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混沌SPWM控制AC-DC变换器IGBT的损耗计算方法及温升研究

发布时间:2018-03-11 07:02

  本文选题:混沌SPWM 切入点:IGBT 出处:《北京交通大学》2014年硕士论文 论文类型:学位论文


【摘要】:摘要:混沌SPWM被提出并逐渐应用于抑制功率变换器中的电磁干扰,这种控制方法能有效降低EMI峰值,且实现简单,目前受到了人们越来越广泛的关注。但是目前这种控制方法下开关器件的功率损耗和温升问题还未被关注和分析。而随着电力电子技术的飞速发展,半导体开关器件功率等级的不断提升,器件工作时的结温也不断升高。结温过高会影响开关器件的工作性能和使用寿命,温升问题已经成为了功率开关器件产生故障的主要原因。因此分析混沌控制下功率变换器中开关器件的损耗和温升对于混沌正弦脉宽调制这种方法的优化和推广有着很重要的意义。 本文首先介绍了基于混沌SPWM控制AC-DC变换器的工作原理及控制策略,分析了Logistic和Tent两种常用混沌映射的特性,并基于控制原理比较了混沌SPWM控制与常规SPWM控制,最后选用TMS320F28335为变换器控制核心芯片,在CCS3.3平台下编写了混沌SPWM的控制程序。 同时,本文针对已有的变频混沌SPWM控制中载波频率混沌波动的特点和变幅值混沌SPWM控制中载波幅值混沌波动的特点,利用离散迭代的方式,首次分别提出了两种混沌SPWM控制下AC-DC变换器中IGBT的损耗计算方法,从理论和计算上对常规SPWM控制和混沌SPWM控制下的IGBT损耗进行了对比分析。 为了分析本文提出的损耗计算方法的精确性,本文选用ANSYS进行热仿真分析,利用Solidworks建立3D模型并导入ANSYS,提高了仿真的精确性。同时为了准确的分析不同控制方法下IGBT温升的对比,本文选用Saber-Simulink联合电热仿真,在Simulink中搭建混沌SPWM控制和常规SPWM控制模块,在Saber中搭建热模块并进行了不同控制下IGBT的温升仿真对比。 最后搭建了单相AC-DC变换器实验平台,并设计了单片机测温显示系统,测量了不同控制方法下IGBT的温升并绘制曲线。温升实验配合热仿真验证了前文提出的损耗计算方法的精确性,并验证了混沌SPWM与常规SPWM控制下IGBT损耗差异对比及仿真研究的正确性。
[Abstract]:Absrtact: chaotic SPWM is proposed and gradually applied to suppress electromagnetic interference in power converter. This control method can effectively reduce the peak value of EMI and is easy to implement. At present, more and more attention has been paid to the power loss and temperature rise of switching devices under this control method. However, with the rapid development of power electronics technology, the power loss and temperature rise of switching devices have not been paid attention to and analyzed. With the increasing of the power level of semiconductor switch devices, the junction temperature of the devices is also rising. The high junction temperature will affect the working performance and service life of the switch devices. The problem of temperature rise has become the main cause of failure of power switch devices. Therefore, the optimization and extension of the method of switching device loss and temperature rise for chaotic sinusoidal pulse width modulation under chaos control are analyzed. Have very important meaning. This paper first introduces the working principle and control strategy of AC-DC converter based on chaotic SPWM, analyzes the characteristics of two common chaotic maps, Logistic and Tent, and compares the chaotic SPWM control with the conventional SPWM control based on the control principle. Finally, TMS320F28335 is chosen as the core chip of converter control, and the control program of chaotic SPWM is written on CCS3.3 platform. At the same time, according to the characteristics of the carrier frequency chaos fluctuation in the frequency conversion chaotic SPWM control and the carrier amplitude chaos fluctuation in the variable amplitude chaotic SPWM control, the discrete iteration method is used in this paper. For the first time, two methods for calculating the loss of IGBT in AC-DC converters under chaotic SPWM control are proposed for the first time, and the IGBT losses under conventional SPWM control and chaotic SPWM control are compared and analyzed theoretically and numerically. In order to analyze the accuracy of the loss calculation method proposed in this paper, ANSYS is selected for thermal simulation analysis. Using Solidworks to build 3D model and import ANSYSto improve the accuracy of simulation. In order to accurately analyze the comparison of IGBT temperature rise under different control methods, this paper chooses Saber-Simulink combined with electrothermal simulation to build chaotic SPWM control module and conventional SPWM control module in Simulink. The thermal module is built in Saber and the temperature rise of IGBT under different control is compared. Finally, a single-phase AC-DC converter experimental platform is built, and a single-chip microcomputer temperature measurement and display system is designed. The temperature rise of IGBT under different control methods was measured and the curves were drawn. The accuracy of the loss calculation method proposed in the previous paper was verified by the temperature rise experiment and thermal simulation. The comparison between chaotic SPWM and IGBT loss under conventional SPWM control and the correctness of simulation are verified.
【学位授予单位】:北京交通大学
【学位级别】:硕士
【学位授予年份】:2014
【分类号】:TM46

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