忆感等效电路的特性分析与实验验证

发布时间：2018-05-05 15:53

本文选题：等效电路 + 实验　；参考：《电子科技大学学报》2014年06期

【摘要】：忆感器是从忆阻器概念推演出来的一个新的具有记忆功能的非线性电路元件。基于忆感近似等效电路模型,采用一个有源磁控忆阻器实现等效电路中的忆阻器,建立了忆感近似等效电路的状态方程组;借助MATLAB数学工具软件,进行了等效忆感器特性的数值仿真分析。结果表明,等效忆感器的韦安关系呈现典型的紧磁滞回线特性,且依赖于外加电压激励频率。通过有源磁控忆阻器的等效电路进行了忆感近似等效电路的实验验证,实验测量结果和数值仿真结果基本一致,说明了忆感近似等效电路模型的正确性。
[Abstract]:Memory sensor is a new nonlinear circuit element with memory function derived from the concept of memory resistor. Based on the amnesia approximate equivalent circuit model, an active magnetically controlled amnesia is used to realize the state equations of the equivalent circuit, and the state equations of the equivalent circuit are established by the aid of the MATLAB mathematical tool software. Numerical simulation analysis of the characteristics of the equivalent memory sensor is carried out. The results show that the Weir relation of the equivalent amnesia is characterized by a typical tight hysteresis loop and depends on the applied voltage excitation frequency. The experimental verification of the equivalent circuit of the active magnetically controlled resistor is carried out. The experimental results are in good agreement with the numerical simulation results, and the correctness of the equivalent circuit model is proved.
【作者单位】：中国电信江苏公司云计算中心;常州大学信息科学与工程学院;
【基金】：国家自然科学基金(51277017) 江苏省自然科学基金(BK2012583)
【分类号】：TM54

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