switching frequency. The loss of low voltage AC servo driver based on SiC MOSFET is more obvious, which is significant for improving the voltage utilization ratio of low voltage servo driver, reducing the volume of low voltage servo driver and increasing the power density of low voltage servo driver.
【学位授予单位】：冶金自动化研究设计院
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TM921.541;TN386
[Abstract]:With the development of society, the AC servo system with permanent magnet synchronous motor (PMSM) as the control object has been widely used in people's daily life, industrial production and national defense construction. However, some need to work in the field, the servo system can not provide high voltage AC power supply, can only use 24V DC battery as the power supply. When using low voltage power supply, AC servo system will have the problems of high voltage drop, high loss and increasing volume. Compared with the traditional SiIGBT, SiCMOSFET, the new SiCMOSFET has the advantages of high switching frequency, low on-state voltage, low loss and high operating temperature. In this paper, SiC MOSFET power module is used instead of IGBT power module to overcome the technical difficulties of high voltage drop and high loss in low voltage AC servo system. Especially at high switching frequency, the loss of low voltage AC servo system designed by SiC MOSFET is more obvious, which has practical significance and application value for further research on high performance low voltage AC servo system. Firstly, the structure and characteristics of SiC MOSFET are introduced, the functional model of SiC MOSFET is established and simulated, and the switching characteristics, voltage drop and switching loss of SiC MOSFET are analyzed. Theoretically, it is concluded that the higher the switching frequency of SiC MOSFET, the bigger the gap between, SiC MOSFET and IGBT when the voltage drop and switching loss of, SiC MOSFET are lower than those of IGBT, with the same power level. Secondly, the working principle of the main loop is analyzed. The main circuit is built with the SiC MOSFET and IGBT simulation models, the SPWM signal is used as the trigger signal and the sinusoidal wave is used as the modulation wave to simulate the tube pressure drop and loss during the main circuit operation. Through the comparison and analysis of the simulation results, it is proved that the voltage drop and loss of the main loop designed by SiC MOSFET are lower, especially the advantages of the main circuit loss designed by, SiC MOSFET at high switching frequency are more obvious. It is more suitable for the application of low voltage AC servo driver. Finally, the hardware and software of the low voltage AC servo driver are designed with TMS320F2812 as the control core, CREE's CCS050M12CM2 model SiC MOSFET power module and Mitsubishi's PM100RLA120 IGBT power module as the main loop. The experiment platform of low voltage AC servo driver is built. The on-state pressure drop and loss of the servo driver based on two kinds of power modules are tested by using the experimental platform. The experimental results show that the on-state voltage drop and loss of the low-voltage AC servo driver based on SiC MOSFET are lower than those of the low-voltage AC servo driver based on IGBT, especially at high switching frequency. The loss of low voltage AC servo driver based on SiC MOSFET is more obvious, which is significant for improving the voltage utilization ratio of low voltage servo driver, reducing the volume of low voltage servo driver and increasing the power density of low voltage servo driver.
【学位授予单位】：冶金自动化研究设计院
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TM921.541;TN386
【参考文献】
相关期刊论文 前10条
1 何亮;刘扬;;第三代半导体GaN功率开关器件的发展现状及面临的挑战[J];电源学报;2016年04期
2 刘仿;肖岚;;SiC MOSFET开关特性及驱动电路的设计[J];电力电子技术;2016年06期
3 梁美;郑琼林;可，
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