过渡族金属半导体化合物在新型高效太阳能电池中的应用

发布时间：2018-03-13 21:19

本文选题：有机-无机杂化太阳能电池　切入点：层状材料硫化钴　出处：《苏州大学》2015年硕士论文　论文类型：学位论文

【摘要】：本论文主要研究了过渡金属半导体化合物在新型有机-硅及相关太阳能电池的制备与性能表征。具体分为两个部分,一是基于硅与共轭导电聚合物聚3,4二氧乙烯噻吩:聚苯乙烯磺酸(PEDOT:PSS)的高效有机-无机杂化太阳能电池的制备及性能研究;二是基于体异质结结构的(3-己基噻吩(P3HT):富勒烯的衍生物(PC61BM)和聚苯并二噻吩(PTB7):富勒烯的衍生物(PC71BM)的有机太阳能电池的制备及性能研究。主要工作包括以下几个方面:1.以平面硅为基底,通过溶液旋涂法制备有机导电薄膜PEDOT:PSS,形成Si/PEDOT:PSS肖特基结的有机-无机杂化太阳能电池。将通过水热法合成的层状材料硫化钴掺入PEDOT:PSS中。在PEDOT:PSS薄膜中分散均匀的硫化钴可以有效地提高薄膜的导电率和功函数。从而有效减少在有机导电薄膜和硅之间的电子空穴复合,提高空穴的传输效率。通过加入层状硫化钴,可以将光电转换效率从9.46%提高到11.22%。2.通过金属离子辅助溶液刻蚀技术制备双面硅纳米线阵列,并使用四甲基氢氧化铵修饰硅纳米线阵列。将得到的具有硅纳米阵列的硅片制成Si/PEDOT:PSS结构的有机-无机杂化太阳能电池,并在硅片与背电极间引入由纳米氧化锌颗粒制成的空穴阻挡层。通过这种方法使得有机-无机杂化太阳能电池的效率提高到12.52%。效率的提升归功于硅纳米结构对光吸收的增加,背电极接触的改善以及空穴阻挡层对背面电荷复合的抑制。3.分别制备以P3HT:PCBM和PTB7:PCBM为活性层的有机太阳能电池,将水热法合成的层状材料硫化钴掺入活性层中,使得活性层的微观结构得到改善,有机材料的结晶性得到提高。通过GIXRD测试可以证实层状材料硫化钴掺入活性层后有增强有机材料结晶性的作用。通过这种办法使得活性层的载流子迁移率得到提高,从而分别将有机太阳能电池的效率提高到4.46%(P3HT:PCBM体系)和9.28%(PTB7:PCBM体系)。
[Abstract]:In this paper, the preparation and characterization of transition metal semiconductor compounds in novel organo-silicon and related solar cells were studied. The first is the preparation and performance study of high efficiency organic-inorganic hybrid solar cells based on silicon and conjugated conductive polymer poly (3o 4 dioxyethylene thiophene: polystyrene sulfonic acid) PEDOT: PSS. The second is the preparation and performance study of organic solar cells based on the bulk heterojunction structure of hexylthiophene P3HT: fullerene derivative PC61BM) and polybenzodithiophene PTB7: fullerene derivative PC71BM. the main work includes the following aspects. Based on planar silicon, Organic conductive thin film PEDOT: PSS was prepared by solution spin-coating method to form organic-inorganic hybrid solar cells with Si/PEDOT:PSS Schottky junction. Cobalt sulfide, a layered material synthesized by hydrothermal method, was doped into PEDOT:PSS. It was dispersed uniformly in PEDOT:PSS thin film. Cobalt can effectively improve the conductivity and work function of the film, thus effectively reducing the electron hole recombination between organic conductive film and silicon. The photoelectric conversion efficiency can be increased from 9.46% to 11.22 by adding layered cobalt sulfide. The double-sided silicon nanowire arrays are prepared by metal-ion assisted solution etching. Using tetramethylammonium hydroxide to modify silicon nanowire array, the organic inorganic hybrid solar cells with Si/PEDOT:PSS structure were prepared by using silicon wafer with silicon nanowire array. A hole barrier layer made of nano-zinc oxide particles was introduced between the silicon wafer and the back electrode. By this method, the efficiency of the organic-inorganic hybrid solar cells was increased to 12.52. The increase of the efficiency was attributed to the increase in the absorption of light by the silicon nanostructures. The improvement of back electrode contact and the inhibition of hole barrier layer on the back charge compound. 3. Organic solar cells with P3HT: PCBM and PTB7:PCBM as active layer were prepared, and the layered material cobalt sulfide was doped into the active layer by hydrothermal method. To improve the microstructure of the active layer, The crystallinity of the organic material was improved. The results of GIXRD test showed that cobalt sulfide doped in the active layer could enhance the crystallinity of the organic material. By this method, the carrier mobility of the active layer was improved. Thus, the efficiency of organic solar cells was increased to 4.46% P3HT: PCBM system and 9.28% PTB 7: PCBM system respectively.
【学位授予单位】：苏州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TM914.4

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