质子、电子及其综合辐照作用下单晶硅太阳电池损伤效应

发布时间：2018-02-01 21:33

本文关键词： 空间环境单晶硅太阳电池综合辐照　出处：《哈尔滨工业大学》2014年硕士论文　论文类型：学位论文

【摘要】：本文使用单晶硅单结太阳电池，利用空间环境综合模拟设备，针对空间实际环境中的低能带电粒子辐照效应展开研究。主要涉及的空间辐照条件为能量小于200keV的质子及电子辐射、1MeV电子辐射和低能质子电子综合辐射作用。使用I-V性能测试，量子效率测试，少数载流子参数测试，二维倒易空间测试以及数值模拟等分析方法进行了损伤演化规律探讨与损伤机理分析。研究结果表明，能量为50keV、100keV以及170keV的低能质子辐照主要引起单晶硅太阳电池开路电压大幅下降以及短路电流小幅度下降，导致最大功率的大幅下降。测试分析结果表明：质子辐照在前表面、发射区以及PN结处产生大量的缺陷，形成了复合中心，提高了间接复合率；降低了太阳电池对穿透能力较弱的短波光谱的吸收效率，导致量子效率在短波部分出现小幅度下降；由于大量复合中心的存在导致反向饱和电流增加，引起开路电压下降；同时导致少子寿命、少子扩散长度降低，前表面复合率升高。能量为50keV、100keV以及170keV的低能电子辐照主要引起单晶硅太阳电池短路电流下降以及开路电压小幅度下降，导致最大功率产生衰降。测试分析结果表明：电子辐照穿过前表面、发射区及PN结进入基区；对于单晶硅太阳电池整体结构发生作用，产生陷阱缺陷，从而导致量子效率整体有小幅度衰减；少子寿命、少子扩散长度出现小幅的下降，前表面复合率小幅度上升。能量为1MeV电子辐照主要引起单晶硅太阳电池开路电压以及短路电流大幅下降，，导致最大功率也出现大幅下降。测试分析结果表明：1MeV电子辐照穿过前表面、发射区、PN结以及基区，作用于单晶硅太阳电池所有结构；粒子辐照在基区产生大量的缺陷，降低了太阳电池对穿透能力较强的长波光谱的吸收效率，导致单晶硅太阳电池量子效率长波部分出现明显衰减；少子寿命、少子扩散长度明显降低，前表面复合率大幅升高。质子、电子综合辐照前后，单晶硅太阳电池开路电压以及短路电流发生衰减，导致最大功率产生下降。量子效率短波段部分、少子寿命以及少子扩散长度出现一定程度的下降，前表面复合率升高。共同辐照条件下以上各参数的变化幅度大于顺序辐照条件下各参数变化幅度，并且先电子后质子条件时各参数变化幅度略大于先质子后电子条件。
[Abstract]:In this paper, the monocrystalline silicon single junction solar cell is used, and the space environment comprehensive simulation equipment is used. The radiation effects of low energy charged particles in space environment are studied. The main conditions of space irradiation are protons and electron radiation with energy less than 200keV. 1MeV electron radiation and low-energy proton electron radiation. I-V performance test, quantum efficiency test, minority carrier parameter measurement. Two dimensional reciprocal space test and numerical simulation were used to analyze the law of damage evolution and damage mechanism. The results show that the low energy proton irradiation with energy of 50 Kev or 100 Kev and 170 Kev mainly results in a sharp decrease in the open circuit voltage and a small decrease in the short circuit current of the single crystal silicon solar cell. The test results show that proton irradiation produces a large number of defects in the front surface, emission region and PN junction, forming a composite center and increasing the indirect recombination rate. The absorption efficiency of the solar cell to the shortwave spectrum with weak penetration ability is reduced, which leads to the decrease of quantum efficiency in the shortwave part. Due to the existence of a large number of recombination centers, the reverse saturation current increases and the open circuit voltage decreases. At the same time, the minority carrier lifetime, minority carrier diffusion length decreased, and the front surface recombination rate increased. Low energy electron irradiation with energy of 50 Kev or 100 Kev and 170 Kev mainly results in the decrease of short circuit current and open circuit voltage of monocrystalline silicon solar cells. The results show that the electron irradiation passes through the front surface, the emission region and the PN junction enter the base region. For the monocrystalline silicon solar cell, the whole structure of the cell acts, resulting in trap defects, resulting in the quantum efficiency of the whole has a small attenuation; The minority carrier lifetime, the diffusion length of minority carriers decreased slightly, and the recombination rate of the front surface increased slightly. The open circuit voltage and short circuit current of monocrystalline silicon solar cell are greatly decreased by 1 MeV electron irradiation. The test results show that: 1 MeV electron irradiates through the front surface, the emission region is PN junction and the base region, acting on all the structure of the single crystal silicon solar cell. Particle irradiation produces a large number of defects in the base region, which reduces the absorption efficiency of the solar cell to the long wave spectrum, which has a strong penetrability, and results in the apparent attenuation of the long wave part of the quantum efficiency of the single crystal silicon solar cell. The minority carrier lifetime, minority carrier diffusion length, and the front surface recombination rate increased significantly. The open-circuit voltage and short-circuit current of monocrystalline silicon solar cells attenuate before and after combined proton and electron irradiation, resulting in the decrease of maximum power and the short band quantum efficiency. The lifetime of minority carriers and the diffusion length of minority carriers decreased to a certain extent, and the recombination rate of front surface increased. The range of the above parameters under co-irradiation was larger than that under sequential irradiation. The variation amplitude of the parameters is a little larger than that of the first proton and then the electron condition.
【学位授予单位】：哈尔滨工业大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM914.41

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