AZO薄膜的制备及其在硅基薄膜太阳电池中的应用

发布时间：2018-05-15 13:40

本文选题：AZO薄膜 + 射频磁控溅射　；参考：《北京交通大学》2014年硕士论文

【摘要】：透明导电氧化物薄膜是薄膜太阳电池中的一个重要结构,因具有良好的光电性能而被广泛地应用在薄膜太阳电池的前电极和背电极。高质量的透明导电氧化物薄膜是进一步提高太阳电池效率的关键所在。 AZO(掺铝氧化锌)是近些年来研究较多的新型透明导电材料,具有成本低廉、资源丰富、无污染的优势,并且具有优良的光电特性,因此广泛应用在薄膜太阳电池中,被认为是最具发展潜力的材料之一。本文采用射频磁控溅射法在玻璃衬底上制备了AZO透明导电膜,研究了氩气压强、氩气流量、衬底与靶材之间的距离对AZO透明导电膜光电性能的影响,优化了制备AZO薄膜的工艺参数。为了进一步降低薄膜的电阻率,我们采取了在氩气氛围中通入H2的方法对AZO薄膜进行氢化处理。氢化处理后的AZO薄膜在厚度为230nm的情况下,薄膜的方块电阻为40.8Ω/(?),是相同条件下未氢化薄膜方块电阻的1/6,可见光的平均透过率在87%以上。结果表明,对AZO薄膜的氢化处理能够有效地提高薄膜的电学性能。将优化后的AZO透明导电膜应用在非晶硅锗太阳电池的背反射电极,结果表明在500-900nm波段,太阳电池的QE曲线显著增加,电流密度由原来的12.1mA/cm2增加到了14.9mA/cm2,电池效率提高了1%。此外,在石英片和硅片上制备了石墨烯薄膜,制备的薄膜分布均匀,生长较好。然后采用相同的方法在AZO薄膜表面生长了石墨烯薄膜,经原子力显微镜表征发现,生长了石墨烯的AZO薄膜表面变得粗糙。对其光电性能进行测试,发现方块电阻变大,其平均透过率与AZO薄膜相比相差不大。最后,在柔性衬底聚酰亚胺上,通过射频磁控溅射的方法生长了AZO透明导电膜。结果发现,该薄膜在厚度为610nm时,方块电阻仅为16.7Ω/(?)。在聚酰亚胺衬底上生长的AZO薄膜的平均透过率在89%以上。
[Abstract]:Transparent conductive oxide film is an important structure in thin film solar cells. Because of its good photoelectric properties, it is widely used in the front and back electrodes of the thin film solar cells. The high quality transparent conductive oxide film is the key to further improve the efficiency of the solar cell.
AZO (aluminum doped Zinc Oxide) is a new type of transparent conductive material which has been widely studied in recent years. It has the advantages of low cost, rich resources and no pollution, and has excellent photoelectric characteristics. Therefore, it is widely used in thin film solar cells and is considered to be one of the most promising materials.
The AZO transparent conductive film was prepared on the glass substrate by RF magnetron sputtering. The effect of argon gas pressure, argon flow rate, the distance between the substrate and target on the photoelectric properties of the AZO transparent conductive film was studied. The technological parameters of the preparation of the AZO film were optimized. In order to further reduce the resistivity of the film, we adopted the argon atmosphere. The AZO film is hydrogenated by H2, and the AZO film after hydrogenation is 40.8 OMEGA / (?) under the thickness of 230nm. It is the 1/6 of the resistance of the non hydrogenated film under the same condition, and the average transmittance of the visible light is above 87%. The results show that the hydrogenated treatment of the AZO film can effectively improve the thinning of the thin film. The electrical properties of the membrane.
The optimized AZO transparent conductive film was applied to the back reflection electrode of the amorphous silicon germanium solar cell. The results showed that the QE curve of the solar cell increased significantly in the 500-900nm band, the current density increased from the original 12.1mA/cm2 to the 14.9mA/cm2, and the cell efficiency increased by 1%..
In addition, graphene thin films are prepared on quartz and silicon wafers. The thin films are evenly distributed and grow better. Then the graphene film is grown on the surface of AZO film by the same method. The surface of the AZO thin film has become rough by atomic force microscopy. The photoelectric properties of the graphene film are tested and the block resistance is detected. The average transmittance increases with the AZO film.
Finally, the AZO transparent conductive film was grown on the flexible substrate Polyimide by RF magnetron sputtering. The results showed that the resistance of the film was only 16.7 OMEGA / (?) when the thickness was 610nm. The average transmittance of the AZO film on the polyimide substrate was 89%.

【学位授予单位】：北京交通大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM914.42

【共引文献】