CIGS和ZnO薄膜结构及性能研究

发布时间：2018-06-03 09:42

  本文选题：CIGS薄膜 + 磁控溅射法　； 参考：《哈尔滨工业大学》2015年硕士论文

【摘要】：铜铟镓硒薄膜太阳能电池具有高转换效率、稳定性高、禁带宽度可调等优点,一直备受关注,CIGS电池结构复杂,分为背电极、吸收层、缓冲层、窗口层和减反层等多层,每层的薄膜质量,直接影响CIGS电池的光电转换效率、稳定性等电池性能,CIGS层作为CIGS薄膜太阳能电池的P型层,制备时,衬底的温度对薄膜的质量有较大的影响;i-Zn O带隙3.3e V,是作为CIGS薄膜太阳能电池的的N型的理想材料;AZO薄膜与i-Zn O晶格匹配,作为透明电极。因此,进一步研究薄膜的制备工艺和薄膜制备的新方法具有重大意义。本文主要对CIGS电池结构中的吸收层(CIGS薄膜)和窗口层(i-Zn O和AZO薄膜)进行探究,其主要研究内容分为两部分:(1)用四元合金靶材制备CIGS薄膜,主要研究了常温生长CIGS薄膜后再后续退火、高温生长CIGS薄膜后再后续退火、直接高温生长CIGS薄膜这三个工艺过程对CIGS薄膜的影响;通过XRD、SEM等表征手段发现,直接高温生长得到的CIGS薄膜的结晶性和微观形貌更为理想;对比不同直接高温生长的CIGS薄膜,随温度升高,结晶性和载流子浓度均呈现先增加后降低的趋势,在工作压强为1Pa,溅射功率为120W,衬底温度为500℃时,制备的薄膜晶粒尺寸大、表面平整、载流子浓度高、光响应最好。(2)利用磁控溅射法和溶胶-凝胶法制备了i-Zn O和AZO薄膜,用磁控溅射法制备的i-Zn O薄膜,透过率均超过80%,随溅射气压增加,晶粒变大,带隙宽度增大;随溅射功率的增加,晶粒也变大,但带隙宽度减小。对溶胶-凝胶法,旋涂次数为11次时结晶性最好;旋涂次数小于7次时,i-Zn O薄膜的透过率超过80%。与磁控溅射法相比,溶胶-凝胶法制备的i-Zn O薄膜较差,透射率差,光学吸收边向长波方向移动。对磁控溅射制备的AZO薄膜,随溅射气压的增加电阻率先降低后增加,在0.7Pa时,电阻率最低;随溅射功率的增加,电阻率也是先降低后增加,在200W时,电阻率最低。随铝掺杂量的增加,电阻率先降低后增加,当掺杂浓度为5%时,薄膜的电阻率最低;随旋涂次数的增加,电阻率降低。
[Abstract]:Copper indium gallium selenium thin film solar cells have many advantages, such as high conversion efficiency, high stability, adjustable band gap and so on. The structure of CIGS cells is very complex, which can be divided into four layers: back electrode, absorption layer, buffer layer, window layer and antireflection layer. The film quality of each layer directly affects the photovoltaic conversion efficiency and stability of the CIGS cell. The CIGS layer is used as the P-type layer of the CIGS thin film solar cell. The substrate temperature has a great influence on the quality of the thin films. It is an ideal N-type material for CIGS thin film solar cells, which matches the lattice of i-Zn O and acts as a transparent electrode. Therefore, it is of great significance to further study the preparation process and the new method of thin film preparation. In this paper, the absorption layer of CIGS cell structure, the absorption layer of CIGS) and the window layer of i-Zn O and AZO thin films are studied. The main contents of this study are divided into two parts: 1) Quaternary alloy target is used to prepare CIGS thin films. In this paper, the effects of the three processes on the growth of CIGS films at room temperature and CIGS films at high temperature, and the direct growth of CIGS films at high temperature have been studied. The crystallinity and micromorphology of the CIGS films grown at high temperature were more ideal, and compared with the CIGS films grown at different direct high temperatures, the crystallinity and carrier concentration increased first and then decreased with the increase of temperature. When the working pressure is 1 Pa, the sputtering power is 120 W, the substrate temperature is 500 鈩，

本文编号：1972330