中高压大功率IGBT驱动保护电路及应用研究

发布时间：2018-02-15 12:58

本文关键词： IGBT 驱动保护整晶圆IGBT 双向功率模块　出处：《湖南大学》2014年硕士论文　论文类型：学位论文

【摘要】：目前，以IGBT为核心的变换器在工业电机驱动、新能源发电、电力传输、电能变换、电能质量控制和无功补偿等领域广泛应用，在中等及大功率应用中逐渐占据主导地位。驱动和保护电路的性能直接影响着IGBT的性能和变换器系统的安全稳定运行。本文在详细分析了IGBT的工作原理基础上，对中高压大功率IGBT的驱动保护电路的常用技术进行了分析、比较和总结；针对驱动峰值电流不够、驱动功率不足的问题，分析了常规方法即驱动器外加推挽放大电路和隔离电源的优缺点和适用范围之后，提出了驱动器双通道并联的驱动设计方案，来提供双倍的驱动功率和驱动峰值电流，增加驱动能力，并通过Pspice仿真和实验验证该思路的正确性；采用驱动器双通道并联设计了一种正在开发的3300V/3000A整晶圆特大容量IGBT驱动电路，还设计了dv/dt、过压、短路保护电路，避免整晶圆特大容量IGBT失效；同时对矩阵变换器系统中双向功率模块的驱动和保护电路进行分析、总结和设计。主要工作如下：首先，介绍了IGBT的结构、模型、静态特性，结合理论公式详细的分析了开关过程中驱动参数对IGBT开关特性的影响；通过对安全工作区的进一步认识，分析了IGBT的失效机理。其次，在深入研究IGBT门极驱动基本要求的基础上，对驱动电路各部分的基本原理、常用的设计方法进行了分析、比较和总结；针对中高压大功率IGBT驱动的特殊要求，通过比较研究提出了采用2SC0535双通道并联驱动方案来设计整晶圆特大容量高压IGBT驱动电路，，仿真和实验结果验证了设计方法的正确性。再次，详细的分析了中高压大功率IGBT保护电路的设计要求，总结了dv/dt、过压、过流保护电路常用设计方法的优缺点、适用范围；在此基础上设计了一种较为完整的整晶圆特大容量高压IGBT保护电路，测试实验结果验证了设计方案的合理性。最后，对基于IGBT的矩阵变换器双向功率模块进行了分类，在总结各自特点及其驱动保护电路的设计难点的基础上，针对RB-IGBT反并联组合形式的双向开关，在采用常规的高压快速恢复二极管检测短路电流时，出现反向高压短路烧毁保护电路的问题，提出了采用多个电阻串联限流的短路保护检测设计方法。
[Abstract]:At present, converters based on IGBT are widely used in the fields of industrial motor drive, new energy generation, power transmission, power conversion, power quality control and reactive power compensation. The performance of drive and protection circuits has a direct impact on the performance of IGBT and the safe and stable operation of converter system. Based on the detailed analysis of the working principle of IGBT, this paper analyzes, compares and summarizes the common techniques of the drive protection circuit of the medium-high voltage and high-power IGBT, aiming at the problem of insufficient driving peak current and insufficient driving power. After analyzing the advantages and disadvantages and the applicable range of conventional methods, that is, the driver external push-pull amplifier circuit and the isolation power supply, a parallel drive scheme of the driver with two channels is proposed to provide double driving power and driving peak current. The drive ability is increased, and the correctness of the idea is verified by Pspice simulation and experiment. A 3300V / 3000A wafer IGBT drive circuit is designed in parallel with the driver, and a DVD / DT, overvoltage and short-circuit protection circuit is also designed. At the same time, the drive and protection circuits of bidirectional power modules in matrix converter system are analyzed, summarized and designed. The main work is as follows:. Firstly, the structure, model and static characteristics of IGBT are introduced, and the influence of the driving parameters on the switching characteristics of IGBT is analyzed in detail with the theoretical formula, and the failure mechanism of IGBT is analyzed through the further understanding of the safe working area. Secondly, on the basis of deeply studying the basic requirements of IGBT gate drive, the basic principle and common design methods of each driving circuit are analyzed, compared and summarized. In this paper, a 2SC0535 dual-channel parallel drive scheme is proposed to design the high-voltage IGBT drive circuit with large wafer capacity. The simulation and experimental results verify the correctness of the design method. Thirdly, the design requirements of IGBT protection circuit are analyzed in detail, and the advantages and disadvantages and applicable range of the common design methods of DVD / DT, over voltage and over current protection circuit are summarized. On this basis, a relatively complete high voltage IGBT protection circuit with large wafer capacity is designed, and the rationality of the design is verified by the test results. Finally, the bidirectional power modules of matrix converter based on IGBT are classified. On the basis of summarizing the characteristics of each module and the design difficulties of the drive and protection circuit, the bi-directional switch in the form of anti-parallel combination of RB-IGBT is proposed. When the conventional high voltage fast recovery diode is used to detect the short circuit current, the problem of the reverse high voltage short circuit burning protection circuit appears. A design method of short circuit protection detection using multiple resistors in series current limiting is proposed.
【学位授予单位】：湖南大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM46

【参考文献】