透明电极在有机太阳能电池中的优化与研究
发布时间：2019-06-28 10:37
【摘要】：传统半导体硅太阳能电池由于制备成本高昂且制备过程造成环境污染,促使科研人员把目光瞄准有机太阳能电池(OSCs)领域。有机太阳能电池的原材料丰富、制备工艺简单、卷对卷、可大面积制备等,与传统的硅太阳能电池相比,有难以比拟的优势。但是,与无机太阳能电池相比,OSCs的光电转化效率依然偏低。为了提高器件的光电转化效率(PCE),通常把研究重点放在太阳能光子的吸收效率方面。一种方法是增加活性层的厚度。另外的解决办法是通过制造一个半透明的OSCs器件和有不同光谱响应的其他太阳能电池组装。在此种情况下,我们可以最大化的利用入射的太阳光。同时,半透明的有机太阳能电池(OSCs)可以应用于特定的生活化场景,例如具有光电转化功能的窗户等。基于此想法,本文通过采用阴阳极都为透明电极的结构,制备高效的基于PTB7:PC_(70)BM结构的半透明有机太阳能电池器件。本论文的主要研究内容如下:1、为了制备出高效的有机太阳能电池,首先在玻璃基底上优化银透明电极的性能与制备参数之间的关系,包括:引入成核诱导物、采用钽舟热蒸发沉积薄膜、改变银沉积速率以及银薄膜的厚度。结果表面,通过引入成核诱导物MoO_3后,银薄膜的导通临界值从11 nm以上下降到7 nm,此时沉积速率为0.9 nm/s,对应的表面电阻为39.41±8.51 ohm/sq。此外,随着银的沉积速率的逐渐增加,银薄膜的光学和电学性能逐步趋于良好,当蒸镀速率达到0.7 nm/s以上,薄膜性能趋于稳定,性能提升不大。当银薄膜的厚度达到9nm时,薄膜可见光波谱范围内(400-760nm)的平均透光率为74.22%±2%,高于其他薄膜厚度在此光波谱范围内的平均透光率,此时对应的表面电阻为19.68±1.77ohm/sq。2、在半透明器件中,首先优化透明阳极银薄膜的厚度。结果表明,当银薄膜的厚度为9nm时,其光学和电学性质达到最佳妥协结果。此时,光从银透明电极入射时,效率可到2.76%(V_(oc)=0.72v,J_(sc)=7.47ma/cm~2,ff=51%,R_s=23.42Ω*cm~2,R_(sh)=873.40Ω*cm~2);光从ito入射时,效率可达3.94%(V_(oc)=0.74v,J_(sc)=8.67ma/cm~2,FF=62%,R_s=11.11Ω*cm~2,R_(sh)=904.65Ω*cm~2);光从银薄膜电极入射的效率低于从ito入射的效率,这是由于二者的透光性不同导致的结果。3、为了进一步改善薄膜的透射率,在透明电极的最外层覆盖上不同厚度的MoO_3,形成MoO_3/ag/MoO_3多层结构的透明电极,其中内层较薄MoO_3(2nm)作为空穴缓冲层和成核诱导物,外层较厚MoO_3(≥10nm)作为光耦合层提高透明电极的透射。另外,电极最外层覆盖一定厚度的MoO_3可避免超薄银层的氧化,避免电极氧化导致器件效率的衰减。通过优化9nm银薄膜的PTB7:Pc_(70)bm电池器件,当覆盖层MoO_3的厚度为20nm时,器件的效率最优。此时,光从MoO_3/ag/MoO_3多层结构的透明电极入射时,效率可达3.62%(V_(oc)=0.73v,J_(sc)=8.00ma/cm~2,ff=62%,R_s=10.74Ω*cm~2,R_(sh)=1254.55Ω*cm~2);光从ito入射时,效率可达3.95%(V_(oc)=0.72v,J_(sc)=8.53ma/cm~2,FF=64%,R_s=10.20Ω*cm~2,R_(sh)=1246.11Ω*cm~2)。结果表明,用MoO_3/ag/MoO_3作透明电极应用于器件中,有效的改善了器件的效率和稳定性。
[Abstract]:In that traditional semiconductor silicon solar cell, due to the high preparation cost and environmental pollution caused by the preparation process, the scientific researcher is promote to aim at the field of organic solar cell (OSCs). The organic solar cell has the advantages of rich raw material, simple preparation process, volume-to-volume, large-area preparation and the like, and has the advantages of being difficult to compare with the traditional silicon solar cell. However, the photoelectric conversion efficiency of the OSCs is still low as compared to the inorganic solar cell. In order to improve the photoelectric conversion efficiency (PCE) of the device, the focus of the study is focused on the absorption efficiency of the solar photons. One method is to increase the thickness of the active layer. A further solution is by the manufacture of a semi-transparent osss device and other solar cell assemblies with different spectral responses. In this case, we can maximize the use of incident sunlight. At the same time, a translucent organic solar cell (OSCs) can be applied to a particular raw activation scene, such as a window with a photoelectric conversion function, and the like. Based on this idea, a transparent organic solar cell device based on PTB7: PC _ (70) BM is prepared by using the structure of both the anode and the cathode as the transparent electrode. The main research contents of this thesis are as follows:1. In order to prepare an efficient organic solar cell, the relationship between the performance of the silver transparent electrode and the preparation parameters is firstly optimized on the glass substrate, The silver deposition rate and the thickness of the silver film were varied. As a result, after the nucleation inducer MoO _ 3 was introduced, the conduction critical value of the silver film decreased from above 11 nm to 7 nm, at which time the deposition rate was 0.9 nm/ s and the corresponding surface resistance was 39.41 and 8.51 ohm/ sq. In addition, as the deposition rate of the silver gradually increases, the optical and electrical properties of the silver film tend to be good, and when the vapor deposition rate reaches above 0.7 nm/ s, the film performance is stable and the performance is not improved. when the thickness of the silver film reaches 9 nm, the average light transmittance of the thin film visible light spectrum range (400-760 nm) is 74.22% or 2%, and the average light transmittance of the other thin film thickness in the light wave spectrum range is higher than the average light transmittance of the other thin film thickness in the light wave spectrum range, and the corresponding surface resistance is 19.68-1.77 ohm/ sq.2, The thickness of the transparent anode silver film is first optimized. The results show that when the thickness of the silver film is 9 nm, the optical and electrical properties of the silver film reach the best compromise result. At this time, when the light is incident from the silver transparent electrode, the efficiency can be 2.76% (V _ (c) = 0.72v, J _ (sc) = 7.47ma/ cm ~ 2, ff = 51%, R _ s = 23.42 惟 * cm ~ 2, R _ (sh) = 873.40惟 * cm ~ 2); when the light is incident from the ito, the efficiency can reach 3.94% (V _ (c) = 0.74v, J _ (sc) = 8.67ma/ cm ~ 2, FF = 62%, R _ s = 11.11惟 * cm ~ 2, R _ (sh) = 904.65惟 * cm ~ 2); the efficiency of light incident from the silver thin-film electrode is lower than the efficiency from the ITO, in order to further improve the transmittance of the thin film, MoO _ 3 of different thickness is covered on the outermost layer of the transparent electrode to form a transparent electrode of the MoO _ 3/ ag/ MoO _ 3 multilayer structure, wherein the inner layer is thinner MoO _ 3 (2 nm) as a hole buffer layer and a nucleation inducer, The outer layer of thick MoO _ 3 (about 10 nm) is used as the light-coupling layer to improve the transmission of the transparent electrode. In addition, MoO _ 3 with a certain thickness on the outermost layer of the electrode can avoid the oxidation of the ultra-thin silver layer, and avoid the attenuation of the device efficiency due to the oxidation of the electrode. By optimizing the PTB7: Pc _ (70) bm cell device of the 9 nm silver film, the efficiency of the device is optimal when the thickness of the cover layer MoO _ 3 is 20 nm. At this time, the efficiency can reach 3.62% (V _ (c) = 0.73v, J _ (sc) = 8.00 ma/ cm ~ 2, ff = 62%, R _ s = 10.74惟 * cm ~ 2, R _ (sh) = 1254.55 惟 * cm ~ 2) when the transparent electrode of the MoO _ 3/ ag/ MoO _ 3 multi-layer structure is incident; when the light is incident from the ito, the efficiency can reach 3.95% (V _ (c) = 0.72v, J _ (sc) = 8.53 ma/ cm ~ 2, FF = 64%, R _ s = 10.20 惟 * cm ~ 2, R _ (sh) = 1246.11惟 * cm ~ 2). The results show that MoO _ 3/ ag/ MoO _ 3 is used as a transparent electrode to improve the efficiency and stability of the device.
【学位授予单位】：太原理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TM914.4
，
本文编号：2507233
[Abstract]:In that traditional semiconductor silicon solar cell, due to the high preparation cost and environmental pollution caused by the preparation process, the scientific researcher is promote to aim at the field of organic solar cell (OSCs). The organic solar cell has the advantages of rich raw material, simple preparation process, volume-to-volume, large-area preparation and the like, and has the advantages of being difficult to compare with the traditional silicon solar cell. However, the photoelectric conversion efficiency of the OSCs is still low as compared to the inorganic solar cell. In order to improve the photoelectric conversion efficiency (PCE) of the device, the focus of the study is focused on the absorption efficiency of the solar photons. One method is to increase the thickness of the active layer. A further solution is by the manufacture of a semi-transparent osss device and other solar cell assemblies with different spectral responses. In this case, we can maximize the use of incident sunlight. At the same time, a translucent organic solar cell (OSCs) can be applied to a particular raw activation scene, such as a window with a photoelectric conversion function, and the like. Based on this idea, a transparent organic solar cell device based on PTB7: PC _ (70) BM is prepared by using the structure of both the anode and the cathode as the transparent electrode. The main research contents of this thesis are as follows:1. In order to prepare an efficient organic solar cell, the relationship between the performance of the silver transparent electrode and the preparation parameters is firstly optimized on the glass substrate, The silver deposition rate and the thickness of the silver film were varied. As a result, after the nucleation inducer MoO _ 3 was introduced, the conduction critical value of the silver film decreased from above 11 nm to 7 nm, at which time the deposition rate was 0.9 nm/ s and the corresponding surface resistance was 39.41 and 8.51 ohm/ sq. In addition, as the deposition rate of the silver gradually increases, the optical and electrical properties of the silver film tend to be good, and when the vapor deposition rate reaches above 0.7 nm/ s, the film performance is stable and the performance is not improved. when the thickness of the silver film reaches 9 nm, the average light transmittance of the thin film visible light spectrum range (400-760 nm) is 74.22% or 2%, and the average light transmittance of the other thin film thickness in the light wave spectrum range is higher than the average light transmittance of the other thin film thickness in the light wave spectrum range, and the corresponding surface resistance is 19.68-1.77 ohm/ sq.2, The thickness of the transparent anode silver film is first optimized. The results show that when the thickness of the silver film is 9 nm, the optical and electrical properties of the silver film reach the best compromise result. At this time, when the light is incident from the silver transparent electrode, the efficiency can be 2.76% (V _ (c) = 0.72v, J _ (sc) = 7.47ma/ cm ~ 2, ff = 51%, R _ s = 23.42 惟 * cm ~ 2, R _ (sh) = 873.40惟 * cm ~ 2); when the light is incident from the ito, the efficiency can reach 3.94% (V _ (c) = 0.74v, J _ (sc) = 8.67ma/ cm ~ 2, FF = 62%, R _ s = 11.11惟 * cm ~ 2, R _ (sh) = 904.65惟 * cm ~ 2); the efficiency of light incident from the silver thin-film electrode is lower than the efficiency from the ITO, in order to further improve the transmittance of the thin film, MoO _ 3 of different thickness is covered on the outermost layer of the transparent electrode to form a transparent electrode of the MoO _ 3/ ag/ MoO _ 3 multilayer structure, wherein the inner layer is thinner MoO _ 3 (2 nm) as a hole buffer layer and a nucleation inducer, The outer layer of thick MoO _ 3 (about 10 nm) is used as the light-coupling layer to improve the transmission of the transparent electrode. In addition, MoO _ 3 with a certain thickness on the outermost layer of the electrode can avoid the oxidation of the ultra-thin silver layer, and avoid the attenuation of the device efficiency due to the oxidation of the electrode. By optimizing the PTB7: Pc _ (70) bm cell device of the 9 nm silver film, the efficiency of the device is optimal when the thickness of the cover layer MoO _ 3 is 20 nm. At this time, the efficiency can reach 3.62% (V _ (c) = 0.73v, J _ (sc) = 8.00 ma/ cm ~ 2, ff = 62%, R _ s = 10.74惟 * cm ~ 2, R _ (sh) = 1254.55 惟 * cm ~ 2) when the transparent electrode of the MoO _ 3/ ag/ MoO _ 3 multi-layer structure is incident; when the light is incident from the ito, the efficiency can reach 3.95% (V _ (c) = 0.72v, J _ (sc) = 8.53 ma/ cm ~ 2, FF = 64%, R _ s = 10.20 惟 * cm ~ 2, R _ (sh) = 1246.11惟 * cm ~ 2). The results show that MoO _ 3/ ag/ MoO _ 3 is used as a transparent electrode to improve the efficiency and stability of the device.
【学位授予单位】：太原理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TM914.4
，
本文编号：2507233
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