忆阻器电学特性的模拟及在混沌系统中的应用研究

发布时间：2018-02-06 04:35

本文关键词： 忆阻器模拟器混沌状态控制细胞神经网络同步　出处：《湘潭大学》2014年博士论文　论文类型：学位论文

【摘要】：作为与电阻R，电感L和电容C并列的第四个基本电子元件，忆阻器建立了磁通量和电荷之间的关系，其阻值取决于流过电流的历史，因而忆阻器具有记忆功能。自惠普实验室物理成功实现忆阻器以来，其在非易失性存储器，计算机，人工神经网络和电路设计等领域的潜在应用价值引起了国内外学者的广泛关注。由于纳米技术存在实现困难、成本高等缺点，忆阻器现在还仅存在实验室环境中。忆阻器在短时间内不可能商品化，成为人们研究忆阻器及其应用的瓶颈，因而根据实际忆阻器的电学特性构建它的等效电路对分析和研究忆阻器构成的电路和系统具有重要意义和实用价值。此外，作为一种纳米尺寸的非线性动态元件，忆阻器非常适合用来实现混沌电路以产生高频的混沌信号。本文的研究工作主要集中在忆阻器电学特性的模拟等效和忆阻器在混沌系统中的应用，取得的研究成果如下： (1)以惠普忆阻器物理模型为基础，提出了一种电荷控制忆阻器模拟器，经Pspice仿真分析，，该模拟器的电学特性与惠普忆阻器的电学特性基本吻合，且提出的电路结构简单，采用的器件均为普通器件，非常适合实验环境下分析和研究忆阻器。由于记忆效应是纳米器件的一种普遍现象，在纳米尺寸下电容、电感也具有记忆特性，为了能模拟所有记忆器件的电学行为，我们实现了一个通用的记忆器件模拟器。该模拟器能在电路拓扑结构保持不变的情况下，能将接地的忆阻器转化为浮地忆阻器、浮地忆容器和浮地忆感器，具有良好的通用性。 (2)提出了一种忆阻器混沌电路的系统设计方法，认为忆阻器混沌电路可以由正弦波振荡网络、RC移相网络和忆阻器三部分构成，当选择不同的正弦波振荡器就可以得到不同的忆阻混沌电路，以二阶RC桥式振荡器和三阶双T带阻振荡器为例验证了该设计方法的有效性。 (3)由于现有的忆阻器混沌电路只能产生混沌信号，不能实现超混沌行为，本文以分段线性的磁控忆阻器替换MCK电路中的非线性电阻实现了一个超混沌电路。采用平衡点稳定性分析、李氏指数谱、分岔图和相图等常规的动力学分析方法研究了系统的动力学行为，并通过Pspice仿真实验验证了理论的正确性。 (4)此外，采用忆阻器实现了一个改进型的细胞神经网络单元，适当连接三个细胞单元可以将忆阻器混沌系统模型映射为细胞神经网络电路，从而为忆阻器混沌电路的设计提供了另外一种可供选择的方法。为实验研究电路的动力学行为，我们采用细胞神经单元实现了一个新的忆阻器模拟器。实验结果与数值仿真结果的一致性表明采用细胞神经网络能有效地实现忆阻器混沌电路。 (5)为了研究忆阻器混沌系统的同步问题，以提出的荷控忆阻器混沌系统为研究对象采用自适用同步方案实现了系统参数不确定情况下两个相同结构忆阻混沌系统的同步。并在自适应同步的基础上，我们采用参数调制技术构建了一个混沌保密通信系统，并通过数值仿真验证了该系统的可行性。
[Abstract]:As with the resistance R inductance L and capacitance C are the fourth basic electronic components, the memristor can establish the relationship between the magnetic flux and charge, its value depends on the current of history, so the memristor has a memory function. Since the successful implementation of HP laboratory physical memristor to its non easy nonvolatile memory, computer, field of artificial neural network and the circuit design of the potential application value has aroused wide attention of scholars at home and abroad.
Because of nanotechnology there is difficult to implement, high cost of memristor now exists only in the environment of laboratory. The memristor is impossible in a short period of time have become the bottleneck of commercialization, people drag device and its application, and according to the electrical characteristics of the actual circuit and system of the memristor construct its equivalent circuit analysis and study the memristor which has important significance and practical value. In addition, as a nonlinear dynamic element of nanometer size, the chaotic signal is very suitable for the implementation of memristor chaotic circuit to generate high frequency. Mainly used in the simulation of equivalent memristor and electrical characteristics of memristor in chaotic systems research work of this paper, the research achievements are as follows:
(1) to HP memristor model as the foundation, proposed a charge controlled memristor simulator, through Pspice simulation analysis, the electrical characteristics of the electrical characteristics of the simulator and the HP memristor is consistent, and the circuit structure is simple, the devices used are ordinary devices, very suitable for analysis and study the memristor under the experimental environment. Because the memory effect is a common phenomenon in nano devices, nano size capacitance, inductance also has the characteristics of memory, in order to electrical behavior can simulate all memory devices, we implemented a general memory device simulator. The simulator can in circuit topology unchanged the case can be grounded memristor into floating memristor memcapacitor, floating and floating meminductor device has good versatility.
(2) proposed a memristor chaotic circuit system design method, consider memristor based chaotic circuit by sinusoidal oscillator network, RC phase network and the memristor is composed of three parts, when choosing different sine wave oscillator can be memristor chaotic circuit are different, the two order RC bridge oscillator and three double order T bandreject oscillator to validate the design method as an example.
(3) the memristor chaotic circuit can produce chaotic signal, cannot achieve hyperchaotic behavior based on piecewise linear magnetron memristor realized a hyperchaotic circuit nonlinear resistor in MCK circuit. The stability of equilibrium point replacement analysis, Lyapunov exponent spectrum, bifurcation diagram and phase diagram and other routine analysis of the dynamic behavior of the system, and the correctness of the theory is verified by Pspice simulation.
(4) in addition, the memristor implements an improved cellular neural network unit, the appropriate unit connecting three cells can be memristor chaotic system model is mapped to the cellular neural network circuit, thus also an alternative method for the design of memristor based chaotic circuit with dynamic. Experimental study on the behavior of the circuit, we use cellular neural unit to realize a new memristor emulator. The consistency of experimental results and numerical simulation results show that using cellular neural network can effectively realize the memristor based chaotic circuit.
(5) in order to study synchronization of memristor chaotic system, to put forward the memristor chaotic system as the research object using adaptive synchronization scheme to realize the system with uncertain parameters under simultaneous two identical structure of memristor chaotic system. And based on adaptive synchronization, we use parameter modulation technology construction of a chaotic secure communication system, and the feasibility of this system is verified by numerical simulation.

【学位授予单位】：湘潭大学
【学位级别】：博士
【学位授予年份】：2014
【分类号】：TM13

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